中文
English
NCE80R1K2F-VB Product details
Back to previous pageProduct introduction：
1. NCE80R1K2F-VB Product Introduction
NCE80R1K2F-VB is a high-performance single-channel N-type MOSFET in a **TO-220F package**, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach **850V**, which is suitable for various high-voltage power electronic circuits. The gate voltage (VGS) of this product is rated at ±30V to ensure its stability under different voltage conditions. The turn-on threshold voltage (Vth) of NCE80R1K2F-VB is **3.3V**, and the on-resistance (RDS(ON)) is **1150mΩ** at **VGS = 10V**, and it can withstand a drain current (ID) of up to **10A**. This MOSFET uses **Plannar technology** to provide stable performance and reliable thermal management, suitable for high-efficiency switching power supplies and other high-voltage applications.
---
NCE80R1K2F-VB is a high-performance single-channel N-type MOSFET in a **TO-220F package**, designed for high-voltage applications. Its maximum drain-source voltage (VDS) can reach **850V**, which is suitable for various high-voltage power electronic circuits. The gate voltage (VGS) of this product is rated at ±30V to ensure its stability under different voltage conditions. The turn-on threshold voltage (Vth) of NCE80R1K2F-VB is **3.3V**, and the on-resistance (RDS(ON)) is **1150mΩ** at **VGS = 10V**, and it can withstand a drain current (ID) of up to **10A**. This MOSFET uses **Plannar technology** to provide stable performance and reliable thermal management, suitable for high-efficiency switching power supplies and other high-voltage applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NCE80R1K2F-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-220F | Suitable for applications with high power and high heat dissipation requirements|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 850V | High voltage applications, suitable for power electronic equipment|
| **Gate-Source Voltage (VGS)** | ±30V | Provides sufficient control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.3V | When the gate voltage exceeds this value, the MOSFET turns on|
| **On-Resistance (RDS(ON))** | 1150mΩ @ VGS = 10V | Suitable for high current and high voltage applications with reasonable power consumption|
| **Drain Current (ID)** | 10A | Capable of handling higher current loads|
| **Technology** | Plannar | Provides stable performance, suitable for high voltage applications|
| **Operating Temperature Range** | -55°C ~ +150°C | Maintains stable performance in extreme temperatures|
---
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-220F | Suitable for applications with high power and high heat dissipation requirements|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 850V | High voltage applications, suitable for power electronic equipment|
| **Gate-Source Voltage (VGS)** | ±30V | Provides sufficient control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.3V | When the gate voltage exceeds this value, the MOSFET turns on|
| **On-Resistance (RDS(ON))** | 1150mΩ @ VGS = 10V | Suitable for high current and high voltage applications with reasonable power consumption|
| **Drain Current (ID)** | 10A | Capable of handling higher current loads|
| **Technology** | Plannar | Provides stable performance, suitable for high voltage applications|
| **Operating Temperature Range** | -55°C ~ +150°C | Maintains stable performance in extreme temperatures|
---
Domain and module applications：
III. Applicable fields and application modules of NCE80R1K2F-VB
1. **High-voltage switching power supply**
NCE80R1K2F-VB is widely used in **switching power supply** (SMPS), especially in applications that need to handle high input voltage. Its high drain-source voltage capability enables it to work stably under high voltage conditions and provide reliable power conversion.
2. **Electric vehicle power management system**
This MOSFET is suitable for the energy management and power system of **electric vehicles**, and can efficiently control motors and battery charging to ensure efficient and safe power transmission.
3. **Industrial automation**
NCE80R1K2F-VB is suitable for **industrial equipment**, such as **motor control** and **servo systems**, which can withstand high currents and provide precise power management to adapt to complex working environments.
4. **LED driver**
In addition, this MOSFET is also suitable for **high-power LED drivers**, providing stable current while minimizing energy loss and extending the life of the LED.
---
With its high voltage carrying capacity, low on-resistance and excellent thermal management performance, NCE80R1K2F-VB has become an important choice in high-voltage switching power supplies, electric vehicles, power management and industrial automation. Its **Plannar technology** ensures stability and reliability in various application environments, and is a key component in modern power electronics design.
1. **High-voltage switching power supply**
NCE80R1K2F-VB is widely used in **switching power supply** (SMPS), especially in applications that need to handle high input voltage. Its high drain-source voltage capability enables it to work stably under high voltage conditions and provide reliable power conversion.
2. **Electric vehicle power management system**
This MOSFET is suitable for the energy management and power system of **electric vehicles**, and can efficiently control motors and battery charging to ensure efficient and safe power transmission.
3. **Industrial automation**
NCE80R1K2F-VB is suitable for **industrial equipment**, such as **motor control** and **servo systems**, which can withstand high currents and provide precise power management to adapt to complex working environments.
4. **LED driver**
In addition, this MOSFET is also suitable for **high-power LED drivers**, providing stable current while minimizing energy loss and extending the life of the LED.
---
With its high voltage carrying capacity, low on-resistance and excellent thermal management performance, NCE80R1K2F-VB has become an important choice in high-voltage switching power supplies, electric vehicles, power management and industrial automation. Its **Plannar technology** ensures stability and reliability in various application environments, and is a key component in modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
