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NCE75H21D-VB Product details
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1. NCE75H21D-VB Product Introduction
NCE75H21D-VB is a high-performance single N-channel MOSFET in a **TO-263 package**, designed for a variety of power management and high-efficiency switching applications. The device has a **80V** maximum **drain-source voltage (V\(_{DS}\))** and **±20V gate-source voltage (V\(_{GS}\))**, enabling safe and stable operation under a wide range of voltage conditions. Its **threshold voltage (V\(_{th}\))** is **3V**, ensuring effective turn-on at low voltages. Under **V\(_{GS}\) = 10V**, the **on-resistance (R\(_{DS(ON)}\))** of NCE75H21D-VB is only **3.1mΩ**, supporting a continuous drain current of up to **230A**. Using **Trench** technology, this MOSFET not only improves conduction efficiency, but also significantly reduces power consumption, making it very suitable for high-efficiency power conversion and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | 3.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE75H21D-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO-263 | Compact package, suitable for high power devices|
| **Channel type** | Single N-channel | Enhancement mode MOSFET, suitable for switch control|
| **V\(_{DS}\)** | 80V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range|
| **V\(_{th}\)** | 3V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 3.1mΩ (V\(_{GS}\) = 10V) | Drain-source resistance at high gate voltage|
| **I\(_D\)** | 230A | Maximum continuous drain current|
| **Technology** | Trench | Superjunction technology for improved performance and energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Suitable for various complex working environments|
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Domain and module applications：
3. Applicable fields and module application examples
1. **High-efficiency switching power supply (SMPS)**
NCE75H21D-VB is suitable for **high-efficiency switching power supply**, such as server power supply, laptop adapter, etc. This MOSFET has low on-resistance, which can effectively reduce power consumption and heat, ensuring high efficiency and stability of the power system.
2. **Electric vehicle (EV) drive system**
In the power management system of **electric vehicles**, NCE75H21D-VB can be used in motor drivers and power conversion modules to handle high current loads, ensuring high efficiency and reliable performance, especially during acceleration and braking.
3. **Industrial automation and control**
In **industrial automation** applications, this MOSFET can be used to drive high-power motors, conveyor belts, control valves and other equipment, providing fast switching performance and high reliability to meet the stringent requirements in industrial environments.
4. **LED lighting driver**
Suitable for the driver circuit of **LED lighting** system, NCE75H21D-VB can provide stable current to ensure the high efficiency and life of LED modules while reducing energy consumption.
5. **Battery Management System (BMS)**
In the **Battery Management System**, NCE75H21D-VB can be used for high-voltage switching, balanced charging and over-current protection, which helps to improve the safety, reliability and energy efficiency of the system.
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With its excellent electrical characteristics and wide application areas, NCE75H21D-VB is an ideal choice for high-performance power management and high-efficiency drive applications. Its high current carrying capacity and low on-resistance characteristics make it a key component in various high-efficiency and high-reliability circuits.
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