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NCE90R1K2I-VB Product details
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1. NCE90R1K2I-VB Product Introduction
NCE90R1K2I-VB is a high-performance N-channel power MOSFET in a **TO-251** package, designed for high voltage and medium current applications. Its **900V** drain-source voltage (VDS) and ±30V gate-source voltage (VGS) make it suitable for use in a variety of high-voltage applications. The device uses **SJ_Multi-EPI** technology, has a lower on-resistance (RDS(ON)), provides excellent power efficiency and thermal management performance, and is very suitable for applications that require high efficiency and reliability.
NCE90R1K2I-VB is a high-performance N-channel power MOSFET in a **TO-251** package, designed for high voltage and medium current applications. Its **900V** drain-source voltage (VDS) and ±30V gate-source voltage (VGS) make it suitable for use in a variety of high-voltage applications. The device uses **SJ_Multi-EPI** technology, has a lower on-resistance (RDS(ON)), provides excellent power efficiency and thermal management performance, and is very suitable for applications that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-251 | Suitable for medium power and high voltage applications, easy to dissipate heat|
| **Configuration** | Single N-channel | Single N-channel MOSFET, widely used in switching and amplifying circuits|
| **Drain-source voltage (VDS)** | 900V | Suitable for high voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate drive voltage, suitable for a variety of logic control circuits|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 950 mΩ @ VGS=10V | Low on-resistance, reduced power consumption|
| **Maximum drain current (ID)** | 7A | Suitable for applications handling medium current demands |
| **Technology** | SJ_Multi-EPI | Multi-junction technology for better performance and efficiency |
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-251 | Suitable for medium power and high voltage applications, easy to dissipate heat|
| **Configuration** | Single N-channel | Single N-channel MOSFET, widely used in switching and amplifying circuits|
| **Drain-source voltage (VDS)** | 900V | Suitable for high voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate drive voltage, suitable for a variety of logic control circuits|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 950 mΩ @ VGS=10V | Low on-resistance, reduced power consumption|
| **Maximum drain current (ID)** | 7A | Suitable for applications handling medium current demands |
| **Technology** | SJ_Multi-EPI | Multi-junction technology for better performance and efficiency |
Domain and module applications：
3. Application fields and module examples
1. **Power electronic devices**
NCE90R1K2I-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters**, and can provide efficient energy conversion under high voltage conditions, suitable for industrial power supplies and power modules.
2. **High-voltage motor control**
This MOSFET can be used in **high-voltage motor drive systems**. Through its high voltage and medium current capabilities, it ensures stable operation of the motor under high load conditions, suitable for industrial applications such as fans and water pumps.
3. **Inverter**
NCE90R1K2I-VB is suitable for **solar inverters** and **electric vehicle chargers**. It can handle high voltage input, improve inverter and charging efficiency, and meet the needs of renewable energy systems for efficient energy conversion.
4. **Switch control circuit**
The device can also be applied to **switch control circuit**, such as driving high-voltage relays or contactors. Its low on-resistance effectively reduces power consumption and is suitable for various control and protection circuits.
Through the above application examples, NCE90R1K2I-VB shows its excellent performance in the high voltage field, meeting the needs of various industrial and consumer electronic devices for efficient and reliable power switches.
1. **Power electronic devices**
NCE90R1K2I-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters**, and can provide efficient energy conversion under high voltage conditions, suitable for industrial power supplies and power modules.
2. **High-voltage motor control**
This MOSFET can be used in **high-voltage motor drive systems**. Through its high voltage and medium current capabilities, it ensures stable operation of the motor under high load conditions, suitable for industrial applications such as fans and water pumps.
3. **Inverter**
NCE90R1K2I-VB is suitable for **solar inverters** and **electric vehicle chargers**. It can handle high voltage input, improve inverter and charging efficiency, and meet the needs of renewable energy systems for efficient energy conversion.
4. **Switch control circuit**
The device can also be applied to **switch control circuit**, such as driving high-voltage relays or contactors. Its low on-resistance effectively reduces power consumption and is suitable for various control and protection circuits.
Through the above application examples, NCE90R1K2I-VB shows its excellent performance in the high voltage field, meeting the needs of various industrial and consumer electronic devices for efficient and reliable power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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