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NCE80T560F-VB Product details
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1. NCE80T560F-VB Product Introduction
NCE80T560F-VB is a high-performance N-channel power MOSFET in a **TO-220F** package, specially designed for high-voltage switching and power applications. Its rated **800V** drain-source voltage (VDS) and ±30V gate-source voltage (VGS) enable it to operate stably in a high-voltage environment. The device uses **SJ (Super Junction) multi-layer EPI technology**, has excellent on-resistance (RDS(ON)), provides higher efficiency and lower energy loss, and is very suitable for applications with high energy efficiency requirements.
NCE80T560F-VB is a high-performance N-channel power MOSFET in a **TO-220F** package, specially designed for high-voltage switching and power applications. Its rated **800V** drain-source voltage (VDS) and ±30V gate-source voltage (VGS) enable it to operate stably in a high-voltage environment. The device uses **SJ (Super Junction) multi-layer EPI technology**, has excellent on-resistance (RDS(ON)), provides higher efficiency and lower energy loss, and is very suitable for applications with high energy efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-220F | Provides good heat dissipation and mechanical strength|
| **Configuration** | Single N-channel | Single N-channel MOSFET, can be used in a variety of switch configurations|
| **Drain-source voltage (VDS)** | 800V | Suitable for high-voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate drive voltage, suitable for a variety of control circuits|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 370 mΩ @ VGS=10V | Lower on-resistance, effectively reducing power consumption|
| **Maximum drain current (ID)** | 15A | Suitable for applications with medium current requirements |
| **Technology** | SJ_Multi-EPI | Superjunction multi-layer EPI technology improves voltage tolerance and switching performance |
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-220F | Provides good heat dissipation and mechanical strength|
| **Configuration** | Single N-channel | Single N-channel MOSFET, can be used in a variety of switch configurations|
| **Drain-source voltage (VDS)** | 800V | Suitable for high-voltage power supply and switching applications|
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate drive voltage, suitable for a variety of control circuits|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required to turn on the MOSFET|
| **On-resistance (RDS(ON))** | 370 mΩ @ VGS=10V | Lower on-resistance, effectively reducing power consumption|
| **Maximum drain current (ID)** | 15A | Suitable for applications with medium current requirements |
| **Technology** | SJ_Multi-EPI | Superjunction multi-layer EPI technology improves voltage tolerance and switching performance |
Domain and module applications：
III. Application fields and module examples
1. **Power converter**
NCE80T560F-VB can be used in **switching power supplies (SMPS)** and **DC-DC converters** to achieve efficient energy conversion in high-voltage environments, especially suitable for power supply of computers and industrial equipment. Its low on-resistance helps reduce system heat loss and improve overall efficiency.
2. **Solar inverter**
In photovoltaic inverters, this MOSFET can be used as the core switch of **DC-AC conversion**, which can handle the high voltage output of solar panels, ensure efficient conversion and improve system reliability.
3. **Lighting control system**
In high-voltage LED lighting systems, NCE80T560F-VB can be used as a switching element of the **drive circuit**, capable of handling voltages up to 800V, suitable for a variety of commercial and industrial lighting applications.
4. **Motor control**
In high-voltage motor drive systems, this MOSFET can be used in **inverters** and **servo drives** to improve the performance and efficiency of motor control through its high-voltage capability and fast switching characteristics.
Through these application examples, the NCE80T560F-VB proves its importance in a variety of power electronic systems, providing excellent performance under high voltage and low loss conditions.
1. **Power converter**
NCE80T560F-VB can be used in **switching power supplies (SMPS)** and **DC-DC converters** to achieve efficient energy conversion in high-voltage environments, especially suitable for power supply of computers and industrial equipment. Its low on-resistance helps reduce system heat loss and improve overall efficiency.
2. **Solar inverter**
In photovoltaic inverters, this MOSFET can be used as the core switch of **DC-AC conversion**, which can handle the high voltage output of solar panels, ensure efficient conversion and improve system reliability.
3. **Lighting control system**
In high-voltage LED lighting systems, NCE80T560F-VB can be used as a switching element of the **drive circuit**, capable of handling voltages up to 800V, suitable for a variety of commercial and industrial lighting applications.
4. **Motor control**
In high-voltage motor drive systems, this MOSFET can be used in **inverters** and **servo drives** to improve the performance and efficiency of motor control through its high-voltage capability and fast switching characteristics.
Through these application examples, the NCE80T560F-VB proves its importance in a variety of power electronic systems, providing excellent performance under high voltage and low loss conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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