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NCE7580A-VB Product details

Product introduction:

1. NCE7580A-VB Product Introduction
NCE7580A-VB is a high-performance **single N-channel MOSFET**, using **TO220 package**, designed for high current and high-efficiency applications. The device's **drain-source voltage (VDS)** can reach **80V**, supports **±20V gate-source voltage (VGS)**, and the threshold voltage (Vth) is **3V**, making it suitable for a variety of driving environments. The **on-resistance (RDS(ON))** of NCE7580A-VB is only **7mΩ** at VGS = 10V and **9mΩ** at VGS = 4.5V, which shows that the device has extremely low conduction losses and excellent thermal performance, and can carry a maximum continuous drain current (ID) of up to **100A**. Based on **Trench technology**, this MOSFET improves switching speed and efficiency, making it an ideal choice for efficient power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. NCE7580A-VB Detailed Parameter Description
| **Parameter** | **Description** | **Value** |
|---------------------|--------------------------|------------------------|
| **Package Type** | TO220 | Efficient heat dissipation, suitable for high power applications|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel switch control|
| **Drain-Source Voltage (VDS)** | Maximum Withstand Voltage| 80V |
| **Gate-Source Voltage (VGS)** | Gate Drive Voltage Range| ±20V |
| **Threshold Voltage (Vth)** | Gate Turn-On Voltage| 3V |
| **On-Resistance (RDS(ON))** | On-Resistance at VGS = 10V| 7mΩ |
| **On-Resistance (RDS(ON))** | On-Resistance at VGS = 4.5V| 9mΩ |
| **Continuous Drain Current (ID)** | Maximum Current Carrying Capacity| 100A |
| **Technology Type** | Trench Technology| Improved Switching Efficiency and Thermal Performance|
| **Operating Temperature Range** | -55°C ~ +150°C | Wide Temperature Range|

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Domain and module applications:

III. Application fields and typical module examples

1. **Switching power supply (SMPS)**
- NCE7580A-VB can be widely used in switching power supply design as an efficient switching element. In AC-DC converters and DC-DC converters, it reduces power consumption and improves efficiency to ensure stable power output.

2. **Electric vehicle power management system**
- In the power management system of electric vehicles, this MOSFET can be used for motor control and battery management, supports high current and high voltage applications, and improves the energy efficiency and endurance of electric vehicles.

3. **High-efficiency LED lighting driver**
- This device is suitable for high-efficiency LED lighting drive circuits. Through its low on-resistance characteristics, it can effectively control the brightness and current of LED lighting to ensure stable light output.

4. **Industrial Automation and Control**
- NCE7580A-VB can be used in motor drive, servo control and other high current control circuits in the field of industrial automation to meet the needs of industrial equipment for high efficiency and stability.

5. **Power Management IC (PMIC)**
- This MOSFET can be used as a switching element in a power management integrated circuit to control the switching and distribution of power and provide stable power for various electronic devices.

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NCE7580A-VB combines the characteristics of **high voltage, low conduction loss and high current carrying capacity**, and is suitable for **switching power supplies, electric vehicles, power management ICs, LED lighting drivers** and **industrial automation**. Its **TO220 package** provides good heat dissipation performance and can meet the requirements of modern high-power applications for efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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