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NCE80H16WD-VB Product details
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**NCE80H16WD-VB Product Introduction**
NCE80H16WD-VB is a high-efficiency single N-channel MOSFET in a **TO-263 package**, designed for high current and low on-resistance applications. Its **80V drain-source voltage (VDS)** and **230A continuous drain current (ID)** enable it to excel in multiple fields, especially in power management, drive circuits, and motor control. NCE80H16WD-VB's **Trench technology** provides extremely low on-resistance, ensuring excellent performance and energy efficiency under high load conditions, making it an ideal choice for power electronics systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | 3.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description**
| Parameter | Value | Description |
|-----------------------|---------------------------------|----------------------------|
| **Package** | TO-263 | Provides good heat dissipation performance, suitable for high power applications|
| **Configuration** | Single-N-Channel | Simplifies circuit design and improves control efficiency|
| **Drain-source voltage (VDS)** | 80V | Suitable for medium voltage applications, providing reliability|
| **Gate-source voltage (VGS)** | ±20V | Suitable for a variety of gate drive circuits|
| **Turning voltage (Vth)** | 3V | Ensure reliable turn-on and turn-off performance|
| **On-resistance (RDS(ON))**| 3.1mΩ @ VGS=10V | Lower conduction loss, suitable for high-performance applications|
| **Continuous drain current (ID)** | 230A | Supports high-load applications|
| **Technology** | Trench | Improve current carrying capacity and reduce losses|
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Domain and module applications：
**Application fields and module examples**
1. **Power conversion**
NCE80H16WD-VB performs well in **high-efficiency switching power supplies (SMPS)** and **DC-DC converters**. Its extremely low on-resistance significantly reduces power consumption and improves power efficiency during high current transmission, making it particularly suitable for high-load applications such as industrial power supplies and server power supplies.
2. **Motor control**
This MOSFET is ideal for **motor drive systems** such as power tools and automation equipment. Its high current handling capability and fast switching characteristics enable the motor to achieve excellent performance during starting and speed regulation, meeting the needs of industrial and household appliances.
3. **Battery management system**
NCE80H16WD-VB is also widely used in **battery charge and discharge management**, especially in electric vehicles and energy storage systems, where low conduction losses can improve charge and discharge efficiency, extend battery life, and enhance overall performance.
4. **LED lighting driver**
This device also performs well in **high-power LED lighting systems**, and can efficiently drive high-power LEDs, provide stable current, and ensure high efficiency and reliability of LEDs under various working conditions, which is suitable for commercial and industrial lighting applications.
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**Summary**: NCE80H16WD-VB is a high-performance N-channel MOSFET, which is widely used in **power management, motor control, battery management** and **LED lighting**. With its **80V voltage tolerance** and **Trench technology**, the device provides excellent energy efficiency and reliability, and is an ideal choice for high-power electronic devices.
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