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NCEP01T30T-VB Product details
Back to previous pageProduct introduction：
1. NCEP01T30T-VB Product Introduction
NCEP01T30T-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-power and high-efficiency power management applications. The device has a high maximum drain-source voltage (VDS) of 100V, which can provide excellent performance in a variety of power electronics applications. Its threshold voltage (Vth) is 3V, ensuring fast turn-on at a low gate drive voltage. The on-resistance (RDS(ON)) of NCEP01T30T-VB is only 2mΩ at a gate voltage of 10V, which greatly reduces its power consumption in the switching and on states. The maximum continuous drain current (ID) can reach 320A, which is suitable for high-current and high-efficiency application scenarios such as switching power supplies, inverters and motor control.
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NCEP01T30T-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-power and high-efficiency power management applications. The device has a high maximum drain-source voltage (VDS) of 100V, which can provide excellent performance in a variety of power electronics applications. Its threshold voltage (Vth) is 3V, ensuring fast turn-on at a low gate drive voltage. The on-resistance (RDS(ON)) of NCEP01T30T-VB is only 2mΩ at a gate voltage of 10V, which greatly reduces its power consumption in the switching and on states. The maximum continuous drain current (ID) can reach 320A, which is suitable for high-current and high-efficiency application scenarios such as switching power supplies, inverters and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. NCEP01T30T-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|--------------------------------------------|
| **Package Type** | TO247 | Compact package suitable for high power applications. |
| **Configuration** | Single N-channel | Common configuration suitable for various switching and power management applications. |
| **Drain-Source Voltage (VDS)** | 100V | Able to handle high voltages, suitable for a variety of power electronics applications. |
| **Gate Drive Voltage (VGS)** | ±20V | Provides a flexible control range to meet a variety of drive requirements. |
| **Threshold Voltage (Vth)** | 3V | Ensures stability of conduction at the appropriate voltage. |
| **On-Resistance (RDS(ON))** | 2mΩ @ VGS=10V | Extremely low on-resistance, effectively reducing conduction losses. |
| **Maximum Drain Current (ID)** | 320A | Suitable for medium to high power applications, able to meet high current requirements. |
| **Technology** | Trench | Improves device performance, reduces switching losses and on-resistance. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|--------------------------------------------|
| **Package Type** | TO247 | Compact package suitable for high power applications. |
| **Configuration** | Single N-channel | Common configuration suitable for various switching and power management applications. |
| **Drain-Source Voltage (VDS)** | 100V | Able to handle high voltages, suitable for a variety of power electronics applications. |
| **Gate Drive Voltage (VGS)** | ±20V | Provides a flexible control range to meet a variety of drive requirements. |
| **Threshold Voltage (Vth)** | 3V | Ensures stability of conduction at the appropriate voltage. |
| **On-Resistance (RDS(ON))** | 2mΩ @ VGS=10V | Extremely low on-resistance, effectively reducing conduction losses. |
| **Maximum Drain Current (ID)** | 320A | Suitable for medium to high power applications, able to meet high current requirements. |
| **Technology** | Trench | Improves device performance, reduces switching losses and on-resistance. |
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Domain and module applications：
III. Applications and module examples
1. **Switching Power Supply (SMPS)**
NCEP01T30T-VB is widely used in switching power supplies to achieve efficient voltage conversion and stable output current. Its extremely low on-resistance and high current capability enable the device to significantly reduce power consumption and improve the efficiency of the entire system, making it particularly suitable for power management of various electronic devices.
2. **Inverter**
This MOSFET is ideal for inverter applications, converting DC power to AC power and providing efficient and stable output. Its low on-resistance ensures excellent performance in high-power demand applications and is widely used in solar inverters, electric vehicle chargers, and other renewable energy systems.
3. **Motor Control**
NCEP01T30T-VB can be used in motor drive applications such as DC motor and stepper motor control. With its high current carrying capacity and low conduction loss, the device can meet the needs for fast response and efficient control in products such as power tools and home appliances.
4. **Battery Management System (BMS)**
In the battery management system, NCEP01T30T-VB can be used to efficiently control the charging and discharging process of the battery, ensuring the safe and efficient operation of the battery. Its high current carrying capacity makes it excellent in electric vehicles and energy storage systems.
5. **High-frequency switching power supply**
Due to its fast switching speed and low on-resistance, NCEP01T30T-VB is suitable for high-frequency switching power supply, which can achieve efficient energy conversion. It is widely used in computer power supply, communication equipment and other fields that require efficient power management.
In summary, NCEP01T30T-VB is a high-performance and high-efficiency MOSFET suitable for a variety of power electronic equipment, which can meet the requirements of modern electronic products for efficiency and power density.
1. **Switching Power Supply (SMPS)**
NCEP01T30T-VB is widely used in switching power supplies to achieve efficient voltage conversion and stable output current. Its extremely low on-resistance and high current capability enable the device to significantly reduce power consumption and improve the efficiency of the entire system, making it particularly suitable for power management of various electronic devices.
2. **Inverter**
This MOSFET is ideal for inverter applications, converting DC power to AC power and providing efficient and stable output. Its low on-resistance ensures excellent performance in high-power demand applications and is widely used in solar inverters, electric vehicle chargers, and other renewable energy systems.
3. **Motor Control**
NCEP01T30T-VB can be used in motor drive applications such as DC motor and stepper motor control. With its high current carrying capacity and low conduction loss, the device can meet the needs for fast response and efficient control in products such as power tools and home appliances.
4. **Battery Management System (BMS)**
In the battery management system, NCEP01T30T-VB can be used to efficiently control the charging and discharging process of the battery, ensuring the safe and efficient operation of the battery. Its high current carrying capacity makes it excellent in electric vehicles and energy storage systems.
5. **High-frequency switching power supply**
Due to its fast switching speed and low on-resistance, NCEP01T30T-VB is suitable for high-frequency switching power supply, which can achieve efficient energy conversion. It is widely used in computer power supply, communication equipment and other fields that require efficient power management.
In summary, NCEP01T30T-VB is a high-performance and high-efficiency MOSFET suitable for a variety of power electronic equipment, which can meet the requirements of modern electronic products for efficiency and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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