NCE75H26T-VB Product details
Product introduction:
NCE75H26T-VB is a high-performance **single N-channel MOSFET**, which adopts **TO-247** package and is designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) reaches **80V**, and the gate-source voltage (VGS) can withstand up to **±20V**. It has a **3.5V threshold voltage (Vth)**, ensuring fast turn-on at a lower gate voltage. The on-resistance of this MOSFET is extremely low, **4mΩ@VGS=4.5V** and **2.8mΩ@VGS=10V**, which can significantly reduce switching losses and improve system efficiency. The maximum drain current (ID) is **215A**, which is suitable for various applications that need to handle high current. NCE75H26T-VB adopts **Trench (trench) technology**, which not only provides excellent conductivity, but also effectively reduces energy loss. It is an ideal choice for modern power supply design and control circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Description and value** |
|---------------------------|------------------------------------------|
| **Model** | NCE75H26T-VB |
| **Package** | TO-247 |
| **Channel type** | Single-N-Channel |
| **Maximum drain-source voltage (VDS)** | 80V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 4mΩ (@VGS = 4.5V) |
| | 2.8mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 215A |
| **Technology** | Trench (trench technology) |
| **Operating temperature range** | -55°C to +150°C |
| **Power consumption (Ptot)** | 75W |
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Domain and module applications:
1. **High-Efficiency Power Converters**
NCE75H26T-VB is particularly suitable for high-efficiency power converters, such as DC-DC converters and switching power supplies, with its low on-resistance to achieve high efficiency and low energy loss.
2. **Electric Vehicle Drive Systems**
In the motor control and power management system of electric vehicles, NCE75H26T-VB can efficiently handle high currents, ensuring fast response and good thermal management.
3. **Battery Management Systems**
This MOSFET can provide stable and efficient control during battery charging and discharging, and is particularly suitable for the management and monitoring of high-capacity batteries.
4. **Uninterruptible Power Supply (UPS Systems)**
NCE75H26T-VB can achieve fast switching in UPS systems, ensuring that key equipment can obtain continuous and stable power when the mains power is interrupted.
5. **Industrial Automation (Industrial Automation)**
This MOSFET is widely used in various industrial equipment and machine control, and can effectively handle high current demands and improve system reliability and efficiency.
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NCE75H26T-VB's low on-resistance and high current handling capabilities make it an excellent performer in many fields and an indispensable component in modern electronic design.
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