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NCE80T1K2K-VB Product details
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1. NCE80T1K2K-VB Product Introduction
NCE80T1K2K-VB is a high-voltage N-channel power MOSFET in a **TO-252** package, designed for high-voltage switching applications. Its **800V** drain-source voltage (VDS) and ±30V gate-source voltage (VGS) make it suitable for high-voltage power transmission and conversion. The device uses **SJ (Super Junction) multi-layer EPI technology**, which significantly reduces the on-resistance (RDS(ON)) and improves energy efficiency while ensuring high-voltage tolerance.
NCE80T1K2K-VB is a high-voltage N-channel power MOSFET in a **TO-252** package, designed for high-voltage switching applications. Its **800V** drain-source voltage (VDS) and ±30V gate-source voltage (VGS) make it suitable for high-voltage power transmission and conversion. The device uses **SJ (Super Junction) multi-layer EPI technology**, which significantly reduces the on-resistance (RDS(ON)) and improves energy efficiency while ensuring high-voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-252 | Small size SMD package, suitable for high-density circuit design|
| **Configuration** | Single N-channel | Single N-channel MOSFET, can be used for low-side switch configuration|
| **Drain-source voltage (VDS)** | 800V | Supports high-voltage applications such as power supplies and lighting systems|
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate drive voltage for enhanced switching flexibility|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 1100 mΩ @ VGS=10V | Lower on-resistance, reduced power consumption, improved efficiency|
| **Maximum drain current (ID)** | 5A | Applications that meet medium current requirements|
| **Technology** | SJ_Multi-EPI | Superjunction multi-layer EPI technology improves voltage tolerance and switching performance|
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO-252 | Small size SMD package, suitable for high-density circuit design|
| **Configuration** | Single N-channel | Single N-channel MOSFET, can be used for low-side switch configuration|
| **Drain-source voltage (VDS)** | 800V | Supports high-voltage applications such as power supplies and lighting systems|
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate drive voltage for enhanced switching flexibility|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 1100 mΩ @ VGS=10V | Lower on-resistance, reduced power consumption, improved efficiency|
| **Maximum drain current (ID)** | 5A | Applications that meet medium current requirements|
| **Technology** | SJ_Multi-EPI | Superjunction multi-layer EPI technology improves voltage tolerance and switching performance|
Domain and module applications：
III. Application fields and module examples
1. **Lighting system**
In LED street lights and factory lighting, NCE80T1K2K-VB can be used as the main switch of the **drive circuit**. Its high withstand voltage of 800V ensures that the device works safely in a high-voltage grid environment, while the lower on-resistance reduces the power consumption in the circuit.
2. **Industrial power converter**
In industrial-grade power supplies and uninterruptible power supplies (UPS), this MOSFET can be used in **PFC (power factor correction) circuits** and high-voltage rectification circuits to improve energy efficiency and ensure stable power supply.
3. **Solar inverter**
In photovoltaic systems, NCE80T1K2K-VB can be used as a key component of **DC-AC conversion modules**. Its high voltage and low conduction loss characteristics make it suitable for handling the high voltage output of solar panels in inverters.
4. **Switching Power Supply (SMPS)**
This device is suitable for use as a **high-voltage primary switch tube** to ensure efficient energy conversion, especially for power modules of household appliances and communication equipment.
NCE80T1K2K-VB is widely used in various modules and devices in the field of power electronics through its excellent high-voltage performance and low loss performance, providing reliable support for efficient energy conversion and stable operation.
1. **Lighting system**
In LED street lights and factory lighting, NCE80T1K2K-VB can be used as the main switch of the **drive circuit**. Its high withstand voltage of 800V ensures that the device works safely in a high-voltage grid environment, while the lower on-resistance reduces the power consumption in the circuit.
2. **Industrial power converter**
In industrial-grade power supplies and uninterruptible power supplies (UPS), this MOSFET can be used in **PFC (power factor correction) circuits** and high-voltage rectification circuits to improve energy efficiency and ensure stable power supply.
3. **Solar inverter**
In photovoltaic systems, NCE80T1K2K-VB can be used as a key component of **DC-AC conversion modules**. Its high voltage and low conduction loss characteristics make it suitable for handling the high voltage output of solar panels in inverters.
4. **Switching Power Supply (SMPS)**
This device is suitable for use as a **high-voltage primary switch tube** to ensure efficient energy conversion, especially for power modules of household appliances and communication equipment.
NCE80T1K2K-VB is widely used in various modules and devices in the field of power electronics through its excellent high-voltage performance and low loss performance, providing reliable support for efficient energy conversion and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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