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NCE70T1K2I-VB Product details
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1. NCE70T1K2I-VB Product Introduction
NCE70T1K2I-VB is a high-voltage single N-channel power MOSFET in a TO-251 package, suitable for applications requiring high voltage blocking capability. Its withstand voltage (V\(_{DS}\)) is **700V**, providing excellent anti-breakthrough performance. The gate voltage (V\(_{GS}\)) range is ±30V, and the threshold voltage is **3.5V**, ensuring good switching response. The **R\(_{DS(ON)}\)** of NCE70T1K2I-VB is **1000mΩ** at V\(_{GS}\) = 10V, supporting a maximum **5A continuous drain current**. This product adopts **super junction multi-epitaxial technology (SJ Multi-EPI)**, which has significant advantages in improving circuit efficiency and reducing losses, and is widely used in various high-voltage switches and power electronic systems.
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NCE70T1K2I-VB is a high-voltage single N-channel power MOSFET in a TO-251 package, suitable for applications requiring high voltage blocking capability. Its withstand voltage (V\(_{DS}\)) is **700V**, providing excellent anti-breakthrough performance. The gate voltage (V\(_{GS}\)) range is ±30V, and the threshold voltage is **3.5V**, ensuring good switching response. The **R\(_{DS(ON)}\)** of NCE70T1K2I-VB is **1000mΩ** at V\(_{GS}\) = 10V, supporting a maximum **5A continuous drain current**. This product adopts **super junction multi-epitaxial technology (SJ Multi-EPI)**, which has significant advantages in improving circuit efficiency and reducing losses, and is widely used in various high-voltage switches and power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE70T1K2I-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-251 | Compact package with good heat dissipation|
| **Channel Type** | Single N-channel | Enhancement-mode MOSFET for high-voltage applications|
| **V\(_{DS}\)** | 700V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±30V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 3.5V | Gate Turn-On Threshold Voltage|
| **R\(_{DS(ON)}\)** | 1000mΩ (V\(_{GS}\) = 10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 5A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction multi-epitaxial process for improved power efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature support|
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| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-251 | Compact package with good heat dissipation|
| **Channel Type** | Single N-channel | Enhancement-mode MOSFET for high-voltage applications|
| **V\(_{DS}\)** | 700V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±30V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 3.5V | Gate Turn-On Threshold Voltage|
| **R\(_{DS(ON)}\)** | 1000mΩ (V\(_{GS}\) = 10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 5A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction multi-epitaxial process for improved power efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature support|
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Domain and module applications：
3. Applicable fields and module application examples
1. **High-voltage switching power supply (SMPS)**
NCE70T1K2I-VB is suitable for **switching mode power supply (SMPS)** that requires high voltage, such as industrial power supply systems. Its 700V withstand voltage ensures stable operation in high voltage environments, suitable for use in circuit design, reducing energy loss and improving efficiency.
2. **Photovoltaic and wind power inverters**
This MOSFET can be used as a power switching element in **photovoltaic power generation systems** and **wind power conversion systems** for the conversion and transmission of electrical energy. Superjunction multi-epitaxial technology supports low loss and high efficiency in high-voltage applications.
3. **Motor drive system**
In **motor drives** and variable frequency controllers, NCE70T1K2I-VB can be used as a key switching element in the inverter, suitable for AC motors that require precise control, especially in applications with high voltage and medium current requirements.
4. **Power Factor Correction (PFC)** Module
Due to its low on-resistance and high withstand voltage characteristics, this MOSFET is suitable for **PFC circuit** to improve the power factor and reduce power loss to meet strict power quality requirements.
5. **Smart Meter and Industrial Control System**
In smart grid and industrial control systems, NCE70T1K2I-VB can be used to achieve efficient power switching and management, ensuring high reliability and long-term stable operation of the system.
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NCE70T1K2I-VB is a MOSFET designed for high-voltage applications, showing excellent performance in many fields such as high-voltage conversion, motor control, energy inverter, etc. Its high withstand voltage and multiple epitaxial technology enable it to operate stably in a variety of harsh environments and improve the overall energy efficiency of the system.
1. **High-voltage switching power supply (SMPS)**
NCE70T1K2I-VB is suitable for **switching mode power supply (SMPS)** that requires high voltage, such as industrial power supply systems. Its 700V withstand voltage ensures stable operation in high voltage environments, suitable for use in circuit design, reducing energy loss and improving efficiency.
2. **Photovoltaic and wind power inverters**
This MOSFET can be used as a power switching element in **photovoltaic power generation systems** and **wind power conversion systems** for the conversion and transmission of electrical energy. Superjunction multi-epitaxial technology supports low loss and high efficiency in high-voltage applications.
3. **Motor drive system**
In **motor drives** and variable frequency controllers, NCE70T1K2I-VB can be used as a key switching element in the inverter, suitable for AC motors that require precise control, especially in applications with high voltage and medium current requirements.
4. **Power Factor Correction (PFC)** Module
Due to its low on-resistance and high withstand voltage characteristics, this MOSFET is suitable for **PFC circuit** to improve the power factor and reduce power loss to meet strict power quality requirements.
5. **Smart Meter and Industrial Control System**
In smart grid and industrial control systems, NCE70T1K2I-VB can be used to achieve efficient power switching and management, ensuring high reliability and long-term stable operation of the system.
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NCE70T1K2I-VB is a MOSFET designed for high-voltage applications, showing excellent performance in many fields such as high-voltage conversion, motor control, energy inverter, etc. Its high withstand voltage and multiple epitaxial technology enable it to operate stably in a variety of harsh environments and improve the overall energy efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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