NCE80T420D-VB Product details
Product introduction:
NCE80T420D-VB is a high voltage, single N-channel MOSFET in a TO-263 package with excellent power handling capability and reliability. Its drain-source voltage (V\(_{DS}\)) is 800V and the gate-source voltage (V\(_{GS}\)) range is ±30V, making it suitable for applications that require high-voltage drive. The device has an on-resistance (R\(_{DS(ON)}\)) of 380mΩ@V\(_{GS}\)=10V and supports a maximum drain current of 15A. The use of super junction multi-epitaxial (SJ_Multi-EPI) technology can significantly reduce switching losses and improve power conversion efficiency, making it very suitable for applications such as solar inverters, power adapters and motor drives.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-263 | Compact package for high-power applications|
| **Channel type** | Single N-channel | Enhancement-mode MOSFET for high-voltage switch control|
| **V\(_{DS}\)** | 800V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 380mΩ (V\(_{GS}\)=10V) | On-state resistance|
| **I\(_D\)** | 15A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | Superjunction multi-epitaxial technology for improved energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide temperature range for harsh operating environments|
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Domain and module applications:
1. **Solar inverter**
NCE80T420D-VB can handle 800V high-voltage DC input and convert it to AC output in **PV system inverter**. Its low on-resistance and high power handling capability help improve inverter efficiency and reduce system power consumption and heat loss.
2. **High-voltage switching power supply**
This device is suitable for primary-side control of **switching power supply (SMPS)**, especially in industrial equipment and server power supplies, and can provide high efficiency and stability to ensure long-term reliable operation.
3. **Motor drive system**
In **industrial motor control** applications, NCE80T420D-VB supports large currents and withstands high voltage environments. It can be used in brushless DC motors (BLDC) and variable frequency drives to improve control accuracy and power conversion efficiency.
4. **Uninterruptible Power Supply (UPS)**
This MOSFET is used in high-voltage inverter and switching paths in **UPS systems** to ensure power stability and instantaneous response capabilities. In the event of a power outage, it can quickly switch to the backup battery to maintain power supply to critical equipment.
5. **Electric Vehicle Charging Pile**
In **New Energy Vehicle Charging Pile**, NCE80T420D-VB can be used for high-voltage rectification and power conversion modules, supporting 800V system voltage and providing an efficient and stable charging process.
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The high withstand voltage and low conduction loss of NCE80T420D-VB make it excellent in high-power applications. It is suitable for a variety of scenarios requiring high-voltage switching and efficient power conversion. It is an ideal choice in the industrial and new energy fields.
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