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NCE70T2K2K-VB Product details
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1. NCE70T2K2K-VB Product Introduction
NCE70T2K2K-VB is a **single N-channel power MOSFET**, using **TO-252 package**, designed for high voltage applications. The device has a **drain-source voltage (V_DS)** of up to **700V**, suitable for use in high voltage environments. The gate-source voltage (V_GS) can reach up to ±30V, enabling it to meet the requirements of a variety of control circuits. The threshold voltage (V_th) of this MOSFET is 3.5V, and it has an **2400mΩ** on-resistance (R_DS(ON)) at V_GS=10V, and a maximum drain current (I_D) of **2A**. NCE70T2K2K-VB uses **Super Junction (SJ) multi-layer EPI technology**, which is designed to increase power density, reduce switching losses, and provide excellent thermal performance, making it very suitable for power conversion, motor control, and renewable energy.
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NCE70T2K2K-VB is a **single N-channel power MOSFET**, using **TO-252 package**, designed for high voltage applications. The device has a **drain-source voltage (V_DS)** of up to **700V**, suitable for use in high voltage environments. The gate-source voltage (V_GS) can reach up to ±30V, enabling it to meet the requirements of a variety of control circuits. The threshold voltage (V_th) of this MOSFET is 3.5V, and it has an **2400mΩ** on-resistance (R_DS(ON)) at V_GS=10V, and a maximum drain current (I_D) of **2A**. NCE70T2K2K-VB uses **Super Junction (SJ) multi-layer EPI technology**, which is designed to increase power density, reduce switching losses, and provide excellent thermal performance, making it very suitable for power conversion, motor control, and renewable energy.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NCE70T2K2K-VB Parameters Description
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|-------------------------------|
| **Package** | TO-252 | Provides compact form factor and good heat dissipation performance|
| **Channel type** | Single N-channel | Supports efficient switching and power transmission|
| **Drain-source voltage (V_DS)** | 700V | Suitable for high voltage working environment|
| **Gate-source voltage (V_GS)** | ±30V | Adapts to various control signals|
| **Turn-on voltage (V_th)** | 3.5V | Threshold voltage required for gate turn-on|
| **On-resistance (R_DS(ON))** | 2400mΩ @ V_GS=10V | Typical on-resistance under 10V drive|
| **Maximum drain current (I_D)** | 2A | Supports high current transmission|
| **Technology** | SJ_Multi-EPI | Improves voltage tolerance and switching efficiency|
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| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|-------------------------------|
| **Package** | TO-252 | Provides compact form factor and good heat dissipation performance|
| **Channel type** | Single N-channel | Supports efficient switching and power transmission|
| **Drain-source voltage (V_DS)** | 700V | Suitable for high voltage working environment|
| **Gate-source voltage (V_GS)** | ±30V | Adapts to various control signals|
| **Turn-on voltage (V_th)** | 3.5V | Threshold voltage required for gate turn-on|
| **On-resistance (R_DS(ON))** | 2400mΩ @ V_GS=10V | Typical on-resistance under 10V drive|
| **Maximum drain current (I_D)** | 2A | Supports high current transmission|
| **Technology** | SJ_Multi-EPI | Improves voltage tolerance and switching efficiency|
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Domain and module applications：
3. Application fields and module examples
1. **Power conversion (switching power supply and DC-DC converter)**
- NCE70T2K2K-VB can be used in **switching power supply (SMPS)** for AC-DC and DC-DC conversion applications. With its high voltage and moderate on-resistance, it can effectively reduce energy loss and improve power efficiency.
- This MOSFET is also suitable for **low-power DC-DC converters**, providing reliable current transmission under high voltage conditions.
2. **Motor control**
- In **motor drives** and **variable frequency drives (VFD)**, NCE70T2K2K-VB can be used for the control of small motors, providing efficient switching drive for motors, meeting the needs of a variety of industrial and household appliances.
3. **Renewable Energy (Solar Inverter and Wind Energy Applications)**
- In **Photovoltaic (PV) inverters**, the NCE70T2K2K-VB can operate efficiently in high voltage environments, supporting the stable operation of solar power generation systems.
- This MOSFET can also be used in **Wind Power Generation Systems** to improve power conversion efficiency and achieve continuous and stable energy output.
4. **LED Lighting Systems**
- In **LED drive circuits**, the NCE70T2K2K-VB can be used in high-power LED lighting solutions, providing stable current output and effective dimming functions for commercial and industrial lighting.
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The high voltage tolerance and moderate on-resistance of the NCE70T2K2K-VB make it a reliable choice in the fields of power management, motor control and renewable energy. Its advanced super junction technology ensures high-efficiency performance in a variety of applications, meeting the demand for high efficiency in modern electronic devices.
1. **Power conversion (switching power supply and DC-DC converter)**
- NCE70T2K2K-VB can be used in **switching power supply (SMPS)** for AC-DC and DC-DC conversion applications. With its high voltage and moderate on-resistance, it can effectively reduce energy loss and improve power efficiency.
- This MOSFET is also suitable for **low-power DC-DC converters**, providing reliable current transmission under high voltage conditions.
2. **Motor control**
- In **motor drives** and **variable frequency drives (VFD)**, NCE70T2K2K-VB can be used for the control of small motors, providing efficient switching drive for motors, meeting the needs of a variety of industrial and household appliances.
3. **Renewable Energy (Solar Inverter and Wind Energy Applications)**
- In **Photovoltaic (PV) inverters**, the NCE70T2K2K-VB can operate efficiently in high voltage environments, supporting the stable operation of solar power generation systems.
- This MOSFET can also be used in **Wind Power Generation Systems** to improve power conversion efficiency and achieve continuous and stable energy output.
4. **LED Lighting Systems**
- In **LED drive circuits**, the NCE70T2K2K-VB can be used in high-power LED lighting solutions, providing stable current output and effective dimming functions for commercial and industrial lighting.
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The high voltage tolerance and moderate on-resistance of the NCE70T2K2K-VB make it a reliable choice in the fields of power management, motor control and renewable energy. Its advanced super junction technology ensures high-efficiency performance in a variety of applications, meeting the demand for high efficiency in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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