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NCE80T320T-VB Product details
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1. NCE80T320T-VB Product Introduction
NCE80T320T-VB is a high voltage single N-channel MOSFET in TO247 package, especially suitable for industrial-grade power conversion and power management applications. Its drain-source voltage (VDS) is up to 800V, and it supports a gate drive voltage (VGS) of ±30V, providing flexibility and reliability for high-voltage circuits. The threshold voltage (Vth) is 3.5V and the on-resistance (RDS(ON)) is 220mΩ @ VGS=10V, ensuring low-loss operation under high voltage. NCE80T320T-VB has a continuous drain current capability of 20A, suitable for high-power circuit design. Its SJ_Multi-EPI technology gives it superior voltage resistance and thermal performance, ensuring that the device operates stably under high frequency and high voltage conditions.
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NCE80T320T-VB is a high voltage single N-channel MOSFET in TO247 package, especially suitable for industrial-grade power conversion and power management applications. Its drain-source voltage (VDS) is up to 800V, and it supports a gate drive voltage (VGS) of ±30V, providing flexibility and reliability for high-voltage circuits. The threshold voltage (Vth) is 3.5V and the on-resistance (RDS(ON)) is 220mΩ @ VGS=10V, ensuring low-loss operation under high voltage. NCE80T320T-VB has a continuous drain current capability of 20A, suitable for high-power circuit design. Its SJ_Multi-EPI technology gives it superior voltage resistance and thermal performance, ensuring that the device operates stably under high frequency and high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. NCE80T320T-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|-------------------------------------------|
| **Package Type** | TO247 | Provides excellent heat dissipation performance and is suitable for high-power applications. |
| **Configuration** | Single N-channel | Commonly used in power conversion and high-voltage drive circuits. |
| **Drain-Source Voltage (VDS)** | 800V | Suitable for switching and inverter circuits in high-voltage environments. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to the driving requirements of various control circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Achieves stable conduction at moderate voltages. |
| **On-resistance (RDS(ON))** | 220mΩ @ VGS=10V | Reduces switching losses and improves efficiency. |
| **Maximum drain current (ID)** | 20A | Meets medium power requirements and is suitable for a variety of loads. |
| **Technology** | SJ_Multi-EPI | Improves withstand voltage and switching speed, and reduces conduction losses. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|-------------------------------------------|
| **Package Type** | TO247 | Provides excellent heat dissipation performance and is suitable for high-power applications. |
| **Configuration** | Single N-channel | Commonly used in power conversion and high-voltage drive circuits. |
| **Drain-Source Voltage (VDS)** | 800V | Suitable for switching and inverter circuits in high-voltage environments. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to the driving requirements of various control circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Achieves stable conduction at moderate voltages. |
| **On-resistance (RDS(ON))** | 220mΩ @ VGS=10V | Reduces switching losses and improves efficiency. |
| **Maximum drain current (ID)** | 20A | Meets medium power requirements and is suitable for a variety of loads. |
| **Technology** | SJ_Multi-EPI | Improves withstand voltage and switching speed, and reduces conduction losses. |
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Domain and module applications：
III. Application fields and module examples
1. **Solar inverter**
NCE80T320T-VB can play an important role in the inversion process of high-voltage DC to AC. Its 800V withstand voltage ensures stability and reliability under high voltage input, which is very suitable for inverter modules in photovoltaic systems.
2. **Industrial power management system**
This MOSFET is commonly used in high-voltage switching power supplies (SMPS) and UPS systems to support efficient power conversion and backup power switching. Its low RDS(ON) ensures energy efficiency and heat dissipation performance during system operation.
3. **Electric vehicle charging station**
In high-power charging piles, NCE80T320T-VB can control high-voltage current to ensure the safety and speed of electric vehicle charging process. Its TO247 package helps with heat dissipation management and improves the reliability of the charging system.
4. **LED lighting system**
Suitable for high-voltage LED drivers, ensuring stable driving and long-term lighting in street lights and commercial lighting. The high voltage capability and low loss design of NCE80T320T-VB help reduce energy consumption in lighting systems.
5. **Wind power generation system**
In wind power inverter modules, this MOSFET can handle complex high-voltage conversions, improving system efficiency and reliability. Its fast switching performance supports stable control of dynamic loads and meets the needs of modern power systems.
The high voltage withstand capability and excellent electrical performance of NCE80T320T-VB make it an ideal choice for industrial power electronics, energy conversion and high-power drive fields.
1. **Solar inverter**
NCE80T320T-VB can play an important role in the inversion process of high-voltage DC to AC. Its 800V withstand voltage ensures stability and reliability under high voltage input, which is very suitable for inverter modules in photovoltaic systems.
2. **Industrial power management system**
This MOSFET is commonly used in high-voltage switching power supplies (SMPS) and UPS systems to support efficient power conversion and backup power switching. Its low RDS(ON) ensures energy efficiency and heat dissipation performance during system operation.
3. **Electric vehicle charging station**
In high-power charging piles, NCE80T320T-VB can control high-voltage current to ensure the safety and speed of electric vehicle charging process. Its TO247 package helps with heat dissipation management and improves the reliability of the charging system.
4. **LED lighting system**
Suitable for high-voltage LED drivers, ensuring stable driving and long-term lighting in street lights and commercial lighting. The high voltage capability and low loss design of NCE80T320T-VB help reduce energy consumption in lighting systems.
5. **Wind power generation system**
In wind power inverter modules, this MOSFET can handle complex high-voltage conversions, improving system efficiency and reliability. Its fast switching performance supports stable control of dynamic loads and meets the needs of modern power systems.
The high voltage withstand capability and excellent electrical performance of NCE80T320T-VB make it an ideal choice for industrial power electronics, energy conversion and high-power drive fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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