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NCE70T900I-VB Product details
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1. NCE70T900I-VB Product Introduction
NCE70T900I-VB is a single N-channel MOSFET in a TO251 package, designed for high voltage and medium power applications. Its drain-source voltage (VDS) can reach up to 700V, supports a gate-source voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V, which can achieve efficient switching control at a lower driving voltage. The device has an on-resistance (RDS(ON)) of 750mΩ at VGS = 10V and a maximum continuous drain current (ID) of 7A, which is suitable for stable current management in high-voltage scenarios.
Based on SJ_Multi-EPI technology, this MOSFET optimizes switching loss and conduction loss while ensuring high voltage resistance, and is suitable for modules and systems that require efficient energy transmission and high-voltage control.
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NCE70T900I-VB is a single N-channel MOSFET in a TO251 package, designed for high voltage and medium power applications. Its drain-source voltage (VDS) can reach up to 700V, supports a gate-source voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V, which can achieve efficient switching control at a lower driving voltage. The device has an on-resistance (RDS(ON)) of 750mΩ at VGS = 10V and a maximum continuous drain current (ID) of 7A, which is suitable for stable current management in high-voltage scenarios.
Based on SJ_Multi-EPI technology, this MOSFET optimizes switching loss and conduction loss while ensuring high voltage resistance, and is suitable for modules and systems that require efficient energy transmission and high-voltage control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description of NCE70T900I-VB
| **Parameter** | **Description** | **Value** |
|---------------------|--------------------------|------------------------|
| **Package type** | TO251 | Compact package, suitable for medium power applications|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel switch control|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 700V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±30V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3.5V |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 10V| 750mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 7A |
| **Technology type** | SJ_Multi-EPI Technology | Improved efficiency and reliability under high pressure |
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range |
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| **Parameter** | **Description** | **Value** |
|---------------------|--------------------------|------------------------|
| **Package type** | TO251 | Compact package, suitable for medium power applications|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel switch control|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 700V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±30V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3.5V |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 10V| 750mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 7A |
| **Technology type** | SJ_Multi-EPI Technology | Improved efficiency and reliability under high pressure |
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range |
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Domain and module applications：
III. Application fields and typical module examples
1. **Photovoltaic inverter**
- NCE70T900I-VB can be used in the inverter module of the photovoltaic power generation system. When converting DC to AC, this MOSFET acts as a key switching element to improve the efficiency and stability of the system.
2. **Smart meter and power distribution system**
- In smart grid equipment and meters, this device can be used for high-voltage isolation and switch control circuits to ensure the safe operation of energy metering equipment in high-voltage environments.
3. **Industrial switching power supply**
- NCE70T900I-VB can meet the high-voltage power supply requirements of industrial equipment and is used in AC-DC conversion or isolation modules to optimize energy conversion efficiency and improve power consumption management capabilities.
4. **Power Modules in Home Appliances**
- In high-power home appliances such as air conditioners and refrigerators, this MOSFET can be used to control the start-up and operation of compressors and motors, ensuring efficient power management and reducing energy consumption.
5. **High-voltage LED Lighting Driver**
- This device is suitable for the driver circuit of high-power LED lighting systems, providing stable current control and improving the energy efficiency of LED systems at high voltages.
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NCE70T900I-VB combines the characteristics of **high withstand voltage, low conduction loss and efficient switching**, and has a wide range of application prospects in **photovoltaic systems, smart meters, industrial power supplies, home appliance power modules** and **LED lighting drivers**. Its **TO251 package** provides a compact and reliable solution to meet the performance and efficiency requirements of modern high-voltage applications.
1. **Photovoltaic inverter**
- NCE70T900I-VB can be used in the inverter module of the photovoltaic power generation system. When converting DC to AC, this MOSFET acts as a key switching element to improve the efficiency and stability of the system.
2. **Smart meter and power distribution system**
- In smart grid equipment and meters, this device can be used for high-voltage isolation and switch control circuits to ensure the safe operation of energy metering equipment in high-voltage environments.
3. **Industrial switching power supply**
- NCE70T900I-VB can meet the high-voltage power supply requirements of industrial equipment and is used in AC-DC conversion or isolation modules to optimize energy conversion efficiency and improve power consumption management capabilities.
4. **Power Modules in Home Appliances**
- In high-power home appliances such as air conditioners and refrigerators, this MOSFET can be used to control the start-up and operation of compressors and motors, ensuring efficient power management and reducing energy consumption.
5. **High-voltage LED Lighting Driver**
- This device is suitable for the driver circuit of high-power LED lighting systems, providing stable current control and improving the energy efficiency of LED systems at high voltages.
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NCE70T900I-VB combines the characteristics of **high withstand voltage, low conduction loss and efficient switching**, and has a wide range of application prospects in **photovoltaic systems, smart meters, industrial power supplies, home appliance power modules** and **LED lighting drivers**. Its **TO251 package** provides a compact and reliable solution to meet the performance and efficiency requirements of modern high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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