中文
English
NCE80H11D-VB Product details
Back to previous pageProduct introduction：
1. NCE80H11D-VB Product Introduction
NCE80H11D-VB is a high-performance **single N-channel MOSFET**, using **TO263 package**, designed for high current and high-efficiency applications. The device has **80V** drain-source voltage (VDS), supports **±20V gate-source voltage (VGS)**, and a threshold voltage (Vth) of **3V**. The **on-resistance (RDS(ON))** of NCE80H11D-VB is only **6mΩ** at VGS = 10V and **10mΩ** at VGS = 4.5V, showing extremely low conduction losses and a maximum continuous drain current (ID) of **120A**. Based on **Trench technology**, this MOSFET excels in switching speed and thermal performance, ensuring reliability and stability under high load conditions.
---
NCE80H11D-VB is a high-performance **single N-channel MOSFET**, using **TO263 package**, designed for high current and high-efficiency applications. The device has **80V** drain-source voltage (VDS), supports **±20V gate-source voltage (VGS)**, and a threshold voltage (Vth) of **3V**. The **on-resistance (RDS(ON))** of NCE80H11D-VB is only **6mΩ** at VGS = 10V and **10mΩ** at VGS = 4.5V, showing extremely low conduction losses and a maximum continuous drain current (ID) of **120A**. Based on **Trench technology**, this MOSFET excels in switching speed and thermal performance, ensuring reliability and stability under high load conditions.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of NCE80H11D-VB
| **Parameter** | **Description** | **Value** |
|---------------------|--------------------------|------------------------|
| **Package type** | TO263 | Suitable for high power applications, good heat dissipation performance|
| **Configuration** | Single N-channel MOSFET | Single channel switch control|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 80V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±20V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 10V| 6mΩ |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 4.5V| 10mΩ |
| **Continuous Drain Current (ID)** | Maximum Current Carrying Capacity| 120A |
| **Technology Type** | Trench Technology| Improved Switching Efficiency and Thermal Performance|
| **Operating Temperature Range** | -55°C ~ +150°C | Wide Temperature Range|
---
| **Parameter** | **Description** | **Value** |
|---------------------|--------------------------|------------------------|
| **Package type** | TO263 | Suitable for high power applications, good heat dissipation performance|
| **Configuration** | Single N-channel MOSFET | Single channel switch control|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 80V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±20V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 10V| 6mΩ |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 4.5V| 10mΩ |
| **Continuous Drain Current (ID)** | Maximum Current Carrying Capacity| 120A |
| **Technology Type** | Trench Technology| Improved Switching Efficiency and Thermal Performance|
| **Operating Temperature Range** | -55°C ~ +150°C | Wide Temperature Range|
---
Domain and module applications：
3. Application fields and typical module examples
1. **Switching Power Supply (SMPS)**
- NCE80H11D-VB is suitable for use as a high-efficiency switching element in switching power supply design. Its extremely low on-resistance helps reduce power consumption and improve power conversion efficiency, especially in AC-DC converters and DC-DC converters.
2. **Electric vehicle drive system**
- In the drive system of electric vehicles, this MOSFET can be used for motor control and battery management, supports high current and high voltage applications, improves the energy efficiency and endurance of electric vehicles, and is widely used in electric power steering and powertrain control.
3. **Power Management IC (PMIC)**
- NCE80H11D-VB can be used as a switching element in a power management integrated circuit, responsible for the switching control and distribution of power, providing a stable power supply for various electronic devices, while improving the overall energy efficiency of the system.
4. **LED lighting driver**
- This device is suitable for high-efficiency LED lighting driver circuits. It can accurately control the brightness and current of LED lighting to ensure efficient and stable light output. It is suitable for commercial and residential lighting.
5. **Industrial control and automation**
- In the field of industrial automation, NCE80H11D-VB can be used for high-current applications such as motor drive and servo control to meet the needs of industrial equipment for high efficiency and stability. It is widely used in industrial equipment such as robots and conveying systems.
---
NCE80H11D-VB is an ideal choice for **switching power supplies, electric vehicles, power management ICs, LED lighting drivers** and **industrial control** with its **high voltage, low conduction loss and high current carrying capacity**. Its **TO263 package** provides good heat dissipation performance to ensure stable operation in high-power applications.
1. **Switching Power Supply (SMPS)**
- NCE80H11D-VB is suitable for use as a high-efficiency switching element in switching power supply design. Its extremely low on-resistance helps reduce power consumption and improve power conversion efficiency, especially in AC-DC converters and DC-DC converters.
2. **Electric vehicle drive system**
- In the drive system of electric vehicles, this MOSFET can be used for motor control and battery management, supports high current and high voltage applications, improves the energy efficiency and endurance of electric vehicles, and is widely used in electric power steering and powertrain control.
3. **Power Management IC (PMIC)**
- NCE80H11D-VB can be used as a switching element in a power management integrated circuit, responsible for the switching control and distribution of power, providing a stable power supply for various electronic devices, while improving the overall energy efficiency of the system.
4. **LED lighting driver**
- This device is suitable for high-efficiency LED lighting driver circuits. It can accurately control the brightness and current of LED lighting to ensure efficient and stable light output. It is suitable for commercial and residential lighting.
5. **Industrial control and automation**
- In the field of industrial automation, NCE80H11D-VB can be used for high-current applications such as motor drive and servo control to meet the needs of industrial equipment for high efficiency and stability. It is widely used in industrial equipment such as robots and conveying systems.
---
NCE80H11D-VB is an ideal choice for **switching power supplies, electric vehicles, power management ICs, LED lighting drivers** and **industrial control** with its **high voltage, low conduction loss and high current carrying capacity**. Its **TO263 package** provides good heat dissipation performance to ensure stable operation in high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
