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NCE70T900F-VB Product details

Product introduction:



NCE70T900F-VB is a **single N-channel MOSFET** in a **TO220F package**, designed for high voltage and medium current power applications. Its **VDS** rating is **700V**, which can cope with the power transmission needs in high voltage environments, and **VGS** supports **±30V**, ensuring the safety and stability of its gate under different voltage control. The **turn-on voltage (Vth)** of the device is **3.5V**, which is suitable for standard driver or control circuits. Its **on-resistance (RDS(ON))** is **800mΩ** at **VGS=10V**, providing good switching efficiency. The maximum drain current **ID** of the MOSFET is **7A**, and based on **Plannar technology**, the device achieves a good balance between reliability and heat dissipation capabilities.

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## 2. NCE70T900F-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 3.5V 7A 800mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 700V 3.5V 7A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 700V 3.5V 7A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N


| **Parameter** | **Specification** | **Description** |
|-------------------------|------------------------------|------------------------------|
| **Package** | TO220F | Provides good heat dissipation and electrical isolation|
| **Channel type** | Single N-channel | Suitable for efficient switching applications|
| **Drain-source voltage (VDS)** | 700V | Can be used in high-voltage applications|
| **Gate-source voltage (VGS)** | ±30V | Supports a variety of drive circuits|
| **Turning voltage (Vth)** | 3.5V | Moderate startup voltage, compatible with low-voltage controllers|
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=4.5V; 800mΩ @ VGS=10V | Ensures low current loss when turned on|
| **Maximum drain current (ID)** | 7A | Meet medium current load requirements|
| **Working technology** | Plannar | Emphasize stability and reliability|
| **Operating temperature range** | -55°C to +150°C | Adapt to harsh industrial environments|

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## III.

Domain and module applications:



1. **Industrial Power Supplies and Switchgear**
The NCE70T900F-VB is suitable for high-voltage control and switching modules in industrial power systems. For example, in power management modules in factory automation, the device can effectively perform load switching to ensure high-voltage safe switching of circuits.

2. **Inverter Circuits in Household Appliances**
The device can be used in inverter circuits of household appliances such as air conditioners and refrigerators to help achieve high-voltage DC-AC conversion, allowing the equipment to operate efficiently and extend its service life.

3. **Power Adapters and Chargers**
In high-power adapters or chargers, the NCE70T900F-VB can be used as a high-voltage switching device to ensure stable power output and high energy conversion efficiency, especially for electric vehicle charging piles and high-power UPS systems.

4. **Lighting control and high-voltage LED drive**
This MOSFET performs well in high-voltage LED drive circuits, efficiently controlling current flow and reducing heat generation, providing a reliable solution for outdoor and industrial lighting.

5. **Renewable energy inverter**
In the inverter module of photovoltaic or wind power generation systems, the 700V voltage capability of NCE70T900F-VB can cope with harsh environmental requirements and ensure efficient and stable energy transmission.

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As a high-voltage MOSFET with planar technology, NCE70T900F-VB plays an important role in power systems, efficient drives and energy management. With its excellent conduction performance and high voltage capability, it is suitable for a wide range of applications in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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