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NCE8050AK-VB Product details
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1. NCE8050AK-VB Product Introduction
NCE8050AK-VB is a high-performance single-channel N-type MOSFET in a **TO-252 package**, designed for high current and low on-resistance applications. Its drain-source voltage (VDS) can reach **60V**, and the gate voltage (VGS) is rated at ±20V, ensuring stability under a variety of voltage conditions. The on-resistance (RDS(ON)) of NCE8050AK-VB is **12mΩ @ VGS = 4.5V** and **4.5mΩ @ VGS = 10V** at different gate voltages, and it can withstand drain currents (ID) up to **97A**, making it very suitable for high-efficiency power management and load switching applications. This MOSFET uses **Trench technology** to significantly reduce switching losses and improve the overall efficiency of the system, making it suitable for a variety of power electronics applications.
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NCE8050AK-VB is a high-performance single-channel N-type MOSFET in a **TO-252 package**, designed for high current and low on-resistance applications. Its drain-source voltage (VDS) can reach **60V**, and the gate voltage (VGS) is rated at ±20V, ensuring stability under a variety of voltage conditions. The on-resistance (RDS(ON)) of NCE8050AK-VB is **12mΩ @ VGS = 4.5V** and **4.5mΩ @ VGS = 10V** at different gate voltages, and it can withstand drain currents (ID) up to **97A**, making it very suitable for high-efficiency power management and load switching applications. This MOSFET uses **Trench technology** to significantly reduce switching losses and improve the overall efficiency of the system, making it suitable for a variety of power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NCE8050AK-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-252 | Suitable for compact applications with good heat dissipation|
| **Configuration** | Single-N | Suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 60V | Suitable for medium voltage applications|
| **Gate-Source Voltage (VGS)** | ±20V | Provides sufficient control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3V | When the gate voltage exceeds this value, the MOSFET turns on|
| **On-Resistance (RDS(ON))** | 12mΩ @ VGS = 4.5V | Low on-resistance helps reduce power loss|
| | 4.5mΩ @ VGS = 10V | |
| **Drain Current (ID)** | 97A | Capable of handling high current loads|
| **Technology** | Trench | Improves switching efficiency and reduces heat loss|
| **Operating Temperature Range** | -55°C ~ +150°C | Maintains stable performance in extreme temperatures|
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| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-252 | Suitable for compact applications with good heat dissipation|
| **Configuration** | Single-N | Suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 60V | Suitable for medium voltage applications|
| **Gate-Source Voltage (VGS)** | ±20V | Provides sufficient control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3V | When the gate voltage exceeds this value, the MOSFET turns on|
| **On-Resistance (RDS(ON))** | 12mΩ @ VGS = 4.5V | Low on-resistance helps reduce power loss|
| | 4.5mΩ @ VGS = 10V | |
| **Drain Current (ID)** | 97A | Capable of handling high current loads|
| **Technology** | Trench | Improves switching efficiency and reduces heat loss|
| **Operating Temperature Range** | -55°C ~ +150°C | Maintains stable performance in extreme temperatures|
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Domain and module applications：
III. Applicable fields and application modules of NCE8050AK-VB
1. **Power management module**
NCE8050AK-VB is widely used in **AC-DC converter** and **DC-DC converter**. Its low on-resistance and high current carrying capacity make it very suitable for high-efficiency power management. It can effectively reduce the energy loss in the power conversion process and improve the efficiency of the overall system.
2. **Electric vehicle drive system**
This MOSFET performs well in the motor drive and energy management system of **electric vehicles**. It can be used in scenarios such as motor control and energy recovery to ensure efficient power conversion and control.
3. **Industrial automation**
NCE8050AK-VB is suitable for **industrial control systems**, especially in applications requiring high-power switches, such as motor control and servo drives. Its high current carrying capacity can meet the stringent requirements of various industrial equipment.
4. **LED lighting driver**
In addition, this MOSFET is also suitable for **high-power LED lighting** applications, ensuring efficient lamp driving and extended service life through its excellent switching performance and low on-resistance.
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NCE8050AK-VB, with its high current handling capability and low on-resistance, is an ideal choice for power management, electric vehicles, industrial automation and high-power lighting. Combined with **Trench technology**, it effectively improves the efficiency and stability of the system and is an indispensable component in modern power electronics design.
1. **Power management module**
NCE8050AK-VB is widely used in **AC-DC converter** and **DC-DC converter**. Its low on-resistance and high current carrying capacity make it very suitable for high-efficiency power management. It can effectively reduce the energy loss in the power conversion process and improve the efficiency of the overall system.
2. **Electric vehicle drive system**
This MOSFET performs well in the motor drive and energy management system of **electric vehicles**. It can be used in scenarios such as motor control and energy recovery to ensure efficient power conversion and control.
3. **Industrial automation**
NCE8050AK-VB is suitable for **industrial control systems**, especially in applications requiring high-power switches, such as motor control and servo drives. Its high current carrying capacity can meet the stringent requirements of various industrial equipment.
4. **LED lighting driver**
In addition, this MOSFET is also suitable for **high-power LED lighting** applications, ensuring efficient lamp driving and extended service life through its excellent switching performance and low on-resistance.
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NCE8050AK-VB, with its high current handling capability and low on-resistance, is an ideal choice for power management, electric vehicles, industrial automation and high-power lighting. Combined with **Trench technology**, it effectively improves the efficiency and stability of the system and is an indispensable component in modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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