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NCE80R1K2I-VB Product details
Back to previous pageProduct introduction：
1. NCE80R1K2I-VB Product Introduction
NCE80R1K2I-VB is a high-performance single N-channel power MOSFET in a TO-251 package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (V_DS) of 800V, which can meet the needs of many industrial and commercial applications. Supporting a gate-source voltage (V_GS) of ±30V, its gate threshold voltage (V_th) is 3.5V, ensuring reliable switching performance. The on-resistance (R_DS(ON)) of the NCE80R1K2I-VB is 1100mΩ at V_GS = 10V, making it exhibit good efficiency in high voltage applications. The maximum drain current (I_D) is 5A, suitable for a variety of power management and conversion applications. With its SJ_Multi-EPI technology, the NCE80R1K2I-VB provides excellent thermal performance and switching characteristics, suitable for power supply designs with high reliability requirements.
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NCE80R1K2I-VB is a high-performance single N-channel power MOSFET in a TO-251 package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (V_DS) of 800V, which can meet the needs of many industrial and commercial applications. Supporting a gate-source voltage (V_GS) of ±30V, its gate threshold voltage (V_th) is 3.5V, ensuring reliable switching performance. The on-resistance (R_DS(ON)) of the NCE80R1K2I-VB is 1100mΩ at V_GS = 10V, making it exhibit good efficiency in high voltage applications. The maximum drain current (I_D) is 5A, suitable for a variety of power management and conversion applications. With its SJ_Multi-EPI technology, the NCE80R1K2I-VB provides excellent thermal performance and switching characteristics, suitable for power supply designs with high reliability requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. NCE80R1K2I-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|-------------------------------|
| **Package** | TO-251 | Compact package for high voltage applications|
| **Channel type** | Single N-channel | Efficient power switch solution|
| **Drain-source voltage (V_DS)** | 800V | Suitable for high voltage power management|
| **Gate-source voltage (V_GS)** | ±30V | Adaptable to a variety of drive signals|
| **Turning voltage (V_th)** | 3.5V | Threshold voltage to ensure reliable switching operation|
| **On-resistance (R_DS(ON))** | 1100mΩ @ V_GS=10V | Provides low loss under high voltage conditions|
| **Maximum drain current (I_D)** | 5A | Supports medium current applications|
| **Technology** | SJ_Multi-EPI | Improves efficiency and reduces switching losses|
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| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|-------------------------------|
| **Package** | TO-251 | Compact package for high voltage applications|
| **Channel type** | Single N-channel | Efficient power switch solution|
| **Drain-source voltage (V_DS)** | 800V | Suitable for high voltage power management|
| **Gate-source voltage (V_GS)** | ±30V | Adaptable to a variety of drive signals|
| **Turning voltage (V_th)** | 3.5V | Threshold voltage to ensure reliable switching operation|
| **On-resistance (R_DS(ON))** | 1100mΩ @ V_GS=10V | Provides low loss under high voltage conditions|
| **Maximum drain current (I_D)** | 5A | Supports medium current applications|
| **Technology** | SJ_Multi-EPI | Improves efficiency and reduces switching losses|
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Domain and module applications：
III. Application fields and module examples
1. **Power management system**
- NCE80R1K2I-VB can be widely used in **switching power supplies (SMPS)** and **DC-DC converters**. Its high voltage tolerance and low on-resistance characteristics make it very suitable for efficient power conversion and management, which can significantly reduce energy loss.
2. **Industrial control equipment**
- This MOSFET can be used in various **motor drivers** and **inverters** to provide efficient power control in the field of industrial automation, supporting stable current and high load requirements.
3. **Electric vehicles**
- In the power system of electric vehicles and hybrid vehicles, NCE80R1K2I-VB can act as a power switch to regulate the energy transfer between the battery and the motor, ensuring efficient operation of the system and extending the endurance.
4. **Renewable Energy Systems**
- The device is suitable for **solar inverters** and other renewable energy solutions, maintaining stable performance under high voltage conditions to help optimize energy conversion efficiency.
5. **LED Driver**
- NCE80R1K2I-VB can also be used for high-power **LED drivers**, providing efficient power management for lighting solutions, ensuring higher light output and energy efficiency.
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With its superior performance and high voltage carrying capacity, NCE80R1K2I-VB is an ideal choice for high voltage power management and industrial applications. It is widely used in multiple fields to meet the strict requirements of energy efficiency and stability.
1. **Power management system**
- NCE80R1K2I-VB can be widely used in **switching power supplies (SMPS)** and **DC-DC converters**. Its high voltage tolerance and low on-resistance characteristics make it very suitable for efficient power conversion and management, which can significantly reduce energy loss.
2. **Industrial control equipment**
- This MOSFET can be used in various **motor drivers** and **inverters** to provide efficient power control in the field of industrial automation, supporting stable current and high load requirements.
3. **Electric vehicles**
- In the power system of electric vehicles and hybrid vehicles, NCE80R1K2I-VB can act as a power switch to regulate the energy transfer between the battery and the motor, ensuring efficient operation of the system and extending the endurance.
4. **Renewable Energy Systems**
- The device is suitable for **solar inverters** and other renewable energy solutions, maintaining stable performance under high voltage conditions to help optimize energy conversion efficiency.
5. **LED Driver**
- NCE80R1K2I-VB can also be used for high-power **LED drivers**, providing efficient power management for lighting solutions, ensuring higher light output and energy efficiency.
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With its superior performance and high voltage carrying capacity, NCE80R1K2I-VB is an ideal choice for high voltage power management and industrial applications. It is widely used in multiple fields to meet the strict requirements of energy efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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