NCE70T540I-VB Product details
Product introduction:
NCE70T540I-VB is a high-performance **single N-channel MOSFET**, using **TO-251** package, designed for high-voltage power supply applications. Its maximum drain-source voltage (VDS) reaches **700V**, ensuring reliable operation in high-voltage environments, suitable for various power conversion and control circuits. The device has a gate-source voltage range of **±30V (VGS)**, with a **3.5V threshold voltage (Vth)**, which can be turned on quickly under appropriate gate voltage. The NCE70T540I-VB has an on-resistance of **600mΩ@VGS=10V**, which makes it exhibit excellent energy efficiency under high load conditions, and the maximum drain current (ID) is **10A**, which can handle a certain scale of current load. Using **SJ_Multi-EPI (super junction multi-epitaxial) technology**, the device effectively reduces conduction loss and improves voltage resistance, making it very suitable for applications such as power management and industrial control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| **Parameter** | **Description and value** |
|---------------------------|------------------------------------------|
| **Model** | NCE70T540I-VB |
| **Package** | TO-251 |
| **Channel type** | Single-N-Channel |
| **Maximum drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 600mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 10A |
| **Technology** | SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology) |
| **Operating temperature range** | -55°C to +150°C |
| **Power consumption (Ptot)** | 45W |
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Domain and module applications:
1. **Power Converters**
NCE70T540I-VB can be used for high-voltage DC/AC conversion in power converters, adapting to high load currents and ensuring high-efficiency energy conversion. It is suitable for industrial power supplies and laboratory equipment.
2. **Uninterruptible Power Supply (UPS Systems)**
In uninterruptible power supply systems, this MOSFET provides reliable power switching capabilities, which can quickly switch power when a power grid fails to protect the connected load.
3. **Industrial Automation**
Applicable to various industrial automation equipment, it can efficiently drive motors and other high-voltage loads to ensure stable operation of equipment under high load and high voltage conditions.
4. **Home Appliances**
NCE70T540I-VB can be used in power modules for home appliances, such as microwave ovens and washing machines, to help achieve efficient energy management and control and improve user experience.
5. **Solar Inverters**
In photovoltaic power generation systems, this device can be used as a switching element in photovoltaic inverters to convert solar energy into usable electrical energy, helping to improve system efficiency.
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NCE70T540I-VB's high withstand voltage capability, low conduction loss and reliable performance make it an ideal choice for high-voltage power supply and energy management applications, and is widely used in various power electronic equipment and systems.
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