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NCE8205C-VB Product details
Back to previous pageProduct introduction：
1. NCE8205C-VB Product Introduction
NCE8205C-VB is a high-performance N-channel MOSFET in a **TSSOP-8** package, designed for low voltage and high frequency applications. The device uses **Trench technology**, has extremely low on-resistance (RDS(ON)) and high conductivity, and is suitable for a variety of switching and amplification applications. Its **20V** drain-source voltage (VDS) and ±12V gate-source voltage (VGS) enable it to operate stably in a medium voltage environment. The threshold voltage (Vth) of NCE8205C-VB is between **0.5V and 1.5V**, which is suitable for drive circuits compatible with a variety of logic levels.
NCE8205C-VB is a high-performance N-channel MOSFET in a **TSSOP-8** package, designed for low voltage and high frequency applications. The device uses **Trench technology**, has extremely low on-resistance (RDS(ON)) and high conductivity, and is suitable for a variety of switching and amplification applications. Its **20V** drain-source voltage (VDS) and ±12V gate-source voltage (VGS) enable it to operate stably in a medium voltage environment. The threshold voltage (Vth) of NCE8205C-VB is between **0.5V and 1.5V**, which is suitable for drive circuits compatible with a variety of logic levels.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|---------------------------|----------------------------------------------|
| **Package type** | TSSOP-8 | Ultra-thin and small size package, suitable for high-density circuit design|
| **Configuration** | Common source N+N channel | Suitable for high-frequency switching and amplification applications|
| **Drain-source voltage (VDS)** | 20V | Suitable for medium voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±12V | Wide range of gate drive voltage, suitable for a variety of logic levels|
| **Threshold voltage (Vth)** | 0.5V ~ 1.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 18 mΩ @ VGS=2.5V | Lower on-resistance, reduced power consumption|
| **On-resistance (RDS(ON))** | 14 mΩ @ VGS=4.5V | Lower on-resistance, improved efficiency|
| **Maximum drain current (ID)** | 7.6A | Suitable for applications with medium current requirements|
| **Technology** | Trench | Special trench technology provides lower on-resistance and higher switching speed|
| **Parameter** | **Value** | **Description** |
|---------------------|---------------------------|----------------------------------------------|
| **Package type** | TSSOP-8 | Ultra-thin and small size package, suitable for high-density circuit design|
| **Configuration** | Common source N+N channel | Suitable for high-frequency switching and amplification applications|
| **Drain-source voltage (VDS)** | 20V | Suitable for medium voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±12V | Wide range of gate drive voltage, suitable for a variety of logic levels|
| **Threshold voltage (Vth)** | 0.5V ~ 1.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 18 mΩ @ VGS=2.5V | Lower on-resistance, reduced power consumption|
| **On-resistance (RDS(ON))** | 14 mΩ @ VGS=4.5V | Lower on-resistance, improved efficiency|
| **Maximum drain current (ID)** | 7.6A | Suitable for applications with medium current requirements|
| **Technology** | Trench | Special trench technology provides lower on-resistance and higher switching speed|
Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**
NCE8205C-VB can be widely used in **switching power supplies (SMPS)** and **buck converters**. With its low on-resistance and high switching speed, it can improve energy conversion efficiency and meet the needs of electronic devices with high energy efficiency requirements.
2. **Motor drive**
This MOSFET is suitable for **motor control modules**, such as DC motor and stepper motor drive. It can efficiently control the start and stop and speed regulation of the motor, and improve the system response speed and reliability.
3. **LED drive**
In LED lighting applications, NCE8205C-VB can be used as a switching element in **LED drive circuits**. Its low on-resistance ensures that power consumption is effectively reduced under high-brightness lighting, improving overall lighting efficiency.
4. **Portable devices**
Due to its small package size and high efficiency, the NCE8205C-VB is ideal for use in **mobile devices and portable electronics**, providing reliable power management and control in limited space.
Through these application examples, the NCE8205C-VB demonstrates its outstanding performance in modern electronic devices, especially in areas that require efficient energy conversion and miniaturized design.
1. **DC-DC converter**
NCE8205C-VB can be widely used in **switching power supplies (SMPS)** and **buck converters**. With its low on-resistance and high switching speed, it can improve energy conversion efficiency and meet the needs of electronic devices with high energy efficiency requirements.
2. **Motor drive**
This MOSFET is suitable for **motor control modules**, such as DC motor and stepper motor drive. It can efficiently control the start and stop and speed regulation of the motor, and improve the system response speed and reliability.
3. **LED drive**
In LED lighting applications, NCE8205C-VB can be used as a switching element in **LED drive circuits**. Its low on-resistance ensures that power consumption is effectively reduced under high-brightness lighting, improving overall lighting efficiency.
4. **Portable devices**
Due to its small package size and high efficiency, the NCE8205C-VB is ideal for use in **mobile devices and portable electronics**, providing reliable power management and control in limited space.
Through these application examples, the NCE8205C-VB demonstrates its outstanding performance in modern electronic devices, especially in areas that require efficient energy conversion and miniaturized design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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