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NCE70T680D-VB Product details
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1. NCE70T680D-VB Product Introduction
NCE70T680D-VB is a single-channel N-type MOSFET in a **TO-263 package**, designed for high-voltage, high-efficiency power conversion scenarios. Its drain-source voltage (VDS) is **700V**, and its gate voltage (VGS) is ±30V, which adapts to stable switching operations under high-voltage environments. The device has an on-resistance (RDS(ON)) of **450mΩ @ VGS = 10V**, and a drain current (ID) of **11A**, making it perform well in high-voltage and medium-current situations. NCE70T680D-VB uses **SJ_Multi-EPI (super junction multilayer epitaxy)** technology, which can effectively reduce power consumption and enhance thermal stability, making it an ideal choice for industrial equipment, power modules, and new energy applications.
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NCE70T680D-VB is a single-channel N-type MOSFET in a **TO-263 package**, designed for high-voltage, high-efficiency power conversion scenarios. Its drain-source voltage (VDS) is **700V**, and its gate voltage (VGS) is ±30V, which adapts to stable switching operations under high-voltage environments. The device has an on-resistance (RDS(ON)) of **450mΩ @ VGS = 10V**, and a drain current (ID) of **11A**, making it perform well in high-voltage and medium-current situations. NCE70T680D-VB uses **SJ_Multi-EPI (super junction multilayer epitaxy)** technology, which can effectively reduce power consumption and enhance thermal stability, making it an ideal choice for industrial equipment, power modules, and new energy applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE70T680D-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-263 | Surface mount package, suitable for high power density PCB design|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 700V | Suitable for high voltage applications such as power conversion and control systems|
| **Gate-Source Voltage (VGS)** | ±30V | Provides good control margin|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | MOSFET turns on when the gate voltage exceeds this value|
| **On-Resistance (RDS(ON))** | 450mΩ @ VGS = 10V | Lower on-resistance reduces power loss|
| **Drain Current (ID)** | 11A | Supports medium current loads|
| **Technology** | SJ_Multi-EPI | Superjunction technology improves efficiency and reduces heat dissipation|
| **Operating Temperature Range** | -55°C ~ +150°C | Stable operation in extreme temperatures|
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| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-263 | Surface mount package, suitable for high power density PCB design|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 700V | Suitable for high voltage applications such as power conversion and control systems|
| **Gate-Source Voltage (VGS)** | ±30V | Provides good control margin|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | MOSFET turns on when the gate voltage exceeds this value|
| **On-Resistance (RDS(ON))** | 450mΩ @ VGS = 10V | Lower on-resistance reduces power loss|
| **Drain Current (ID)** | 11A | Supports medium current loads|
| **Technology** | SJ_Multi-EPI | Superjunction technology improves efficiency and reduces heat dissipation|
| **Operating Temperature Range** | -55°C ~ +150°C | Stable operation in extreme temperatures|
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Domain and module applications：
III. Applicable fields and application modules of NCE70T680D-VB
1. **Industrial power module**
NCE70T680D-VB is suitable for **industrial power systems**, such as **AC-DC converter** and **DC-DC converter**. Its 700V drain-source voltage and medium current capability enable it to work efficiently in devices requiring high-voltage output, ensuring the safety and reliability of the system.
2. **Photovoltaic inverter and new energy system**
In **photovoltaic inverter** and **energy storage system**, the device can stably process high-voltage DC signals, improve the conversion efficiency of the system, and ensure stability during long-term operation. The thermal management capability of this MOSFET reduces the need for heat dissipation and simplifies system design.
3. **EV Charging Pile and Battery Management System**
In **EV Charging Pile** and **Battery Management System**, this MOSFET can be used for switching control of high-voltage charging modules, providing a reliable power conversion solution and ensuring safe operation to avoid overload and overheating.
4. **High-voltage LED Lighting System**
The device performs well in **LED drive circuits**, especially for high-voltage lighting systems such as **outdoor lighting** and **industrial lighting**. Its low on-resistance reduces power consumption while supporting efficient PWM dimming control.
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With its high-voltage characteristics and medium-current capabilities, the NCE70T680D-VB is widely used in industrial power supplies, new energy systems, battery management and lighting control. Its **super junction multi-layer epitaxial technology** helps improve the system's conversion efficiency and thermal management capabilities, making it an ideal solution for a variety of high-voltage and high-efficiency applications.
1. **Industrial power module**
NCE70T680D-VB is suitable for **industrial power systems**, such as **AC-DC converter** and **DC-DC converter**. Its 700V drain-source voltage and medium current capability enable it to work efficiently in devices requiring high-voltage output, ensuring the safety and reliability of the system.
2. **Photovoltaic inverter and new energy system**
In **photovoltaic inverter** and **energy storage system**, the device can stably process high-voltage DC signals, improve the conversion efficiency of the system, and ensure stability during long-term operation. The thermal management capability of this MOSFET reduces the need for heat dissipation and simplifies system design.
3. **EV Charging Pile and Battery Management System**
In **EV Charging Pile** and **Battery Management System**, this MOSFET can be used for switching control of high-voltage charging modules, providing a reliable power conversion solution and ensuring safe operation to avoid overload and overheating.
4. **High-voltage LED Lighting System**
The device performs well in **LED drive circuits**, especially for high-voltage lighting systems such as **outdoor lighting** and **industrial lighting**. Its low on-resistance reduces power consumption while supporting efficient PWM dimming control.
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With its high-voltage characteristics and medium-current capabilities, the NCE70T680D-VB is widely used in industrial power supplies, new energy systems, battery management and lighting control. Its **super junction multi-layer epitaxial technology** helps improve the system's conversion efficiency and thermal management capabilities, making it an ideal solution for a variety of high-voltage and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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