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NCE75H35TC-VB Product details
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NCE75H35TC-VB Product Introduction
NCE75H35TC-VB is a high-performance N-Channel MOSFET in a TO263 package designed for high voltage and high current applications. The device has a V_DS of 80V, a V_GS that can operate in the ±20V range, and has an extremely low on-resistance (R_DS(ON) of 10mΩ@V_GS=4.5V and 5mΩ@V_GS=10V), making it ideal for power management and switching applications. Its maximum continuous current (I_D) can reach 215A, meeting high power requirements, and its application of Trench technology improves efficiency and thermal management capabilities.
NCE75H35TC-VB is a high-performance N-Channel MOSFET in a TO263 package designed for high voltage and high current applications. The device has a V_DS of 80V, a V_GS that can operate in the ±20V range, and has an extremely low on-resistance (R_DS(ON) of 10mΩ@V_GS=4.5V and 5mΩ@V_GS=10V), making it ideal for power management and switching applications. Its maximum continuous current (I_D) can reach 215A, meeting high power requirements, and its application of Trench technology improves efficiency and thermal management capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: NCE75H35TC-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 80V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 10mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 215A
- **Technology**: Trench technology
- **Model**: NCE75H35TC-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 80V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 10mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 215A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
NCE75H35TC-VB is widely used in many fields and modules, mainly including:
1. **Power management**:
- Due to its low on-resistance and high current carrying capacity, this MOSFET is very suitable for DC-DC converters and power supplies, which can efficiently manage power distribution.
2. **Electric vehicles**:
- In the drive system and charging module of electric vehicles, NCE75H35TC-VB can be used as a motor drive and power switch to ensure efficient energy transmission and conversion.
3. **High-frequency switching power supply**:
- Its low switching loss characteristics make it very suitable for high-frequency switching power supply design, which can maintain stable performance under high-frequency operation.
4. **Industrial automation**:
- In industrial automation equipment, it is used to drive loads and control motors, and can withstand high current and high voltage operation requirements.
5. **Consumer Electronics**:
- Suitable for high-performance power management solutions such as battery chargers, laptop power adapters, etc.
Through its excellent electrical performance and thermal management capabilities, NCE75H35TC-VB demonstrates great advantages in various high-power and high-performance applications.
NCE75H35TC-VB is widely used in many fields and modules, mainly including:
1. **Power management**:
- Due to its low on-resistance and high current carrying capacity, this MOSFET is very suitable for DC-DC converters and power supplies, which can efficiently manage power distribution.
2. **Electric vehicles**:
- In the drive system and charging module of electric vehicles, NCE75H35TC-VB can be used as a motor drive and power switch to ensure efficient energy transmission and conversion.
3. **High-frequency switching power supply**:
- Its low switching loss characteristics make it very suitable for high-frequency switching power supply design, which can maintain stable performance under high-frequency operation.
4. **Industrial automation**:
- In industrial automation equipment, it is used to drive loads and control motors, and can withstand high current and high voltage operation requirements.
5. **Consumer Electronics**:
- Suitable for high-performance power management solutions such as battery chargers, laptop power adapters, etc.
Through its excellent electrical performance and thermal management capabilities, NCE75H35TC-VB demonstrates great advantages in various high-power and high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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