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NCE82H110WD-VB Product details
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1. NCE82H110WD-VB Product Introduction
NCE82H110WD-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for applications requiring high current and low conduction loss. The device has a maximum drain-source voltage (V_DS) of up to 80V, supports a gate-source voltage (V_GS) of ±20V, and has a threshold voltage (V_th) of 3V. At a gate drive of 10V, the on-resistance (R_DS(ON)) is only 6mΩ, and at a gate drive of 4.5V, the on-resistance is 10mΩ, making it excellent in applications with high current (I_D) up to 120A. NCE82H110WD-VB uses Trench technology, which enables excellent current control and high efficiency at low voltages, making it suitable for a variety of power management and drive circuits.
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NCE82H110WD-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for applications requiring high current and low conduction loss. The device has a maximum drain-source voltage (V_DS) of up to 80V, supports a gate-source voltage (V_GS) of ±20V, and has a threshold voltage (V_th) of 3V. At a gate drive of 10V, the on-resistance (R_DS(ON)) is only 6mΩ, and at a gate drive of 4.5V, the on-resistance is 10mΩ, making it excellent in applications with high current (I_D) up to 120A. NCE82H110WD-VB uses Trench technology, which enables excellent current control and high efficiency at low voltages, making it suitable for a variety of power management and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NCE82H110WD-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------------|-------------------------------|
| **Package type** | TO263 | Excellent heat dissipation performance|
| **Channel configuration** | Single N-channel | Suitable for power switching and current control|
| **Drain-source voltage (V_DS)** | 80V | Suitable for medium and high voltage applications|
| **Gate-source voltage (V_GS)** | ±20V | Provide stable driving capability|
| **Turning voltage (V_th)** | 3V | Improve control sensitivity|
| **On-resistance (R_DS(ON))** | 10mΩ @ V_GS=4.5V | Lower conduction loss|
| | 6mΩ @ V_GS=10V | Lower conduction loss|
| **Maximum drain current (I_D)** | 120A | High current carrying capacity|
| **Technology type** | Trench | Improve switching speed and efficiency|
| **Operating temperature range** | -55°C ~ 150°C | Suitable for harsh environments|
| **Maximum power consumption** | Depends on heat dissipation conditions, up to tens of watts | Need to be used with heat dissipation design|
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| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------------|-------------------------------|
| **Package type** | TO263 | Excellent heat dissipation performance|
| **Channel configuration** | Single N-channel | Suitable for power switching and current control|
| **Drain-source voltage (V_DS)** | 80V | Suitable for medium and high voltage applications|
| **Gate-source voltage (V_GS)** | ±20V | Provide stable driving capability|
| **Turning voltage (V_th)** | 3V | Improve control sensitivity|
| **On-resistance (R_DS(ON))** | 10mΩ @ V_GS=4.5V | Lower conduction loss|
| | 6mΩ @ V_GS=10V | Lower conduction loss|
| **Maximum drain current (I_D)** | 120A | High current carrying capacity|
| **Technology type** | Trench | Improve switching speed and efficiency|
| **Operating temperature range** | -55°C ~ 150°C | Suitable for harsh environments|
| **Maximum power consumption** | Depends on heat dissipation conditions, up to tens of watts | Need to be used with heat dissipation design|
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Domain and module applications：
3. Typical Applications and Modules of NCE82H110WD-VB
1. **Switching Power Supplies**
- NCE82H110WD-VB is an ideal choice for high-efficiency switching power supply design, supporting fast switching and high current loads.
- Ensure high efficiency of energy conversion in various electronic devices, especially in power adapters and battery chargers.
2. **Motor Drives**
- This MOSFET is suitable for motor drive applications such as brushless DC motors and stepper motors, capable of withstanding high currents and providing stable current control.
- Commonly used in industrial automation, robotics and electric vehicles, etc., to improve the efficiency and response speed of motors.
3. **Power Management Systems**
- Suitable for use in power management modules to optimize power distribution, reduce energy loss and improve overall efficiency.
- Commonly used in server power modules and data centers to support reliable operation of high-power devices.
4. **LED Drivers**
- In high-power LED lighting systems, NCE82H110WD-VB ensures stable current supply and is suitable for various lighting applications.
- Suitable for commercial lighting, automotive lighting and indoor lighting, improving the overall performance of lighting systems.
5. **Inverters**
- Can be used in inverters to convert DC to AC, widely used in renewable energy systems such as solar and wind power.
- Provides efficient current control to ensure stable operation under different load conditions.
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With its high voltage and high current capabilities, NCE82H110WD-VB excels in switching power supplies, motor drives, and power management, making it an ideal choice for high-efficiency power solutions.
1. **Switching Power Supplies**
- NCE82H110WD-VB is an ideal choice for high-efficiency switching power supply design, supporting fast switching and high current loads.
- Ensure high efficiency of energy conversion in various electronic devices, especially in power adapters and battery chargers.
2. **Motor Drives**
- This MOSFET is suitable for motor drive applications such as brushless DC motors and stepper motors, capable of withstanding high currents and providing stable current control.
- Commonly used in industrial automation, robotics and electric vehicles, etc., to improve the efficiency and response speed of motors.
3. **Power Management Systems**
- Suitable for use in power management modules to optimize power distribution, reduce energy loss and improve overall efficiency.
- Commonly used in server power modules and data centers to support reliable operation of high-power devices.
4. **LED Drivers**
- In high-power LED lighting systems, NCE82H110WD-VB ensures stable current supply and is suitable for various lighting applications.
- Suitable for commercial lighting, automotive lighting and indoor lighting, improving the overall performance of lighting systems.
5. **Inverters**
- Can be used in inverters to convert DC to AC, widely used in renewable energy systems such as solar and wind power.
- Provides efficient current control to ensure stable operation under different load conditions.
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With its high voltage and high current capabilities, NCE82H110WD-VB excels in switching power supplies, motor drives, and power management, making it an ideal choice for high-efficiency power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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