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NCE80T560K-VB Product details
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1. NCE80T560K-VB Product Introduction
NCE80T560K-VB is a **single-channel N-type MOSFET** in a **TO-252 package**, designed for high-voltage applications. Its **drain-source voltage (VDS) is 800V**, which can withstand high voltage strain and is suitable for use in various power electronic systems. The device has a **gate drive voltage (VGS) of ±30V** and supports a drain current of up to **11A**, which is suitable for high-power environments. Its **on-resistance (RDS(ON)) is 380mΩ @ VGS=10V**, which effectively reduces power consumption in the on state. Using **super junction (SJ) multi-epitaxial technology**, NCE80T560K-VB can improve conductivity while reducing heat loss, ensuring stable operation of the equipment under high load conditions.
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NCE80T560K-VB is a **single-channel N-type MOSFET** in a **TO-252 package**, designed for high-voltage applications. Its **drain-source voltage (VDS) is 800V**, which can withstand high voltage strain and is suitable for use in various power electronic systems. The device has a **gate drive voltage (VGS) of ±30V** and supports a drain current of up to **11A**, which is suitable for high-power environments. Its **on-resistance (RDS(ON)) is 380mΩ @ VGS=10V**, which effectively reduces power consumption in the on state. Using **super junction (SJ) multi-epitaxial technology**, NCE80T560K-VB can improve conductivity while reducing heat loss, ensuring stable operation of the equipment under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NCE80T560K-VB Detailed parameter description
| **Parameter** | **Specification** | **Description** |
|----------------------|--------------------------------|---------------------------------------------|
| **Device type** | N-Channel MOSFET | Single channel N-type field effect transistor|
| **Package type** | TO-252 | Provides good heat dissipation performance, suitable for high power applications|
| **Drain-source voltage (VDS)** | 800V | Can withstand high voltage loads, suitable for power equipment and industrial systems|
| **Gate-source voltage (VGS)** | ±30V | Wide range of control signals, enhanced noise immunity|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 380mΩ @ VGS=10V | On-resistance at a specified voltage, reducing conduction losses|
| **Maximum drain current (ID)** | 11A | Can carry large current, suitable for high power applications|
| **Process technology** | SJ Multi-EPI | Super junction technology, improves conductivity and efficiency, reduces heat loss|
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| **Parameter** | **Specification** | **Description** |
|----------------------|--------------------------------|---------------------------------------------|
| **Device type** | N-Channel MOSFET | Single channel N-type field effect transistor|
| **Package type** | TO-252 | Provides good heat dissipation performance, suitable for high power applications|
| **Drain-source voltage (VDS)** | 800V | Can withstand high voltage loads, suitable for power equipment and industrial systems|
| **Gate-source voltage (VGS)** | ±30V | Wide range of control signals, enhanced noise immunity|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 380mΩ @ VGS=10V | On-resistance at a specified voltage, reducing conduction losses|
| **Maximum drain current (ID)** | 11A | Can carry large current, suitable for high power applications|
| **Process technology** | SJ Multi-EPI | Super junction technology, improves conductivity and efficiency, reduces heat loss|
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Domain and module applications：
3. Application fields and module examples
1. **Photovoltaic Inverters**
NCE80T560K-VB can be widely used in inverter modules in photovoltaic systems, responsible for **converting direct current generated by solar energy into alternating current**. Its high voltage tolerance of 800V enables it to effectively handle the current from solar panels, while its low on-resistance helps reduce energy losses and improve overall system efficiency.
2. **Switching Power Supply (SMPS) and High-Voltage Power Supply Modules**
In switching power supply design, NCE80T560K-VB can be used for **power supply modules with high-voltage input**, such as industrial power supplies and power supply for telecommunication equipment. The high voltage and current characteristics of the device enable it to meet the requirements of power management and ensure the reliability and stability of the system under high load conditions.
3. **EV Chargers**
NCE80T560K-VB is suitable for **DC-DC conversion modules** in EV chargers, which can effectively support high-voltage charging requirements. The characteristics of this MOSFET can provide efficient power conversion during battery charging, ensuring fast response and efficient operation of the charger.
4. **Industrial Motor Control**
In industrial automation and motor control systems, this device can be used in **high-voltage drive circuits**, such as inverters and servo motor drive modules. Its rated current of 11A and high-voltage capability enable it to perform well in a variety of motor control applications, ensuring the stability and efficiency of equipment operation.
5. **Uninterruptible Power Supply (UPS) Systems**
NCE80T560K-VB is also suitable for inverter and conversion circuits in UPS systems, ensuring **stable power switching** during power outages or fluctuations, and maintaining the operation of critical equipment.
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In general, NCE80T560K-VB is a high-performance N-type MOSFET, which is widely used in photovoltaics, switching power supplies, charging piles and industrial automation, and is suitable for various high-voltage and high-power power electronic systems.
1. **Photovoltaic Inverters**
NCE80T560K-VB can be widely used in inverter modules in photovoltaic systems, responsible for **converting direct current generated by solar energy into alternating current**. Its high voltage tolerance of 800V enables it to effectively handle the current from solar panels, while its low on-resistance helps reduce energy losses and improve overall system efficiency.
2. **Switching Power Supply (SMPS) and High-Voltage Power Supply Modules**
In switching power supply design, NCE80T560K-VB can be used for **power supply modules with high-voltage input**, such as industrial power supplies and power supply for telecommunication equipment. The high voltage and current characteristics of the device enable it to meet the requirements of power management and ensure the reliability and stability of the system under high load conditions.
3. **EV Chargers**
NCE80T560K-VB is suitable for **DC-DC conversion modules** in EV chargers, which can effectively support high-voltage charging requirements. The characteristics of this MOSFET can provide efficient power conversion during battery charging, ensuring fast response and efficient operation of the charger.
4. **Industrial Motor Control**
In industrial automation and motor control systems, this device can be used in **high-voltage drive circuits**, such as inverters and servo motor drive modules. Its rated current of 11A and high-voltage capability enable it to perform well in a variety of motor control applications, ensuring the stability and efficiency of equipment operation.
5. **Uninterruptible Power Supply (UPS) Systems**
NCE80T560K-VB is also suitable for inverter and conversion circuits in UPS systems, ensuring **stable power switching** during power outages or fluctuations, and maintaining the operation of critical equipment.
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In general, NCE80T560K-VB is a high-performance N-type MOSFET, which is widely used in photovoltaics, switching power supplies, charging piles and industrial automation, and is suitable for various high-voltage and high-power power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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