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NCE8060D-VB Product details
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1. NCE8060D-VB Product Introduction
NCE8060D-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage (V\(_{DS}\)) of 80V and supports a gate-source voltage (V\(_{GS}\)) of ±20V, making it ideal for power conversion and motor drive applications. NCE8060D-VB exhibits an on-resistance (R\(_{DS(on)}\)) as low as 6mΩ and a maximum drain current (I\(_D\)) of up to 120A at V\(_{GS}\)=10V, which greatly reduces switching losses and heat and improves the overall efficiency of the system. The device uses advanced Trench process technology, which enables it to exhibit excellent performance and reliability in high-load applications.
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NCE8060D-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage (V\(_{DS}\)) of 80V and supports a gate-source voltage (V\(_{GS}\)) of ±20V, making it ideal for power conversion and motor drive applications. NCE8060D-VB exhibits an on-resistance (R\(_{DS(on)}\)) as low as 6mΩ and a maximum drain current (I\(_D\)) of up to 120A at V\(_{GS}\)=10V, which greatly reduces switching losses and heat and improves the overall efficiency of the system. The device uses advanced Trench process technology, which enables it to exhibit excellent performance and reliability in high-load applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of NCE8060D-VB
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------------|-----------------------------------------|
| **Package type** | TO263 | Provides good heat dissipation performance|
| **Channel type** | Single N-channel | Single-channel MOSFET, suitable for high current applications|
| **Drain-source voltage V\(_{DS}\)** | 80V | Can withstand higher drain-source voltage|
| **Gate-source voltage V\(_{GS}\)** | ±20V | Enhanced anti-interference ability|
| **Threshold voltage V\(_{th}\)** | 3V | Minimum gate voltage required to turn on the MOSFET|
| **On-resistance R\(_{DS(on)}\)** | 6mΩ @ V\(_{GS}\)=10V | Lower conduction loss|
| **Drain current I\(_D\)** | 120A | High current handling capability|
| **Process technology** | Trench | Improved current density and heat dissipation|
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| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------------|-----------------------------------------|
| **Package type** | TO263 | Provides good heat dissipation performance|
| **Channel type** | Single N-channel | Single-channel MOSFET, suitable for high current applications|
| **Drain-source voltage V\(_{DS}\)** | 80V | Can withstand higher drain-source voltage|
| **Gate-source voltage V\(_{GS}\)** | ±20V | Enhanced anti-interference ability|
| **Threshold voltage V\(_{th}\)** | 3V | Minimum gate voltage required to turn on the MOSFET|
| **On-resistance R\(_{DS(on)}\)** | 6mΩ @ V\(_{GS}\)=10V | Lower conduction loss|
| **Drain current I\(_D\)** | 120A | High current handling capability|
| **Process technology** | Trench | Improved current density and heat dissipation|
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Domain and module applications：
III. Application fields and module examples
1. **Power management**
NCE8060D-VB is an ideal choice for high-efficiency power management solutions, especially for switching power supplies and DC-DC converters. Its low on-resistance and high current capability can effectively reduce energy loss, improve system efficiency, and ensure the stability and reliability of the power supply.
2. **Electric vehicle (EV) drive**
In the drive system of electric vehicles, this MOSFET can be used to control the start and speed regulation of the motor. Due to its high current and low conduction loss characteristics, it can improve the overall performance and driving range of electric vehicles and meet the high-efficiency requirements of modern electric transportation.
3. **Industrial automation and motor control**
NCE8060D-VB can be used for motor control in industrial automation equipment and can efficiently drive high-power motors. Its fast switching characteristics and high current carrying capacity make it excellent in driving motors and loads, and suitable for various industrial environments.
4. **Uninterruptible Power Supply (UPS) System**
In UPS systems, the NCE8060D-VB is used to provide efficient backup power when the main power fails. Its high current and low heat generation characteristics ensure the reliability of the system in emergency situations and can ensure the continuous operation of equipment.
5. **Renewable Energy Inverter**
This MOSFET is also suitable for renewable energy systems, such as solar inverters. Its efficient power conversion capability can ensure the effective use of energy, support the efficient use of renewable energy, and promote the development of green energy.
NCE8060D-VB demonstrates excellent performance in multiple fields and is an ideal choice for applications that require high current and high efficiency, ensuring efficient operation and reliability of various electronic devices.
1. **Power management**
NCE8060D-VB is an ideal choice for high-efficiency power management solutions, especially for switching power supplies and DC-DC converters. Its low on-resistance and high current capability can effectively reduce energy loss, improve system efficiency, and ensure the stability and reliability of the power supply.
2. **Electric vehicle (EV) drive**
In the drive system of electric vehicles, this MOSFET can be used to control the start and speed regulation of the motor. Due to its high current and low conduction loss characteristics, it can improve the overall performance and driving range of electric vehicles and meet the high-efficiency requirements of modern electric transportation.
3. **Industrial automation and motor control**
NCE8060D-VB can be used for motor control in industrial automation equipment and can efficiently drive high-power motors. Its fast switching characteristics and high current carrying capacity make it excellent in driving motors and loads, and suitable for various industrial environments.
4. **Uninterruptible Power Supply (UPS) System**
In UPS systems, the NCE8060D-VB is used to provide efficient backup power when the main power fails. Its high current and low heat generation characteristics ensure the reliability of the system in emergency situations and can ensure the continuous operation of equipment.
5. **Renewable Energy Inverter**
This MOSFET is also suitable for renewable energy systems, such as solar inverters. Its efficient power conversion capability can ensure the effective use of energy, support the efficient use of renewable energy, and promote the development of green energy.
NCE8060D-VB demonstrates excellent performance in multiple fields and is an ideal choice for applications that require high current and high efficiency, ensuring efficient operation and reliability of various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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