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NCE80T560I-VB Product details
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1. NCE80T560I-VB Product Introduction
NCE80T560I-VB is a single N-channel power MOSFET in TO-251 package with a high drain-source voltage (V\(_{DS}\)) of 800V and a gate voltage tolerance of ±30V. Based on **Super-Junction and Multi-EPI technologies**, the product is designed to provide low on-resistance (R\(_{DS(on)}\) is 500mΩ@V\(_{GS}\)=10V) and high-efficiency switching performance. This feature makes the NCE80T560I-VB an ideal choice for high voltage and high current applications, suitable for a variety of industrial and power electronic equipment.
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NCE80T560I-VB is a single N-channel power MOSFET in TO-251 package with a high drain-source voltage (V\(_{DS}\)) of 800V and a gate voltage tolerance of ±30V. Based on **Super-Junction and Multi-EPI technologies**, the product is designed to provide low on-resistance (R\(_{DS(on)}\) is 500mΩ@V\(_{GS}\)=10V) and high-efficiency switching performance. This feature makes the NCE80T560I-VB an ideal choice for high voltage and high current applications, suitable for a variety of industrial and power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE80T560I-VB Detailed Parameter Description
| Parameter | Value | Description|
|---------------------|--------------------------------|--------------------------------|
| **Package** | TO-251 | Suitable for high voltage and high current applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET |
| **Drain-source voltage (V\(_{DS}\))** | 800V | Support high voltage applications|
| **Gate-source voltage (V\(_{GS}\))** | ±30V | Gate voltage tolerance range|
| **Turning voltage (V\(_{th}\))** | 3.5V | Gate drive voltage turn-on threshold|
| **On-resistance (R\(_{DS(on)}\))** | 500mΩ @ V\(_{GS}\)=10V | On-state impedance affects efficiency and heat dissipation|
| **Drain current (I\(_{D}\))** | 11A | Maximum continuous current|
| **Technology** | SJ_Multi-EPI | Super junction and multi-layer epitaxial structure improve voltage and efficiency|
| **Operating temperature** | -55°C ~ 150°C | Suitable for application environments with a wide temperature range|
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| Parameter | Value | Description|
|---------------------|--------------------------------|--------------------------------|
| **Package** | TO-251 | Suitable for high voltage and high current applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET |
| **Drain-source voltage (V\(_{DS}\))** | 800V | Support high voltage applications|
| **Gate-source voltage (V\(_{GS}\))** | ±30V | Gate voltage tolerance range|
| **Turning voltage (V\(_{th}\))** | 3.5V | Gate drive voltage turn-on threshold|
| **On-resistance (R\(_{DS(on)}\))** | 500mΩ @ V\(_{GS}\)=10V | On-state impedance affects efficiency and heat dissipation|
| **Drain current (I\(_{D}\))** | 11A | Maximum continuous current|
| **Technology** | SJ_Multi-EPI | Super junction and multi-layer epitaxial structure improve voltage and efficiency|
| **Operating temperature** | -55°C ~ 150°C | Suitable for application environments with a wide temperature range|
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Domain and module applications：
3. NCE80T560I-VB Applications and Module Examples
1. **High-voltage power supply module**
NCE80T560I-VB is suitable for high-voltage DC power supply and AC power supply modules, such as power adapters, industrial power supplies, and communication equipment power supplies. The 800V withstand voltage characteristics of this MOSFET ensure stability in high-voltage environments and reduce energy losses through low on-resistance.
2. **LED driver power supply**
In high-power LED lighting applications, such as street lighting and outdoor lighting, the device can effectively handle the high voltage of the power drive, improve the energy efficiency of the system, and extend the service life of LED lamps.
3. **Motor drive control**
NCE80T560I-VB is very effective in motor drive systems, especially in electric vehicles, servo motors, and industrial automation. Its 11A drain current and high withstand voltage capability ensure reliable control and high efficiency of the motor.
4. **Photovoltaic Inverter**
In the inverter of photovoltaic power generation system, NCE80T560I-VB can handle high voltage input and effectively convert DC to AC, improve the overall conversion efficiency of the inverter and reduce heat generation.
5. **Uninterruptible Power Supply (UPS) System**
This MOSFET plays an important role in UPS system and power conversion module to ensure stable power output in the event of power failure. Its high voltage and high efficiency make it an ideal choice for these applications.
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The high withstand voltage, high efficiency and excellent conduction characteristics of NCE80T560I-VB make it excel in various power electronics applications, effectively improving equipment performance and ensuring long-term reliable operation.
1. **High-voltage power supply module**
NCE80T560I-VB is suitable for high-voltage DC power supply and AC power supply modules, such as power adapters, industrial power supplies, and communication equipment power supplies. The 800V withstand voltage characteristics of this MOSFET ensure stability in high-voltage environments and reduce energy losses through low on-resistance.
2. **LED driver power supply**
In high-power LED lighting applications, such as street lighting and outdoor lighting, the device can effectively handle the high voltage of the power drive, improve the energy efficiency of the system, and extend the service life of LED lamps.
3. **Motor drive control**
NCE80T560I-VB is very effective in motor drive systems, especially in electric vehicles, servo motors, and industrial automation. Its 11A drain current and high withstand voltage capability ensure reliable control and high efficiency of the motor.
4. **Photovoltaic Inverter**
In the inverter of photovoltaic power generation system, NCE80T560I-VB can handle high voltage input and effectively convert DC to AC, improve the overall conversion efficiency of the inverter and reduce heat generation.
5. **Uninterruptible Power Supply (UPS) System**
This MOSFET plays an important role in UPS system and power conversion module to ensure stable power output in the event of power failure. Its high voltage and high efficiency make it an ideal choice for these applications.
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The high withstand voltage, high efficiency and excellent conduction characteristics of NCE80T560I-VB make it excel in various power electronics applications, effectively improving equipment performance and ensuring long-term reliable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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