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NCEP15T11T-VB Product details
Back to previous pageProduct introduction：
1. NCEP15T11T-VB Product Introduction
NCEP15T11T-VB is a high-performance N-channel power MOSFET in a **TO-247** package, designed for high current and medium voltage applications. Its rated **150V** drain-source voltage (VDS) and ±20V gate-source voltage (VGS) make it suitable for a variety of power and switching applications. The device uses **Trench technology** and has a low on-resistance (RDS(ON)) of **12mΩ**, providing excellent power efficiency and heat dissipation performance, and is particularly suitable for use in environments with high power and high reliability requirements.
NCEP15T11T-VB is a high-performance N-channel power MOSFET in a **TO-247** package, designed for high current and medium voltage applications. Its rated **150V** drain-source voltage (VDS) and ±20V gate-source voltage (VGS) make it suitable for a variety of power and switching applications. The device uses **Trench technology** and has a low on-resistance (RDS(ON)) of **12mΩ**, providing excellent power efficiency and heat dissipation performance, and is particularly suitable for use in environments with high power and high reliability requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-247 | Provides excellent heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET, widely used in switching and amplification circuits|
| **Drain-source voltage (VDS)** | 150V | Suitable for medium voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±20V | Wide range of gate drive voltage, suitable for a variety of control circuits|
| **Threshold voltage (Vth)** | 3V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 12 mΩ @ VGS=10V | Low on-resistance, reduced power consumption, improved efficiency|
| **Maximum drain current (ID)** | 150A | Suitable for applications with medium to high current requirements |
| **Technology** | Trench | Using trench technology to provide lower on-resistance and higher switching speed |
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-247 | Provides excellent heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET, widely used in switching and amplification circuits|
| **Drain-source voltage (VDS)** | 150V | Suitable for medium voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±20V | Wide range of gate drive voltage, suitable for a variety of control circuits|
| **Threshold voltage (Vth)** | 3V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 12 mΩ @ VGS=10V | Low on-resistance, reduced power consumption, improved efficiency|
| **Maximum drain current (ID)** | 150A | Suitable for applications with medium to high current requirements |
| **Technology** | Trench | Using trench technology to provide lower on-resistance and higher switching speed |
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power converter**
NCEP15T11T-VB is widely used in **high-efficiency switching power supply** design. Its low on-resistance and high current capability enable it to significantly improve the power conversion efficiency and is suitable for various industrial power supplies and power modules.
2. **Electric vehicle drive system**
This MOSFET is very suitable for **electric vehicle motor drive**, and can provide stable current output under high load conditions, meet the high efficiency of the motor during acceleration and braking, and improve the power performance of the whole vehicle.
3. **Motor control system**
In **motor control and drive system**, NCEP15T11T-VB can be used as a driving device to help adjust the start and stop and speed of the motor. It is suitable for fields such as industrial automation and robotics, providing reliable control performance.
4. **High-power LED driver**
This device is also suitable for **high-power LED driver circuit**. Through its low on-resistance, it can stably drive LEDs, meet the precise current control requirements of lighting equipment, and improve energy efficiency.
Through the above application examples, NCEP15T11T-VB demonstrates its excellent performance in the high current and medium voltage fields, which can meet the needs of a variety of industrial and consumer electronic devices for efficient and reliable power switches.
1. **High-efficiency power converter**
NCEP15T11T-VB is widely used in **high-efficiency switching power supply** design. Its low on-resistance and high current capability enable it to significantly improve the power conversion efficiency and is suitable for various industrial power supplies and power modules.
2. **Electric vehicle drive system**
This MOSFET is very suitable for **electric vehicle motor drive**, and can provide stable current output under high load conditions, meet the high efficiency of the motor during acceleration and braking, and improve the power performance of the whole vehicle.
3. **Motor control system**
In **motor control and drive system**, NCEP15T11T-VB can be used as a driving device to help adjust the start and stop and speed of the motor. It is suitable for fields such as industrial automation and robotics, providing reliable control performance.
4. **High-power LED driver**
This device is also suitable for **high-power LED driver circuit**. Through its low on-resistance, it can stably drive LEDs, meet the precise current control requirements of lighting equipment, and improve energy efficiency.
Through the above application examples, NCEP15T11T-VB demonstrates its excellent performance in the high current and medium voltage fields, which can meet the needs of a variety of industrial and consumer electronic devices for efficient and reliable power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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