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NCEP0160F-VB Product details
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1. NCEP0160F-VB Product Introduction
NCEP0160F-VB is a high-efficiency N-channel power MOSFET in a **TO-220F** package, designed for high current and medium voltage applications. Its rated **100V** drain-source voltage (VDS) and ±20V gate-source voltage (VGS) enable it to meet the needs of a variety of power and switching applications. The device uses **Trench technology** and has extremely low on-resistance (RDS(ON)), providing users with excellent power efficiency and thermal management performance, and is particularly suitable for occasions with high requirements for efficiency and reliability.
NCEP0160F-VB is a high-efficiency N-channel power MOSFET in a **TO-220F** package, designed for high current and medium voltage applications. Its rated **100V** drain-source voltage (VDS) and ±20V gate-source voltage (VGS) enable it to meet the needs of a variety of power and switching applications. The device uses **Trench technology** and has extremely low on-resistance (RDS(ON)), providing users with excellent power efficiency and thermal management performance, and is particularly suitable for occasions with high requirements for efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-220F | Provides good heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET, widely used in switching and amplification circuits|
| **Drain-source voltage (VDS)** | 100V | Suitable for medium voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±20V | Wide range of gate drive voltage, suitable for a variety of control circuits|
| **Threshold voltage (Vth)** | 2.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 9 mΩ @ VGS=10V | Lower on-resistance, lower power consumption|
| **Maximum drain current (ID)** | 90A | Suitable for applications with medium to high current requirements |
| **Technology** | Trench | Special trench technology provides lower on-resistance and higher switching speed |
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-220F | Provides good heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET, widely used in switching and amplification circuits|
| **Drain-source voltage (VDS)** | 100V | Suitable for medium voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±20V | Wide range of gate drive voltage, suitable for a variety of control circuits|
| **Threshold voltage (Vth)** | 2.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 9 mΩ @ VGS=10V | Lower on-resistance, lower power consumption|
| **Maximum drain current (ID)** | 90A | Suitable for applications with medium to high current requirements |
| **Technology** | Trench | Special trench technology provides lower on-resistance and higher switching speed |
Domain and module applications：
III. Application fields and module examples
1. **Switching power supply (SMPS)**
NCEP0160F-VB is widely used in **switching power supply**. Due to its low on-resistance and high current capability, it can significantly improve energy conversion efficiency and is suitable for the design of industrial equipment and power modules.
2. **Electric vehicles**
This MOSFET is suitable for **electric vehicle power systems**, and can efficiently handle the high current requirements in motor drives to ensure stable power support during acceleration and deceleration.
3. **Motor drive**
In **motor control systems**, NCEP0160F-VB can be used as a driver device to help regulate the start and stop and speed of the motor, especially in high-power motor drives, providing reliable performance and fast response.
4. **LED drive circuit**
This device can also be used in **LED drive circuits**, which can stably drive high-power LEDs with high efficiency and meet the precise requirements of lighting equipment for current control.
Through the above application examples, NCEP0160F-VB demonstrates its excellent performance in the high current and medium voltage fields, and can meet the needs of various industrial and consumer electronic devices for efficient and reliable power switches.
1. **Switching power supply (SMPS)**
NCEP0160F-VB is widely used in **switching power supply**. Due to its low on-resistance and high current capability, it can significantly improve energy conversion efficiency and is suitable for the design of industrial equipment and power modules.
2. **Electric vehicles**
This MOSFET is suitable for **electric vehicle power systems**, and can efficiently handle the high current requirements in motor drives to ensure stable power support during acceleration and deceleration.
3. **Motor drive**
In **motor control systems**, NCEP0160F-VB can be used as a driver device to help regulate the start and stop and speed of the motor, especially in high-power motor drives, providing reliable performance and fast response.
4. **LED drive circuit**
This device can also be used in **LED drive circuits**, which can stably drive high-power LEDs with high efficiency and meet the precise requirements of lighting equipment for current control.
Through the above application examples, NCEP0160F-VB demonstrates its excellent performance in the high current and medium voltage fields, and can meet the needs of various industrial and consumer electronic devices for efficient and reliable power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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