Product introduction：
1. NCE70T680-VB Product Introduction
NCE70T680-VB is a single N-channel MOSFET in a TO-220 package, designed for high-voltage applications. Its maximum drain-source voltage (V\(_{DS}\)) is 700V, and supports a gate-source voltage (V\(_{GS}\)) of ±30V. The device has a threshold voltage (V\(_{th}\)) of 3.5V, making it easy to control and have good switching speed. At V\(_{GS}\) = 10V, its on-resistance (R\(_{DS(ON)}\)) is 750mΩ, supporting a continuous drain current of 7A. It uses super junction multi-epitaxial (SJ Multi-EPI) technology to further reduce power consumption, improve system efficiency and reliability, and is very suitable for various high-voltage switching circuits and power systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
|
3.5V |
7A |
|
|
750mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
700V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
700V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. NCE70T680-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-220 | Commonly used package for high-power devices, easy to dissipate heat|
| **Channel type** | Single N-channel | Enhancement MOSFET, suitable for switch control|
| **V\(_{DS}\)** | 700V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Gate turn-on threshold voltage|
| **R\(_{DS(ON)}\)** | 750mΩ (V\(_{GS}\) = 10V) | Drain-source resistance, affecting power consumption and conduction efficiency|
| **I\(_D\)** | 7A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction multi-epitaxial technology improves performance and energy efficiency|
| **Operating temperature range** | -55°C to 150°C | Adapt to various complex working environments|
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Domain and module applications：
3. Applicable fields and module application examples
1. **High-voltage switching power supply (SMPS)**
NCE70T680-VB is suitable for **high-voltage switching power supply**, especially for applications requiring 700V withstand voltage, such as industrial equipment and telecommunication power supply. Its low on-resistance and fast response can improve power conversion efficiency and reduce energy loss.
2. **LED driver for lighting system**
In **LED lighting system**, this MOSFET can be used to drive high-power LED modules, ensuring stable current control and high efficiency while meeting the needs of high-voltage applications, such as street lighting and commercial lighting.
3. **Photovoltaic inverter**
Applicable to DC-AC inverter modules in **photovoltaic power generation systems**, converting direct current generated by solar energy into alternating current. The high-voltage capability of NCE70T680-VB enables it to operate reliably in harsh environments and ensure high energy efficiency.
4. **Industrial automation equipment and inverters**
This device can be used in the inverter modules of **industrial control systems** and **motor drives**, and can achieve precise control of motors through high-voltage switches, which is suitable for automation equipment and conveying systems.
5. **PFC circuits in home appliances**
In the power factor correction (PFC) circuits of **home appliances**, the NCE70T680-VB can improve the conversion efficiency of electric energy, reduce harmonic distortion, and ensure system stability.
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With its high withstand voltage, low on-resistance, and efficient switching characteristics, the NCE70T680-VB is an ideal choice for high-voltage application scenarios. Whether it is power conversion, lighting drive or industrial control, this MOSFET can effectively improve the efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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