NCE80T1K2F-VB Product details
Product introduction:
NCE80T1K2F-VB is a high-voltage unipolar N-channel MOSFET in TO220F package, designed for high voltage and medium and low current applications. The device supports drain-source voltage (VDS) up to 800V and gate-source voltage (VGS) of ±30V, enabling stable operation under harsh high-voltage conditions. Its threshold voltage (Vth) is 3.5V, which can ensure reliable conduction over a wide range of input voltages. Because the MOSFET uses **Super Junction (Super Junction) and multi-layer epitaxial (Multi-EPI)** technology, it has the characteristics of low switching losses. The on-resistance (RDS(ON)) is 1100mΩ (VGS = 10V), which is suitable for high-voltage power systems and control modules that require high efficiency and stability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Product model**: NCE80T1K2F-VB
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Super Junction (SJ) and Multi-EPI technology
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Domain and module applications:
NCE80T1K2F-VB MOSFET has demonstrated excellent performance in high voltage and current control applications. Its application fields and module examples are as follows:
1. **Power converters and high-voltage inverters**
- Due to the high drain-source voltage capability of 800V, it can be used in **AC-DC converters (AC-DC)** and **high-voltage inverters** to improve conversion efficiency and meet the stable power supply requirements of power equipment.
2. **Industrial motor drive**
- In industrial control systems, it can be used as the core switching element of **high-voltage motor drive modules** for current regulation and speed control of medium and low power equipment.
3. **Smart meters and energy management systems**
- NCE80T1K2F-VB is very suitable for smart meters and energy monitoring systems to achieve accurate monitoring and control of current and voltage while reducing switching losses.
4. **Lighting equipment driver**
- Suitable for **LED driver circuit** and **high-voltage HID lamp** switch control, ensuring stable operation of lighting system and reducing energy loss.
5. **Renewable energy equipment**
- In the high-voltage grid-connected inverter of solar or wind power generation system, NCE80T1K2F-VB can help achieve efficient energy transmission and ensure stable operation of energy equipment in harsh environment.
Through these example applications, NCE80T1K2F-VB demonstrates its importance in the field of high-voltage power supply and energy management, providing efficient and stable solutions for modern industrial and energy systems.
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