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NCE8601B-VB Product details
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1. NCE8601B-VB Product Introduction
NCE8601B-VB is a high-performance **Common Drain-N+N-Channel MOSFET**, using **TSSOP8 package**, designed for low-voltage and high-efficiency applications. The **drain-source voltage (V\(_{DS}\))** of this device can reach **30V**, and supports a gate-source voltage (V\(_{GS}\)) up to **±20V**. The **threshold voltage (V\(_{th}\))** of NCE8601B-VB is **1.7V**, ensuring that it can be started at low gate voltage, with good switching characteristics and response speed. In the on state, the MOSFET has an on-resistance (R\(_{DS(ON)}\)) of **19mΩ@V\(_{GS}\)=4.5V** and **12mΩ@V\(_{GS}\)=10V**. The extremely low conduction loss enables it to perform well in high current environments, and the maximum **drain current (I\(_D\))** can reach **8.6A**. Using **Trench technology**, the device has excellent thermal management and switching characteristics, suitable for a wide range of application scenarios.
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NCE8601B-VB is a high-performance **Common Drain-N+N-Channel MOSFET**, using **TSSOP8 package**, designed for low-voltage and high-efficiency applications. The **drain-source voltage (V\(_{DS}\))** of this device can reach **30V**, and supports a gate-source voltage (V\(_{GS}\)) up to **±20V**. The **threshold voltage (V\(_{th}\))** of NCE8601B-VB is **1.7V**, ensuring that it can be started at low gate voltage, with good switching characteristics and response speed. In the on state, the MOSFET has an on-resistance (R\(_{DS(ON)}\)) of **19mΩ@V\(_{GS}\)=4.5V** and **12mΩ@V\(_{GS}\)=10V**. The extremely low conduction loss enables it to perform well in high current environments, and the maximum **drain current (I\(_D\))** can reach **8.6A**. Using **Trench technology**, the device has excellent thermal management and switching characteristics, suitable for a wide range of application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
II. NCE8601B-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TSSOP8 | Compact package for space-constrained applications|
| **Channel Type** | Common Drain-N+N-Channel | Suitable for a variety of circuit configurations|
| **V\(_{DS}\)** | 30V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±20V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 1.7V | Gate Turn-On Threshold Voltage|
| **R\(_{DS(ON)}\)** | 19mΩ (V\(_{GS}\)=4.5V) | On-State Resistance|
| | 12mΩ (V\(_{GS}\)=10V) | On-state resistance|
| **I\(_D\)** | 8.6A | Maximum continuous drain current|
| **Technology** | Trench | Optimized structure to reduce conduction loss and increase switching speed|
| **Operating temperature range** | -55°C to 150°C | Wide temperature range to adapt to harsh working environment|
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| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TSSOP8 | Compact package for space-constrained applications|
| **Channel Type** | Common Drain-N+N-Channel | Suitable for a variety of circuit configurations|
| **V\(_{DS}\)** | 30V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±20V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 1.7V | Gate Turn-On Threshold Voltage|
| **R\(_{DS(ON)}\)** | 19mΩ (V\(_{GS}\)=4.5V) | On-State Resistance|
| | 12mΩ (V\(_{GS}\)=10V) | On-state resistance|
| **I\(_D\)** | 8.6A | Maximum continuous drain current|
| **Technology** | Trench | Optimized structure to reduce conduction loss and increase switching speed|
| **Operating temperature range** | -55°C to 150°C | Wide temperature range to adapt to harsh working environment|
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Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**
NCE8601B-VB can be widely used in **DC-DC converter**. With its low on-resistance and high current capability, it can improve energy conversion efficiency and reduce power consumption. It is suitable for mobile devices and embedded systems.
2. **LED drive circuit**
In **LED drive circuit**, NCE8601B-VB can be used as a switching element to effectively control the brightness and power consumption of LEDs, ensuring high efficiency and long life of lamps.
3. **Power management IC**
NCE8601B-VB can be used in **power management IC** to provide efficient control in power switching and load driving. It is suitable for portable electronic products such as smartphones and tablets.
4. **Power tools**
In **power tools**, this MOSFET can be used to drive motors, provide reliable power management, and ensure the normal operation of tools under high loads.
5. **Automotive electronics**
NCE8601B-VB is suitable for **automotive electronic systems**, such as control modules for power windows, seat adjustments, etc., to ensure efficient and stable power supply.
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The low on-resistance and high current capability of NCE8601B-VB make it excellent in a variety of high-performance and low-power applications, suitable for the needs of modern electronic products.
1. **DC-DC converter**
NCE8601B-VB can be widely used in **DC-DC converter**. With its low on-resistance and high current capability, it can improve energy conversion efficiency and reduce power consumption. It is suitable for mobile devices and embedded systems.
2. **LED drive circuit**
In **LED drive circuit**, NCE8601B-VB can be used as a switching element to effectively control the brightness and power consumption of LEDs, ensuring high efficiency and long life of lamps.
3. **Power management IC**
NCE8601B-VB can be used in **power management IC** to provide efficient control in power switching and load driving. It is suitable for portable electronic products such as smartphones and tablets.
4. **Power tools**
In **power tools**, this MOSFET can be used to drive motors, provide reliable power management, and ensure the normal operation of tools under high loads.
5. **Automotive electronics**
NCE8601B-VB is suitable for **automotive electronic systems**, such as control modules for power windows, seat adjustments, etc., to ensure efficient and stable power supply.
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The low on-resistance and high current capability of NCE8601B-VB make it excellent in a variety of high-performance and low-power applications, suitable for the needs of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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