NCE85H21TC-VB Product details
Product introduction:
NCE85H21TC-VB is a high-performance single N-channel power MOSFET in TO-247 package, designed for high current and high efficiency applications. It has a drain-source voltage (V_DS) of 80V and a gate-source voltage (V_GS) of ±20V. When V_GS=10V, the on-resistance (R_DS(ON)) is only 2.8mΩ, showing extremely low conduction loss. The maximum drain current (I_D) of the device can reach 215A, which is suitable for handling high power loads. NCE85H21TC-VB adopts Trench technology to ensure fast switching speed and excellent thermal performance, and is widely used in power management, motor drive, industrial control and other fields.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|-------------------------------|
| **Package** | TO-247 | Suitable for applications with high power and heat dissipation requirements|
| **Channel type** | Single N-channel | Provides excellent switching characteristics|
| **Drain-source voltage (V_DS)** | 80V | Can be used for medium and high voltage applications|
| **Gate-source voltage (V_GS)** | ±20V | Adapts to a variety of drive voltages|
| **Turning voltage (V_th)** | 3.5V | Ensures reliable conduction control|
| **On-resistance (R_DS(ON))** | 4mΩ @ V_GS=4.5V | Maintains low conduction loss at lower gate voltage|
| | 2.8mΩ @ V_GS=10V | Ensure low impedance at high current|
| **Maximum drain current (I_D)** | 215A | Support high current load|
| **Technology** | Trench | Improve switching speed and thermal performance|
---
Domain and module applications:
1. **Switching power supply**
NCE85H21TC-VB is widely used in **switching power supply** designs, including AC-DC and DC-DC converters. Its low on-resistance and high current capability enable it to play an important role in efficient power conversion and improve the overall efficiency of the system.
2. **Motor drive**
This MOSFET can be used in **motor drive** to support the control of high-current motors. It is widely used in industrial automation, household appliances and power tools, etc., to improve the performance and efficiency of motor systems.
3. **Battery management system**
The application of NCE85H21TC-VB in **battery management system (BMS)** ensures safe charging and discharging and effective management of batteries. It is particularly suitable for electric vehicles and energy storage systems, helping to improve battery life and safety.
4. **LED lighting driver**
This device can be used for high-power **LED driver applications**, providing stable power for LED lighting, ensuring efficient lighting effects under different load conditions, and is widely used in commercial and home lighting.
5. **Renewable energy system**
NCE85H21TC-VB is suitable for power conversion modules in **photovoltaic inverters** and wind energy systems, helping to achieve efficient energy management and promote the application of renewable energy.
---
With its superior performance and diverse application potential, NCE85H21TC-VB provides reliable solutions for modern power management and power conversion.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image