Product introduction：
1. NCE90R1K2-VB Product Introduction
NCE90R1K2-VB is a high-voltage, low-power **single-channel N-type MOSFET** in **TO-220 package**, designed for high-voltage applications. Its **drain-source voltage (VDS) is up to 900V**, suitable for occasions requiring high-voltage protection, and can support **7A** of drain current. The **gate drive voltage (VGS) of this device is ±30V**, providing greater control flexibility. Its **on-resistance (RDS(ON)) is 950mΩ @ VGS=10V**. Although it is under high voltage, it still maintains low conduction loss, which is suitable for high-efficiency power conversion and switching applications. NCE90R1K2-VB adopts **SJ_Multi-EPI technology**, which enhances its electrical performance and reliability, and is suitable for a variety of industrial and power electronics applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
7A |
|
|
950mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. NCE90R1K2-VB Detailed parameter description
| **Parameter** | **Specification** | **Description** |
|----------------------|--------------------------------|---------------------------------------------|
| **Device type** | N-Channel MOSFET | Single channel N-type field effect transistor|
| **Package type** | TO-220 | Provides good heat dissipation performance, suitable for high power applications|
| **Drain-source voltage (VDS)** | 900V | Can withstand high voltage loads, suitable for power equipment and industrial systems|
| **Gate-source voltage (VGS)** | ±30V | Wide range of control signals, enhanced noise immunity|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 950mΩ @ VGS=10V | On-resistance at a specific gate voltage, reducing conduction losses|
| **Maximum drain current (ID)** | 7A | Can carry moderate current, suitable for high voltage applications|
| **Process technology** | SJ_Multi-EPI | Multi-layer epitaxial technology to improve electrical performance and reliability|
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Domain and module applications：
III. Application Fields and Module Examples
1. **High Voltage Power Supply**
NCE90R1K2-VB can be widely used in high voltage power supply systems, especially in **power converter** and **high voltage DC power supply (HVDC)**. As a switching element, it can effectively handle voltages up to 900V, achieve efficient power conversion, and ensure system stability and reliability.
2. **Lighting Control**
This device is suitable for **LED driver power** and **fluorescent lamp control circuit**, providing effective switching control under high voltage environment. Its high voltage and high efficiency characteristics enable it to achieve high efficiency and low energy consumption in various lighting systems.
3. **Motor Drive**
NCE90R1K2-VB can also be used in motor control systems, especially in **high voltage DC motor drive**. As the main switching element, it can provide stable current and power output at high voltage, suitable for drive control of electric vehicles and industrial equipment.
4. **Uninterruptible Power Supply (UPS) System**
In the uninterruptible power supply system, NCE90R1K2-VB can be used in **inverter circuit** to ensure stable output power during power outages, support high-voltage applications, and ensure the continuous operation of key equipment.
5. **Industrial Equipment**
This MOSFET is suitable for use in a variety of industrial applications, such as **welding equipment** and **laser equipment**. It can operate reliably under high voltage and improve the performance and safety of the equipment.
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In summary, NCE90R1K2-VB is an N-type MOSFET suitable for high-voltage applications. It is widely used in high-voltage power supply, lighting control, motor drive and uninterruptible power supply, meeting the high-efficiency requirements of various power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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