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NCE70T2K2I-VB Product details
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1. NCE70T2K2I-VB Product Introduction
NCE70T2K2I-VB is a high-performance single-channel N-type power MOSFET in a **TO-251 package**, designed for high-voltage applications. It has a **700V drain-source voltage (VDS)** and a ±30V gate voltage (VGS) to ensure stable operation in high-voltage environments. The device has an on-resistance (RDS(ON)) of **2400mΩ @ VGS = 10V** and a maximum drain current (ID) of **2A**, making it suitable for low-power high-voltage applications. Using **SJ_Multi-EPI** technology, the NCE70T2K2I-VB excels in high-efficiency power conversion, can effectively reduce power consumption and heat dissipation, and is suitable for various high-voltage circuits.
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NCE70T2K2I-VB is a high-performance single-channel N-type power MOSFET in a **TO-251 package**, designed for high-voltage applications. It has a **700V drain-source voltage (VDS)** and a ±30V gate voltage (VGS) to ensure stable operation in high-voltage environments. The device has an on-resistance (RDS(ON)) of **2400mΩ @ VGS = 10V** and a maximum drain current (ID) of **2A**, making it suitable for low-power high-voltage applications. Using **SJ_Multi-EPI** technology, the NCE70T2K2I-VB excels in high-efficiency power conversion, can effectively reduce power consumption and heat dissipation, and is suitable for various high-voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE70T2K2I-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-251 | Suitable for high-density PCB layout|
| **Configuration** | Single-N | Suitable for power switches and control circuits|
| **Drain-Source Voltage (VDS)** | 700V | Reliability guaranteed for high-voltage applications|
| **Gate-Source Voltage (VGS)** | ±30V | Provides a flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | Gate needs to exceed this voltage to turn on|
| **On-Resistance (RDS(ON))** | 2400mΩ @ VGS = 10V | Higher conduction loss, suitable for lower power applications|
| **Drain Current (ID)** | 2A | Maximum supported current|
| **Technology** | SJ_Multi-EPI | Superjunction technology improves power conversion efficiency|
| **Operating Temperature Range** | -55°C ~ +150°C | Wide operating temperature range ensures stable device operation|
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| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-251 | Suitable for high-density PCB layout|
| **Configuration** | Single-N | Suitable for power switches and control circuits|
| **Drain-Source Voltage (VDS)** | 700V | Reliability guaranteed for high-voltage applications|
| **Gate-Source Voltage (VGS)** | ±30V | Provides a flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | Gate needs to exceed this voltage to turn on|
| **On-Resistance (RDS(ON))** | 2400mΩ @ VGS = 10V | Higher conduction loss, suitable for lower power applications|
| **Drain Current (ID)** | 2A | Maximum supported current|
| **Technology** | SJ_Multi-EPI | Superjunction technology improves power conversion efficiency|
| **Operating Temperature Range** | -55°C ~ +150°C | Wide operating temperature range ensures stable device operation|
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Domain and module applications：
3. Applicable fields and application modules of NCE70T2K2I-VB
1. **High-voltage power adapter**
NCE70T2K2I-VB is suitable for **small high-voltage DC-DC converter** and **power adapter**, and can provide reliable high-voltage output in situations where a large amount of current is not required. Its 700V drain-source voltage and moderate on-resistance make it an ideal choice for low-power power solutions.
2. **High-voltage switching circuit**
This MOSFET can be used in **high-voltage switching circuit**, such as switching power supplies and high-voltage control circuits. It can effectively control the direction of current flow, adapt to different load requirements, and ensure efficient and stable operation of the circuit.
3. **Battery management system**
In the **battery management system**, NCE70T2K2I-VB can be used for charge and discharge control, especially in the application of high-voltage batteries, and can provide safe and reliable switching functions. It is suitable for **electric vehicles** and **energy storage systems** to help achieve efficient battery charging and monitoring.
4. **LED Driver**
This MOSFET can be used in **LED drive circuits**, especially high-power LED lighting systems that require high voltage. Although its ID is small, it can be effectively used in small high-voltage LED modules to provide efficient dimming control.
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With its high voltage characteristics and moderate on-resistance, NCE70T2K2I-VB is widely used in many fields such as high-voltage power supplies, switching circuits, battery management, and lighting drivers, making it a reliable choice in these applications. Although its drain current is relatively small, it performs well in specific low-power high-voltage scenarios, ensuring high efficiency and stability of the system.
1. **High-voltage power adapter**
NCE70T2K2I-VB is suitable for **small high-voltage DC-DC converter** and **power adapter**, and can provide reliable high-voltage output in situations where a large amount of current is not required. Its 700V drain-source voltage and moderate on-resistance make it an ideal choice for low-power power solutions.
2. **High-voltage switching circuit**
This MOSFET can be used in **high-voltage switching circuit**, such as switching power supplies and high-voltage control circuits. It can effectively control the direction of current flow, adapt to different load requirements, and ensure efficient and stable operation of the circuit.
3. **Battery management system**
In the **battery management system**, NCE70T2K2I-VB can be used for charge and discharge control, especially in the application of high-voltage batteries, and can provide safe and reliable switching functions. It is suitable for **electric vehicles** and **energy storage systems** to help achieve efficient battery charging and monitoring.
4. **LED Driver**
This MOSFET can be used in **LED drive circuits**, especially high-power LED lighting systems that require high voltage. Although its ID is small, it can be effectively used in small high-voltage LED modules to provide efficient dimming control.
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With its high voltage characteristics and moderate on-resistance, NCE70T2K2I-VB is widely used in many fields such as high-voltage power supplies, switching circuits, battery management, and lighting drivers, making it a reliable choice in these applications. Although its drain current is relatively small, it performs well in specific low-power high-voltage scenarios, ensuring high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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