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NCE80T900F-VB Product details
Back to previous pageProduct introduction：
1. NCE80T900F-VB Product Introduction
NCE80T900F-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage power supply and power electronics applications. It has a drain-source voltage (VDS) of up to 800V and a gate drive voltage (VGS) of ±30V, which enables it to perform well in various high voltage environments. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring effective conduction under appropriate driving conditions. The on-resistance (RDS(ON)) is 770mΩ @ VGS=10V, which can support up to 7A of continuous drain current (ID) while maintaining low power consumption. Using SJ_Multi-EPI technology, NCE80T900F-VB shows good stability and high efficiency in electrical characteristics, and is suitable for high-power, high-frequency power conversion applications.
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NCE80T900F-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage power supply and power electronics applications. It has a drain-source voltage (VDS) of up to 800V and a gate drive voltage (VGS) of ±30V, which enables it to perform well in various high voltage environments. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring effective conduction under appropriate driving conditions. The on-resistance (RDS(ON)) is 770mΩ @ VGS=10V, which can support up to 7A of continuous drain current (ID) while maintaining low power consumption. Using SJ_Multi-EPI technology, NCE80T900F-VB shows good stability and high efficiency in electrical characteristics, and is suitable for high-power, high-frequency power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NCE80T900F-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|-------------------------------------------|
| **Package Type** | TO220F | Provides excellent heat dissipation performance and is suitable for high-power applications. |
| **Configuration** | Single N-channel | Commonly used in power conversion and high-voltage drive circuits. |
| **Drain-Source Voltage (VDS)** | 800V | Suitable for switching and inverter circuits in high-voltage environments. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to the driving requirements of various control circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Achieves stable conduction at moderate voltages. |
| **On-resistance (RDS(ON))** | 770mΩ @ VGS=10V | Reduces switching losses and improves efficiency. |
| **Maximum drain current (ID)** | 7A | Meets medium power requirements and is suitable for a variety of loads. |
| **Technology** | SJ_Multi-EPI | Improves voltage resistance and switching speed, and reduces conduction losses. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|-------------------------------------------|
| **Package Type** | TO220F | Provides excellent heat dissipation performance and is suitable for high-power applications. |
| **Configuration** | Single N-channel | Commonly used in power conversion and high-voltage drive circuits. |
| **Drain-Source Voltage (VDS)** | 800V | Suitable for switching and inverter circuits in high-voltage environments. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to the driving requirements of various control circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Achieves stable conduction at moderate voltages. |
| **On-resistance (RDS(ON))** | 770mΩ @ VGS=10V | Reduces switching losses and improves efficiency. |
| **Maximum drain current (ID)** | 7A | Meets medium power requirements and is suitable for a variety of loads. |
| **Technology** | SJ_Multi-EPI | Improves voltage resistance and switching speed, and reduces conduction losses. |
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Domain and module applications：
III. Application fields and module examples
1. **Industrial power converter**
NCE80T900F-VB is often used for voltage conversion and regulation in high-power switch-mode power supplies (SMPS), especially for industrial applications with high power requirements. This MOSFET can operate at a high energy conversion rate under high load conditions, ensuring system stability and efficiency.
2. **Photovoltaic inverter**
In photovoltaic power generation systems, this MOSFET is widely used in inverter modules to help convert solar energy into AC power. Its high voltage withstand capability of up to 800V ensures that it can handle high voltage input and operate stably at high efficiency, suitable for solar panel applications.
3. **Electric vehicle charging pile**
NCE80T900F-VB is suitable for high-voltage switch applications in electric vehicle charging infrastructure, supporting high-power fast charging. Due to its excellent heat dissipation performance and low on-resistance, it can provide high current in a short time to meet the charging needs of modern electric vehicles.
4. **LED drive circuit**
In high-power LED lighting systems, this MOSFET can effectively drive high-voltage LED modules to ensure the brightness and efficiency of the light source. Its stability and voltage resistance make it an ideal choice for high-efficiency LED drivers.
5. **Wind power generation system**
In wind energy conversion systems, NCE80T900F-VB can be used in high-voltage inverter modules to help convert DC power into AC power to meet grid requirements. Its high efficiency and good thermal management characteristics help improve the overall performance and reliability of wind power generation.
With its high voltage resistance and high efficiency, NCE80T900F-VB demonstrates excellent performance in power electronics applications and is an ideal choice for various high-power and high-voltage applications.
1. **Industrial power converter**
NCE80T900F-VB is often used for voltage conversion and regulation in high-power switch-mode power supplies (SMPS), especially for industrial applications with high power requirements. This MOSFET can operate at a high energy conversion rate under high load conditions, ensuring system stability and efficiency.
2. **Photovoltaic inverter**
In photovoltaic power generation systems, this MOSFET is widely used in inverter modules to help convert solar energy into AC power. Its high voltage withstand capability of up to 800V ensures that it can handle high voltage input and operate stably at high efficiency, suitable for solar panel applications.
3. **Electric vehicle charging pile**
NCE80T900F-VB is suitable for high-voltage switch applications in electric vehicle charging infrastructure, supporting high-power fast charging. Due to its excellent heat dissipation performance and low on-resistance, it can provide high current in a short time to meet the charging needs of modern electric vehicles.
4. **LED drive circuit**
In high-power LED lighting systems, this MOSFET can effectively drive high-voltage LED modules to ensure the brightness and efficiency of the light source. Its stability and voltage resistance make it an ideal choice for high-efficiency LED drivers.
5. **Wind power generation system**
In wind energy conversion systems, NCE80T900F-VB can be used in high-voltage inverter modules to help convert DC power into AC power to meet grid requirements. Its high efficiency and good thermal management characteristics help improve the overall performance and reliability of wind power generation.
With its high voltage resistance and high efficiency, NCE80T900F-VB demonstrates excellent performance in power electronics applications and is an ideal choice for various high-power and high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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