Product introduction：
1. NCE7190-VB Product Introduction
NCE7190-VB is a single N-channel MOSFET in a TO-220 package, designed for high-performance power management applications. The device has a maximum drain-source voltage (V\(_{DS}\)) of 80V and a gate-source voltage (V\(_{GS}\)) of ±20V, enabling it to operate safely under a wide range of voltage conditions. Its threshold voltage (V\(_{th}\)) is 3V, ensuring effective control even at low voltages. Under the condition of V\(_{GS}\) = 10V, the on-resistance (R\(_{DS(ON)}\)) of NCE7190-VB is only 7mΩ, supporting a continuous drain current of up to 100A. Using **Trench** technology, this MOSFET not only improves conduction efficiency but also reduces power consumption, making it very suitable for high-efficiency power conversion and control applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description of NCE7190-VB
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-220 | Commonly used package for high-power devices, easy to dissipate heat|
| **Channel type** | Single N-channel | Enhancement MOSFET, suitable for switch control|
| **V\(_{DS}\)** | 80V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range|
| **V\(_{th}\)** | 3V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 7mΩ (V\(_{GS}\) = 10V) | Drain-source resistance, affecting power consumption and on-time efficiency|
| **R\(_{DS(ON)}\)** | 9mΩ (V\(_{GS}\) = 4.5V) | On-time resistance at low gate voltage|
| **I\(_D\)** | 100A | Maximum continuous drain current|
| **Technology** | Trench | Superjunction technology for improved performance and energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Adaptable to various complex working environments|
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Domain and module applications：
3. Applicable fields and module application examples
1. **High-efficiency switching power supply (SMPS)**
NCE7190-VB is suitable for **high-efficiency switching power supplies**, such as server power supplies, PC power supplies and other power adapters. Its low on-resistance ensures that energy losses are minimized, improves overall conversion efficiency and reduces heat generation.
2. **Electric vehicle (EV) drive system**
In the power system of **electric vehicles**, NCE7190-VB can be used for high-voltage conversion and switching control of motor drives, handling high-current loads, and ensuring efficient and reliable performance.
3. **Industrial automation equipment**
In **industrial automation** systems, this MOSFET can be used to drive high-power motors and loads, especially in application scenarios that require fast switching and high efficiency, such as conveyor systems and machine control.
4. **LED lighting driver**
Suitable for the driver circuit of **LED lighting** solution, NCE7190-VB can provide stable current to LED modules and ensure efficient energy conversion and thermal management.
5. **Battery Management System (BMS)**
In the **Battery Management System**, NCE7190-VB can be used for high-voltage switching and over-current protection, which helps to improve the safety and reliability of the system.
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With its excellent electrical characteristics and wide application areas, NCE7190-VB is an ideal choice for high-performance power management and high-efficiency drive applications. Its high current carrying capacity and low on-resistance characteristics make it a key component in various high-efficiency and high-reliability circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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