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NCE80T320D-VB Product details
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1. NCE80T320D-VB Product Introduction
NCE80T320D-VB is a **single-channel N-type MOSFET** in a **TO-263 package**. It has high voltage tolerance and good conduction performance, and is particularly suitable for industrial applications and power electronics systems that require high voltage control. The device has a **drain-source voltage (VDS) of 800V**, a **gate drive voltage (VGS) range of ±30V**, an on-resistance as low as **160mΩ @ VGS=10V**, and supports a drain current of up to **20A**. It uses a **super junction (SJ) multi-epitaxial process (Multi-EPI)** to improve current handling capability while reducing power consumption and heat loss, making it excellent in switching speed and efficiency.
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NCE80T320D-VB is a **single-channel N-type MOSFET** in a **TO-263 package**. It has high voltage tolerance and good conduction performance, and is particularly suitable for industrial applications and power electronics systems that require high voltage control. The device has a **drain-source voltage (VDS) of 800V**, a **gate drive voltage (VGS) range of ±30V**, an on-resistance as low as **160mΩ @ VGS=10V**, and supports a drain current of up to **20A**. It uses a **super junction (SJ) multi-epitaxial process (Multi-EPI)** to improve current handling capability while reducing power consumption and heat loss, making it excellent in switching speed and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NCE80T320D-VB Detailed Parameter Description
| **Parameter** | **Specification** | **Description** |
|----------------------|--------------------------------|---------------------------------------------|
| **Device Type** | N-Channel MOSFET | Single-channel N-type field effect transistor|
| **Package Type** | TO-263 | Provides excellent heat dissipation performance, suitable for high-power applications|
| **Drain-Source Voltage (VDS)** | 800V | Can withstand high voltage loads, suitable for power equipment and industrial systems|
| **Gate-Source Voltage (VGS)** | ±30V | Wide range of control signals, enhanced noise immunity|
| **Threshold Voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 160mΩ @ VGS=10V | Low on-resistance at specified voltage, reduced conduction loss|
| **Maximum drain current (ID)** | 20A | Can carry large current, suitable for high power applications|
| **Process technology** | SJ Multi-EPI | Super junction technology, improves conductivity and efficiency, reduces heat loss|
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| **Parameter** | **Specification** | **Description** |
|----------------------|--------------------------------|---------------------------------------------|
| **Device Type** | N-Channel MOSFET | Single-channel N-type field effect transistor|
| **Package Type** | TO-263 | Provides excellent heat dissipation performance, suitable for high-power applications|
| **Drain-Source Voltage (VDS)** | 800V | Can withstand high voltage loads, suitable for power equipment and industrial systems|
| **Gate-Source Voltage (VGS)** | ±30V | Wide range of control signals, enhanced noise immunity|
| **Threshold Voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 160mΩ @ VGS=10V | Low on-resistance at specified voltage, reduced conduction loss|
| **Maximum drain current (ID)** | 20A | Can carry large current, suitable for high power applications|
| **Process technology** | SJ Multi-EPI | Super junction technology, improves conductivity and efficiency, reduces heat loss|
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Domain and module applications：
3. Application fields and module examples
1. **PV Inverters**
NCE80T320D-VB can be used in inverter modules in photovoltaic systems. In these systems, it is responsible for **converting DC power into AC power**, and its high withstand voltage of 800V ensures that the device can operate stably under high input voltage. In addition, its low on-resistance can reduce energy loss and improve conversion efficiency.
2. **Switching Power Supply (SMPS) and High Voltage Power Supply Modules**
In switching power supply modules, this device is suitable for high voltage input power supply design, such as industrial and telecommunication equipment power supplies, due to its **super junction multi-epitaxial process** and high voltage withstand capability. Low RDS(ON) can reduce losses during conduction and improve the efficiency of the entire system.
3. **EV Chargers**
The NCE80T320D-VB is suitable for **high-voltage DC-DC conversion modules** and PFC (power factor correction) circuits in EV chargers. In these modules, the MOSFET needs to handle input voltages of hundreds of volts, and the device's high VDS value ensures reliable operation under harsh conditions.
4. **Motor Control and Industrial Automation**
In industrial automation and motor control systems, the device can be used in **high-voltage drive circuits**, such as inverters and servo motor drive modules. Its 20A current handling capability ensures its stability in high-power motor applications.
5. **Uninterruptible Power Supply (UPS) Systems**
The NCE80T320D-VB can also be used in the inverter and conversion circuits of UPS systems to ensure **stable and efficient power switching** when the grid fluctuates or loses power.
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This MOSFET is suitable for fields that require high voltage resistance, high current handling capability, and focus on efficiency and power consumption control. It is widely used in photovoltaics, charging piles, power modules, industrial automation and other scenarios.
1. **PV Inverters**
NCE80T320D-VB can be used in inverter modules in photovoltaic systems. In these systems, it is responsible for **converting DC power into AC power**, and its high withstand voltage of 800V ensures that the device can operate stably under high input voltage. In addition, its low on-resistance can reduce energy loss and improve conversion efficiency.
2. **Switching Power Supply (SMPS) and High Voltage Power Supply Modules**
In switching power supply modules, this device is suitable for high voltage input power supply design, such as industrial and telecommunication equipment power supplies, due to its **super junction multi-epitaxial process** and high voltage withstand capability. Low RDS(ON) can reduce losses during conduction and improve the efficiency of the entire system.
3. **EV Chargers**
The NCE80T320D-VB is suitable for **high-voltage DC-DC conversion modules** and PFC (power factor correction) circuits in EV chargers. In these modules, the MOSFET needs to handle input voltages of hundreds of volts, and the device's high VDS value ensures reliable operation under harsh conditions.
4. **Motor Control and Industrial Automation**
In industrial automation and motor control systems, the device can be used in **high-voltage drive circuits**, such as inverters and servo motor drive modules. Its 20A current handling capability ensures its stability in high-power motor applications.
5. **Uninterruptible Power Supply (UPS) Systems**
The NCE80T320D-VB can also be used in the inverter and conversion circuits of UPS systems to ensure **stable and efficient power switching** when the grid fluctuates or loses power.
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This MOSFET is suitable for fields that require high voltage resistance, high current handling capability, and focus on efficiency and power consumption control. It is widely used in photovoltaics, charging piles, power modules, industrial automation and other scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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