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NCEP01T13D-VB Product details
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NCEP01T13D-VB Product Introduction
NCEP01T13D-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 100V, suitable for a variety of power management and control schemes. The device has a maximum gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 3V, ensuring fast turn-on at lower gate voltages. The on-resistance (RDS(ON)) of NCEP01T13D-VB is 4mΩ at VGS = 10V, demonstrating excellent conduction performance and helping to reduce power losses. The device has a maximum drain current (ID) of 140A, making it ideal for applications that need to handle high power. Based on **Trench** technology, this MOSFET excels in efficiency and reliability and is widely used in modern electronic devices.
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NCEP01T13D-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 100V, suitable for a variety of power management and control schemes. The device has a maximum gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 3V, ensuring fast turn-on at lower gate voltages. The on-resistance (RDS(ON)) of NCEP01T13D-VB is 4mΩ at VGS = 10V, demonstrating excellent conduction performance and helping to reduce power losses. The device has a maximum drain current (ID) of 140A, making it ideal for applications that need to handle high power. Based on **Trench** technology, this MOSFET excels in efficiency and reliability and is widely used in modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Product model**: NCEP01T13D-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 140A
- **Technology**: Trench technology
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- **Product model**: NCEP01T13D-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 140A
- **Technology**: Trench technology
---
Domain and module applications：
Application fields and module examples
The high performance characteristics of NCEP01T13D-VB MOSFET make it widely used in many fields and modules. The following are specific examples:
1. **Power converter**
- This MOSFET is very suitable for **DC-DC converter**, which can efficiently convert the power supply voltage and provide stable output, suitable for power management of various electronic devices.
2. **Electric vehicle charging station**
- In **Electric vehicle charging equipment**, NCEP01T13D-VB can handle currents up to 140A, providing a reliable and efficient solution for battery charging, ensuring the safety and efficiency of the charging process.
3. **Motor drive**
- In **Motor control system**, this MOSFET can be used to drive high-power motors, and can efficiently control the start, stop and speed regulation of motors.
4. **Solar Inverter**
- In **Solar Inverter** applications, NCEP01T13D-VB can be used to convert DC power to AC power, which helps improve the energy efficiency of the system and meet the needs of renewable energy.
5. **High-Frequency Switching Power Supply**
- This MOSFET is suitable for **High-Frequency Switching Power Supply** design, which can provide fast switching and low conduction loss to meet the high efficiency requirements of modern electronic products.
Through the above application examples, NCEP01T13D-VB shows its wide applicability in high-power and high-voltage applications, providing an effective solution for power management and signal processing.
The high performance characteristics of NCEP01T13D-VB MOSFET make it widely used in many fields and modules. The following are specific examples:
1. **Power converter**
- This MOSFET is very suitable for **DC-DC converter**, which can efficiently convert the power supply voltage and provide stable output, suitable for power management of various electronic devices.
2. **Electric vehicle charging station**
- In **Electric vehicle charging equipment**, NCEP01T13D-VB can handle currents up to 140A, providing a reliable and efficient solution for battery charging, ensuring the safety and efficiency of the charging process.
3. **Motor drive**
- In **Motor control system**, this MOSFET can be used to drive high-power motors, and can efficiently control the start, stop and speed regulation of motors.
4. **Solar Inverter**
- In **Solar Inverter** applications, NCEP01T13D-VB can be used to convert DC power to AC power, which helps improve the energy efficiency of the system and meet the needs of renewable energy.
5. **High-Frequency Switching Power Supply**
- This MOSFET is suitable for **High-Frequency Switching Power Supply** design, which can provide fast switching and low conduction loss to meet the high efficiency requirements of modern electronic products.
Through the above application examples, NCEP01T13D-VB shows its wide applicability in high-power and high-voltage applications, providing an effective solution for power management and signal processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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