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NCE80T900K-VB Product details
Back to previous pageProduct introduction：
1. NCE80T900K-VB Product Introduction
NCE80T900K-VB is a high voltage, single N-channel MOSFET in a TO-252 package, designed for high voltage and high power applications. Its drain-source voltage (V\(_{DS}\)) is up to 800V, and the gate-source voltage (V\(_{GS}\)) operates in the range of ±30V, making it very suitable for power management systems that require high voltage resistance. The device has an on-resistance (R\(_{DS(ON)}\)) of 770mΩ@V\(_{GS}\)=10V and a maximum continuous drain current of 7A, ensuring good switching efficiency and reliability in high voltage applications. NCE80T900K-VB uses SJ_Multi-EPI technology, which greatly reduces switching losses and improves the overall performance of power conversion. It is widely used in power conversion, drive control and other fields.
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NCE80T900K-VB is a high voltage, single N-channel MOSFET in a TO-252 package, designed for high voltage and high power applications. Its drain-source voltage (V\(_{DS}\)) is up to 800V, and the gate-source voltage (V\(_{GS}\)) operates in the range of ±30V, making it very suitable for power management systems that require high voltage resistance. The device has an on-resistance (R\(_{DS(ON)}\)) of 770mΩ@V\(_{GS}\)=10V and a maximum continuous drain current of 7A, ensuring good switching efficiency and reliability in high voltage applications. NCE80T900K-VB uses SJ_Multi-EPI technology, which greatly reduces switching losses and improves the overall performance of power conversion. It is widely used in power conversion, drive control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NCE80T900K-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-252 | Suitable package for compact high-power applications|
| **Channel type** | Single N-channel | Enhancement mode MOSFET, suitable for high voltage switch control|
| **V\(_{DS}\)** | 800V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 770mΩ (V\(_{GS}\)=10V) | On-state resistance|
| **I\(_D\)** | 7A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | Superjunction multi-epitaxial technology for improved energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide temperature range for harsh operating environments|
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| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-252 | Suitable package for compact high-power applications|
| **Channel type** | Single N-channel | Enhancement mode MOSFET, suitable for high voltage switch control|
| **V\(_{DS}\)** | 800V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 770mΩ (V\(_{GS}\)=10V) | On-state resistance|
| **I\(_D\)** | 7A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | Superjunction multi-epitaxial technology for improved energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide temperature range for harsh operating environments|
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Domain and module applications：
III. Application fields and module examples
1. **Switching power supply (SMPS)**
NCE80T900K-VB is very suitable for **high-voltage switching power supply**, which can handle 800V input voltage, reduce power loss and improve conversion efficiency. Its low on-resistance characteristics make it perform well in high-frequency switching applications.
2. **Power converter**
In **photovoltaic inverter**, this MOSFET can be used for high-voltage DC to AC conversion, which can effectively improve the efficiency of energy conversion, while reducing thermal management requirements, and is suitable for long-term stable operation.
3. **Motor drive**
NCE80T900K-VB can be used in **motor control systems**, such as brushless DC motor (BLDC) and stepper motor drives, which can provide efficient power conversion and adapt to harsh working environments.
4. **Battery Management System (BMS)**
In **Battery Management System**, NCE80T900K-VB can be used as a switching element to control the battery charging and discharging process, ensuring safe and efficient energy management.
5. **Electric Vehicle Charging Pile**
This device is also widely used in **Electric Vehicle Charging Infrastructure**, which can support 800V high-voltage charging requirements and improve charging speed and efficiency.
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NCE80T900K-VB's high withstand voltage, low conduction loss and wide operating temperature range make it have a wide range of application potential in the field of power electronics, especially suitable for use in systems with high voltage and high power requirements.
1. **Switching power supply (SMPS)**
NCE80T900K-VB is very suitable for **high-voltage switching power supply**, which can handle 800V input voltage, reduce power loss and improve conversion efficiency. Its low on-resistance characteristics make it perform well in high-frequency switching applications.
2. **Power converter**
In **photovoltaic inverter**, this MOSFET can be used for high-voltage DC to AC conversion, which can effectively improve the efficiency of energy conversion, while reducing thermal management requirements, and is suitable for long-term stable operation.
3. **Motor drive**
NCE80T900K-VB can be used in **motor control systems**, such as brushless DC motor (BLDC) and stepper motor drives, which can provide efficient power conversion and adapt to harsh working environments.
4. **Battery Management System (BMS)**
In **Battery Management System**, NCE80T900K-VB can be used as a switching element to control the battery charging and discharging process, ensuring safe and efficient energy management.
5. **Electric Vehicle Charging Pile**
This device is also widely used in **Electric Vehicle Charging Infrastructure**, which can support 800V high-voltage charging requirements and improve charging speed and efficiency.
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NCE80T900K-VB's high withstand voltage, low conduction loss and wide operating temperature range make it have a wide range of application potential in the field of power electronics, especially suitable for use in systems with high voltage and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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