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NCE70T540D-VB Product details
Back to previous pageProduct introduction：
NCE70T540D-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high-voltage and high-efficiency power applications. The device has a drain-source voltage (VDS) of up to 700V, making it possible to operate stably in high-voltage environments. Its gate-source voltage (VGS) range is ±30V, providing flexibility and safety for design. The turn-on voltage (Vth) is 3.5V, which makes it more compatible with low-voltage drive circuits. The on-resistance (RDS(ON)) of NCE70T540D-VB at VGS=10V is 450mΩ, with excellent conductivity. The maximum drain current (ID) is 11A, and the SJ_Multi-EPI technology is used to ensure high efficiency and low switching losses, making it suitable for a variety of power electronics applications.
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## 2. NCE70T540D-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Specification** | **Description** |
|------------------------|--------------------------------|------------------------------|
| **Package** | TO263 | Provides good heat dissipation performance|
| **Channel type** | Single N-channel | Suitable for high-efficiency switch design|
| **Drain-source voltage (VDS)** | 700V | High voltage application|
| **Gate-source voltage (VGS)** | ±30V | Provides high withstand voltage design|
| **Turning point voltage (Vth)** | 3.5V | Convenient for low voltage drive|
| **On-resistance (RDS(ON))** | 450mΩ @ VGS=10V | Suitable for high current application|
| **Maximum drain current (ID)** | 11A | Meets medium current load requirements|
| **Working technology** | SJ_Multi-EPI | Improved switching efficiency |
| **Operating temperature range** | -55°C to +150°C | Suitable for wide temperature range applications |
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## III.
Domain and module applications：
1. **High-voltage power management**
The NCE70T540D-VB is suitable for switch-mode power supplies (SMPS) and high-voltage DC-DC converters. Its 700V drain-source voltage can meet various power requirements, making efficient energy conversion possible.
2. **Power tools and industrial equipment**
This MOSFET performs well in power tools and industrial automation equipment, and can efficiently drive motors and other loads, providing reliable power solutions for equipment.
3. **Renewable energy systems**
The NCE70T540D-VB can be used in solar inverters and wind power systems to help convert DC power to AC power, improve energy efficiency, and support the development of green energy.
4. **Lighting control systems**
In high-voltage LED lighting applications, the device can be used as a driver power supply, achieving high efficiency with its low on-resistance, and supporting modern intelligent lighting systems.
5. **Power Converters and Regulators**
This MOSFET is suitable for power converters and regulators, such as uninterruptible power supplies (UPS) and power adapters, to ensure stable and efficient power supply.
With its high voltage capability, low conduction loss and reliable performance, NCE70T540D-VB has shown its wide application prospects in multiple power electronics fields and can meet the high standards of efficiency and performance of modern electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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