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NCE82H110D-VB Product details
Back to previous pageProduct introduction：
1. NCE82H110D-VB Product Introduction
NCE82H110D-VB is a high-performance single N-channel MOSFET in a **TO-263 package**, designed for high-current and high-efficiency switching applications. Its **drain-source voltage (V\(_{DS}\))** reaches **80V**, and its **gate-source voltage (V\(_{GS}\))** can withstand up to **±20V**. The **on-resistance (R\(_{DS(ON)}\))** of this MOSFET is **10mΩ@V\(_{GS}\)=4.5V** and **6mΩ@V\(_{GS}\)=10V**, ensuring extremely low power consumption in the on state. The maximum **drain current (I\(_D\))** is **120A**, allowing it to maintain efficient operation under high load conditions. Using **Trench technology**, the NCE82H110D-VB provides excellent switching speed and thermal performance, making it ideal for various power management systems and drive circuits.
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NCE82H110D-VB is a high-performance single N-channel MOSFET in a **TO-263 package**, designed for high-current and high-efficiency switching applications. Its **drain-source voltage (V\(_{DS}\))** reaches **80V**, and its **gate-source voltage (V\(_{GS}\))** can withstand up to **±20V**. The **on-resistance (R\(_{DS(ON)}\))** of this MOSFET is **10mΩ@V\(_{GS}\)=4.5V** and **6mΩ@V\(_{GS}\)=10V**, ensuring extremely low power consumption in the on state. The maximum **drain current (I\(_D\))** is **120A**, allowing it to maintain efficient operation under high load conditions. Using **Trench technology**, the NCE82H110D-VB provides excellent switching speed and thermal performance, making it ideal for various power management systems and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE82H110D-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-263 | Suitable package for compact high-power applications|
| **Channel type** | Single N-channel | Enhancement mode MOSFET, suitable for high voltage switch control|
| **V\(_{DS}\)** | 80V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range|
| **V\(_{th}\)** | 3V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 10mΩ (V\(_{GS}\)=4.5V) | On-state resistance|
| | 6mΩ (V\(_{GS}\)=10V) | On-state resistance|
| **I\(_D\)** | 120A | Maximum continuous drain current|
| **Technology** | Trench | Optimized structure to reduce conduction loss and increase switching speed|
| **Operating temperature range** | -55°C to 150°C | Wide temperature range to adapt to harsh working environments|
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| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-263 | Suitable package for compact high-power applications|
| **Channel type** | Single N-channel | Enhancement mode MOSFET, suitable for high voltage switch control|
| **V\(_{DS}\)** | 80V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range|
| **V\(_{th}\)** | 3V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 10mΩ (V\(_{GS}\)=4.5V) | On-state resistance|
| | 6mΩ (V\(_{GS}\)=10V) | On-state resistance|
| **I\(_D\)** | 120A | Maximum continuous drain current|
| **Technology** | Trench | Optimized structure to reduce conduction loss and increase switching speed|
| **Operating temperature range** | -55°C to 150°C | Wide temperature range to adapt to harsh working environments|
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Domain and module applications：
3. Application fields and module examples
1. **Power management system**
NCE82H110D-VB is very suitable for **high-efficiency switching power supply (SMPS)**, which can withstand 80V input voltage and 120A output current, has extremely low conduction loss, and improves the overall efficiency and reliability of the power supply.
2. **Power tools**
In **power tools**, NCE82H110D-VB can be used as a switching element to achieve efficient power conversion and control, ensuring smooth operation of the tool under high load.
3. **Electric vehicles**
NCE82H110D-VB can also be used in **electric vehicle charging and driving systems**. As a high-power switching device, it can effectively manage the battery charging and discharging process, increase charging speed and optimize energy use.
4. **Industrial Automation**
In **industrial automation equipment**, this MOSFET can be used in motor drive and control systems, providing fast switching capability and high current handling capability to ensure efficient operation of the equipment.
5. **LED Driver**
NCE82H110D-VB can be used in **LED driver circuits**, supporting stable operation of high-power LEDs while ensuring high efficiency and providing better light efficiency.
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The high current capability and low on-resistance of NCE82H110D-VB enable it to perform well in a variety of high-power, high-efficiency applications, and is suitable for the needs of modern power electronics design.
1. **Power management system**
NCE82H110D-VB is very suitable for **high-efficiency switching power supply (SMPS)**, which can withstand 80V input voltage and 120A output current, has extremely low conduction loss, and improves the overall efficiency and reliability of the power supply.
2. **Power tools**
In **power tools**, NCE82H110D-VB can be used as a switching element to achieve efficient power conversion and control, ensuring smooth operation of the tool under high load.
3. **Electric vehicles**
NCE82H110D-VB can also be used in **electric vehicle charging and driving systems**. As a high-power switching device, it can effectively manage the battery charging and discharging process, increase charging speed and optimize energy use.
4. **Industrial Automation**
In **industrial automation equipment**, this MOSFET can be used in motor drive and control systems, providing fast switching capability and high current handling capability to ensure efficient operation of the equipment.
5. **LED Driver**
NCE82H110D-VB can be used in **LED driver circuits**, supporting stable operation of high-power LEDs while ensuring high efficiency and providing better light efficiency.
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The high current capability and low on-resistance of NCE82H110D-VB enable it to perform well in a variety of high-power, high-efficiency applications, and is suitable for the needs of modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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