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NCE70T1K2K-VB Product details

Product introduction:



NCE70T1K2K-VB is a high voltage single N-channel MOSFET in a TO252 package designed for high voltage power applications. Its drain-source voltage (VDS) can reach 700V, making it suitable for high voltage power supplies and power conversion systems. The device has a gate-source voltage (VGS) of ±30V, providing a safe operating range to ensure the reliability and stability of the device. The turn-on voltage (Vth) of NCE70T1K2K-VB is 3.5V, which is convenient for compatibility with common drive circuits. At VGS=4.5V, the on-resistance (RDS(ON)) is 1080mΩ, while at VGS=10V it is 1350mΩ, indicating that it has relatively low conduction losses in high voltage working environments. The maximum drain current (ID) is 6A, and the use of Plannar technology ensures the high efficiency and reliability of the device in various applications.

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## 2. NCE70T1K2K-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 700V 3.5V 6A 1350mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 700V 3.5V 6A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 700V 3.5V 6A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N


| **Parameter** | **Specification** | **Description** |
|-------------------------|--------------------------------|------------------------------|
| **Package** | TO252 | Suitable for medium and low power applications|
| **Channel type** | Single N-channel | Suitable for high-efficiency switch design|
| **Drain-source voltage (VDS)** | 700V | High voltage application|
| **Gate-source voltage (VGS)** | ±30V | Provide high withstand voltage design|
| **Turning point voltage (Vth)** | 3.5V | Convenient for low voltage drive|
| **On-resistance (RDS(ON))** | 1080mΩ @ VGS=4.5V | Suitable for medium and high voltage applications|
| | 1350mΩ @ VGS=10V | |
| **Maximum drain current (ID)** | 6A | Meet low to medium current load requirements|
| **Working Technology** | Plannar | High performance design|
| **Operating temperature range** | -55°C to +150°C | Suitable for wide temperature range applications|

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## III.

Domain and module applications:



1. **Power Management and Conversion**
The NCE70T1K2K-VB is suitable for high-voltage switch mode power supplies (SMPS) and DC-DC converters. Its 700V drain-source voltage enables it to work effectively at high voltage inputs, helping to achieve efficient power conversion and energy management.

2. **Industrial Control Systems**
This MOSFET can be used as a load switch or relay replacement in industrial automation and control equipment. Its high performance and stability make it an ideal choice for industrial motor control and various automation equipment.

3. **Electric Vehicle Charging System**
The NCE70T1K2K-VB can also be used in electric vehicle charging equipment. It can handle high voltage and current, provide a safe and efficient charging solution for the battery, and ensure the reliability and safety of the electric vehicle charging process.

4. **Renewable Energy Inverter**
In solar and wind inverters, this device can efficiently convert DC to AC, adapt to the needs of high-voltage power generation systems, and improve energy conversion efficiency.

5. **Lighting Control and Dimming System**
NCE70T1K2K-VB performs well in high-voltage LED lighting applications, can effectively drive LED components, realize intelligent lighting and automatic control, and meet the requirements of modern lighting systems for high efficiency and reliability.

With its high voltage capability, low conduction loss and good thermal performance, NCE70T1K2K-VB is suitable for a variety of power electronics applications and can meet the stringent requirements of modern electronic equipment for efficiency and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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