中文
English
NCE82H140D-VB Product details
Back to previous pageProduct introduction：
NCE82H140D-VB Product Introduction
NCE82H140D-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, ensuring its stability and reliability under a variety of power supply voltage conditions. Its threshold voltage (Vth) is 3V, allowing the MOSFET to turn on quickly at a lower voltage. The on-resistance (RDS(ON)) of NCE82H140D-VB is 10mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, showing extremely low conduction losses. The maximum drain current (ID) can reach 215A, making it suitable for applications requiring high power handling. This product uses **Trench** technology to provide excellent performance and high efficiency, suitable for modern high-frequency, high-efficiency power management applications.
---
NCE82H140D-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, ensuring its stability and reliability under a variety of power supply voltage conditions. Its threshold voltage (Vth) is 3V, allowing the MOSFET to turn on quickly at a lower voltage. The on-resistance (RDS(ON)) of NCE82H140D-VB is 10mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, showing extremely low conduction losses. The maximum drain current (ID) can reach 215A, making it suitable for applications requiring high power handling. This product uses **Trench** technology to provide excellent performance and high efficiency, suitable for modern high-frequency, high-efficiency power management applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Product model**: NCE82H140D-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 215A
- **Technology**: Trench technology
---
- **Product model**: NCE82H140D-VB
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 215A
- **Technology**: Trench technology
---
Domain and module applications：
Application fields and module examples
NCE82H140D-VB MOSFET demonstrates excellent performance in high-voltage and high-current power management applications. The following are its specific application fields and module examples:
1. **High-efficiency power converter**
- Due to its drain-source voltage capability of up to 80V and extremely low on-resistance, this MOSFET can be used in **AC-DC power converter** to achieve efficient energy conversion and reduce system heat generation.
2. **Motor drive control**
- In industrial automation and electric vehicles, NCE82H140D-VB can be used as a **motor driver** to support high current requirements and ensure efficient and reliable motor operation.
3. **Renewable energy system**
- In solar inverters and wind power generation systems, this MOSFET can help achieve efficient power conversion and storage, improving the overall utilization of renewable energy.
4. **Battery Management System**
- Suitable for **battery charger** and **battery management module**, NCE82H140D-VB can achieve safe charge and discharge management of the battery, ensuring the stability and long life of the battery.
5. **Communication Equipment and Power Amplifier**
- In mobile communication and base station equipment, this MOSFET can be used in **power amplifier** to ensure efficient amplification of signals, improve communication quality and system performance.
Through the above application examples, NCE82H140D-VB shows its importance in high voltage power supply and power management, providing reliable and efficient solutions for modern electronic devices.
NCE82H140D-VB MOSFET demonstrates excellent performance in high-voltage and high-current power management applications. The following are its specific application fields and module examples:
1. **High-efficiency power converter**
- Due to its drain-source voltage capability of up to 80V and extremely low on-resistance, this MOSFET can be used in **AC-DC power converter** to achieve efficient energy conversion and reduce system heat generation.
2. **Motor drive control**
- In industrial automation and electric vehicles, NCE82H140D-VB can be used as a **motor driver** to support high current requirements and ensure efficient and reliable motor operation.
3. **Renewable energy system**
- In solar inverters and wind power generation systems, this MOSFET can help achieve efficient power conversion and storage, improving the overall utilization of renewable energy.
4. **Battery Management System**
- Suitable for **battery charger** and **battery management module**, NCE82H140D-VB can achieve safe charge and discharge management of the battery, ensuring the stability and long life of the battery.
5. **Communication Equipment and Power Amplifier**
- In mobile communication and base station equipment, this MOSFET can be used in **power amplifier** to ensure efficient amplification of signals, improve communication quality and system performance.
Through the above application examples, NCE82H140D-VB shows its importance in high voltage power supply and power management, providing reliable and efficient solutions for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
