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NCE85H21T-VB Product details
Back to previous pageProduct introduction：
1. NCE85H21T-VB Product Introduction
NCE85H21T-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage (VDS) of 80V, which can provide excellent performance in a variety of power electronics applications. The threshold voltage (Vth) of NCE85H21T-VB is 3.5V, ensuring smooth conduction under appropriate driving conditions. Its on-resistance (RDS(ON)) is 4mΩ at a gate voltage of 4.5V, and can be reduced to 2.8mΩ at a gate voltage of 10V. This extremely low on-resistance keeps its power consumption low under high current conditions, ensuring excellent thermal management and efficiency. With a continuous drain current (ID) of up to 215A, this MOSFET is very suitable for high-power applications, especially in power management and motor drive.
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NCE85H21T-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage (VDS) of 80V, which can provide excellent performance in a variety of power electronics applications. The threshold voltage (Vth) of NCE85H21T-VB is 3.5V, ensuring smooth conduction under appropriate driving conditions. Its on-resistance (RDS(ON)) is 4mΩ at a gate voltage of 4.5V, and can be reduced to 2.8mΩ at a gate voltage of 10V. This extremely low on-resistance keeps its power consumption low under high current conditions, ensuring excellent thermal management and efficiency. With a continuous drain current (ID) of up to 215A, this MOSFET is very suitable for high-power applications, especially in power management and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. NCE85H21T-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|-------------------------------------------|
| **Package Type** | TO247 | Suitable for high power applications, providing good heat dissipation. |
| **Configuration** | Single N-channel | Common configuration, suitable for switching and power management applications. |
| **Drain-Source Voltage (VDS)** | 80V | Able to handle high voltage, suitable for a variety of power electronics applications. |
| **Gate Drive Voltage (VGS)** | ±20V | Provides a flexible control range to meet a variety of drive requirements. |
| **Threshold Voltage (Vth)** | 3.5V | Ensures stability of conduction at the appropriate voltage. |
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=4.5V | Reduces conduction loss and improves system efficiency. |
| | 2.8mΩ @ VGS=10V | Further reduce conduction loss, suitable for high current applications. |
| **Maximum drain current (ID)** | 215A | Suitable for high power applications, widely used in various fields. |
| **Technology** | Trench | Improve device performance, reduce switching loss and on-resistance. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|-------------------------------------------|
| **Package Type** | TO247 | Suitable for high power applications, providing good heat dissipation. |
| **Configuration** | Single N-channel | Common configuration, suitable for switching and power management applications. |
| **Drain-Source Voltage (VDS)** | 80V | Able to handle high voltage, suitable for a variety of power electronics applications. |
| **Gate Drive Voltage (VGS)** | ±20V | Provides a flexible control range to meet a variety of drive requirements. |
| **Threshold Voltage (Vth)** | 3.5V | Ensures stability of conduction at the appropriate voltage. |
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=4.5V | Reduces conduction loss and improves system efficiency. |
| | 2.8mΩ @ VGS=10V | Further reduce conduction loss, suitable for high current applications. |
| **Maximum drain current (ID)** | 215A | Suitable for high power applications, widely used in various fields. |
| **Technology** | Trench | Improve device performance, reduce switching loss and on-resistance. |
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Domain and module applications：
III. Applications and module examples
1. **High-efficiency switching power supply (SMPS)**
NCE85H21T-VB is widely used in high-efficiency switching power supplies, which can provide stable output voltage and current. Its low on-resistance characteristics can significantly reduce switching losses and improve overall power efficiency, making it suitable for power management modules, especially in computer and server power supplies.
2. **Motor drive control**
This MOSFET is suitable for motor drive applications, such as drivers for DC motors and stepper motors. Due to its high current carrying capacity and fast switching performance, NCE85H21T-VB can achieve efficient control in applications such as power tools and electric vehicles.
3. **LED lighting drive**
NCE85H21T-VB can be used for LED driver power supplies, by efficiently converting the power supply voltage to a driving current suitable for LEDs. Its good conductivity and thermal management capabilities ensure that LEDs work at high efficiency and extend their service life, making it suitable for indoor and outdoor lighting.
4. **Electric Vehicle Charger**
In electric vehicle chargers, NCE85H21T-VB can support high-power charging applications. Its high conductivity and low on-resistance characteristics ensure high efficiency during fast charging, meeting the needs of fast charging of electric vehicles.
5. **Solar Inverter**
This MOSFET is suitable for use in solar inverters, providing stable support when converting DC power to AC power and feeding it into the grid. Its high withstand voltage capability and excellent electrical characteristics ensure stable operation in solar power generation systems, making it suitable for residential and commercial solar solutions.
The superior performance of NCE85H21T-VB gives it a wide range of application potential in the field of power electronics, especially in situations where high current and high efficiency are required.
1. **High-efficiency switching power supply (SMPS)**
NCE85H21T-VB is widely used in high-efficiency switching power supplies, which can provide stable output voltage and current. Its low on-resistance characteristics can significantly reduce switching losses and improve overall power efficiency, making it suitable for power management modules, especially in computer and server power supplies.
2. **Motor drive control**
This MOSFET is suitable for motor drive applications, such as drivers for DC motors and stepper motors. Due to its high current carrying capacity and fast switching performance, NCE85H21T-VB can achieve efficient control in applications such as power tools and electric vehicles.
3. **LED lighting drive**
NCE85H21T-VB can be used for LED driver power supplies, by efficiently converting the power supply voltage to a driving current suitable for LEDs. Its good conductivity and thermal management capabilities ensure that LEDs work at high efficiency and extend their service life, making it suitable for indoor and outdoor lighting.
4. **Electric Vehicle Charger**
In electric vehicle chargers, NCE85H21T-VB can support high-power charging applications. Its high conductivity and low on-resistance characteristics ensure high efficiency during fast charging, meeting the needs of fast charging of electric vehicles.
5. **Solar Inverter**
This MOSFET is suitable for use in solar inverters, providing stable support when converting DC power to AC power and feeding it into the grid. Its high withstand voltage capability and excellent electrical characteristics ensure stable operation in solar power generation systems, making it suitable for residential and commercial solar solutions.
The superior performance of NCE85H21T-VB gives it a wide range of application potential in the field of power electronics, especially in situations where high current and high efficiency are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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