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NCE80R900F-VB Product details
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1. NCE80R900F-VB Product Introduction
NCE80R900F-VB is a high-voltage, high-efficiency single N-channel MOSFET in a **TO-220F package**, designed to meet the needs of high-power applications. The **maximum drain-source voltage (V\(_{DS}\))** of this MOSFET is up to **800V**, suitable for power management and switching applications requiring higher voltages. Its **maximum gate-source voltage (V\(_{GS}\))** is **±30V**, allowing the device to operate stably under a variety of operating conditions. With a **threshold voltage (V\(_{th}\))** of **3.5V, it can be effectively turned on even at low gate voltages. In addition, at VGS = 10V, its on-resistance (RDS(ON)) is only 770mΩ, supporting a continuous drain current of 7A. Using SJ Multi-EPI technology, this MOSFET provides excellent on-state performance and low power consumption, making it ideal for high-efficiency power supplies and high-power drive circuits.
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NCE80R900F-VB is a high-voltage, high-efficiency single N-channel MOSFET in a **TO-220F package**, designed to meet the needs of high-power applications. The **maximum drain-source voltage (V\(_{DS}\))** of this MOSFET is up to **800V**, suitable for power management and switching applications requiring higher voltages. Its **maximum gate-source voltage (V\(_{GS}\))** is **±30V**, allowing the device to operate stably under a variety of operating conditions. With a **threshold voltage (V\(_{th}\))** of **3.5V, it can be effectively turned on even at low gate voltages. In addition, at VGS = 10V, its on-resistance (RDS(ON)) is only 770mΩ, supporting a continuous drain current of 7A. Using SJ Multi-EPI technology, this MOSFET provides excellent on-state performance and low power consumption, making it ideal for high-efficiency power supplies and high-power drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NCE80R900F-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-220F | Standard package for high power applications|
| **Channel type** | Single N-channel | Enhancement mode MOSFET, suitable for switch control|
| **V\(_{DS}\)** | 800V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 770mΩ (V\(_{GS}\) = 10V) | Drain-source resistance at high gate voltage|
| **I\(_D\)** | 7A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | Multi-junction technology for improved performance and energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Adaptable to various complex working environments|
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| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-220F | Standard package for high power applications|
| **Channel type** | Single N-channel | Enhancement mode MOSFET, suitable for switch control|
| **V\(_{DS}\)** | 800V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 770mΩ (V\(_{GS}\) = 10V) | Drain-source resistance at high gate voltage|
| **I\(_D\)** | 7A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | Multi-junction technology for improved performance and energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Adaptable to various complex working environments|
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Domain and module applications：
III. Applicable fields and module application examples
1. **High-voltage power converter**
NCE80R900F-VB performs well in **high-voltage power converter** and is suitable for high-voltage DC-DC conversion and power adapters. It can effectively reduce power consumption and improve system efficiency, meeting the high-efficiency requirements of power supply design.
2. **Power electronic equipment**
This MOSFET can be widely used in **power electronic equipment**, such as uninterruptible power supplies (UPS) and motor drives, providing stable switching performance under high voltage and high current environments.
3. **Industrial control system**
In **industrial automation control** systems, NCE80R900F-VB can be used for high-power switching and motor control to achieve efficient energy transmission, improve production efficiency and system reliability.
4. **LED driver**
Applicable to **LED lighting** driver power supply, which can provide stable current output at higher voltage, ensure the light efficiency and service life of LEDs, and reduce energy consumption at the same time.
5. **Solar Inverters**
NCE80R900F-VB can also be used in **Solar Inverters**, which can handle high voltage DC input and convert it into AC power suitable for home or industrial use, improving the overall energy efficiency of the system.
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NCE80R900F-VB is a high efficiency and high reliability MOSFET, which is widely used in power management and switch control fields, providing strong performance support for modern electronic devices.
1. **High-voltage power converter**
NCE80R900F-VB performs well in **high-voltage power converter** and is suitable for high-voltage DC-DC conversion and power adapters. It can effectively reduce power consumption and improve system efficiency, meeting the high-efficiency requirements of power supply design.
2. **Power electronic equipment**
This MOSFET can be widely used in **power electronic equipment**, such as uninterruptible power supplies (UPS) and motor drives, providing stable switching performance under high voltage and high current environments.
3. **Industrial control system**
In **industrial automation control** systems, NCE80R900F-VB can be used for high-power switching and motor control to achieve efficient energy transmission, improve production efficiency and system reliability.
4. **LED driver**
Applicable to **LED lighting** driver power supply, which can provide stable current output at higher voltage, ensure the light efficiency and service life of LEDs, and reduce energy consumption at the same time.
5. **Solar Inverters**
NCE80R900F-VB can also be used in **Solar Inverters**, which can handle high voltage DC input and convert it into AC power suitable for home or industrial use, improving the overall energy efficiency of the system.
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NCE80R900F-VB is a high efficiency and high reliability MOSFET, which is widely used in power management and switch control fields, providing strong performance support for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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