Product introduction：
NCEP12T13A-VB Product Introduction
NCEP12T13A-VB is a high-efficiency N-channel MOSFET in TO220 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 100V, suitable for use in a variety of harsh power management and control environments. The maximum gate-source voltage (VGS) of the device is ±20V, ensuring that it can operate within a safe range. The threshold voltage (Vth) is 3V, which enables it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of NCEP12T13A-VB is 5mΩ at VGS = 10V, which greatly reduces conduction losses and improves overall energy efficiency. The maximum drain current (ID) of the device is 120A, making it very suitable for applications that handle high power. Based on **Trench** technology, this MOSFET provides excellent performance, ensuring stability and reliability under various operating conditions.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Product model**: NCEP12T13A-VB
- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
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Domain and module applications：
Application fields and module examples
The high performance characteristics of NCEP12T13A-VB MOSFET make it widely used in many fields and modules. The following are specific examples:
1. **Switching power supply**
- This MOSFET is very suitable for **DC-DC converter**, which can perform voltage conversion under high-efficiency conditions to meet the power supply needs of various electronic devices.
2. **Electric vehicle power management**
- In the power management system of **electric vehicles**, NCEP12T13A-VB can be used to control high-current battery charging and discharging to ensure efficient operation and safety of the system.
3. **Motor drive control**
- This MOSFET performs well in **motor drive** applications, which can control the starting and speed regulation of high-power motors to meet the needs of industrial automation and robotics.
4. **Power Electronics Devices**
- In power electronics devices such as **solar inverters**, NCEP12T13A-VB can effectively convert DC to AC, providing a reliable solution for renewable energy applications.
5. **High-frequency switching power supply design**
- This MOSFET is suitable for **high-frequency switching power supplies**, which can support fast switching operations, reduce power losses, improve system efficiency, and adapt to the high requirements of modern electronic products for energy efficiency.
Through the above application examples, NCEP12T13A-VB shows its wide applicability in high-power and high-voltage applications, providing an effective solution for power management and signal processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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