NCE70T180D-VB Product details
Product introduction:
NCE70T180D-VB is a single-channel N-type power MOSFET in a **TO-263 package**, designed for high-voltage, high-efficiency applications. Its **700V drain-source voltage (VDS)** and ±30V gate voltage (VGS) range enable it to operate stably in high-voltage circuits. The device has an on-resistance (RDS(ON)) of **210mΩ @ VGS = 10V**, and a maximum drain current (ID) of **20A**, providing excellent current carrying capacity. With **SJ_Multi-EPI (super junction multilayer epitaxy) technology**, NCE70T180D-VB performs well in high-frequency and high-efficiency power conversion scenarios, effectively reducing power loss and thermal management burdens.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-263 | Low-profile surface-mount package, suitable for high-density PCB design|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switching and control circuits|
| **Drain-Source Voltage (VDS)** | 700V | Able to withstand high voltage, suitable for high-voltage power conversion systems|
| **Gate-Source Voltage (VGS)** | ±30V | Provides a flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | Gate needs to exceed this voltage to turn on|
| **On-Resistance (RDS(ON))** | 210mΩ @ VGS = 10V | Low on-resistance reduces power loss|
| **Drain Current (ID)** | 20A | Supports high current loads|
| **Technology** | SJ_Multi-EPI | Super junction technology improves efficiency and reduces heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Adapts to extreme environments and ensures long-term stable operation of the device|
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Domain and module applications:
1. **High-voltage power converter**
NCE70T180D-VB is commonly used in **DC-DC converter** and **AC-DC power adapter**, especially in industrial power supply. Its 700V VDS makes it suitable for high-voltage power grid and backup power system, effectively improving power conversion efficiency and reducing heat generation.
2. **Industrial motor drive and automation control**
This MOSFET can be used to control high-voltage motor loads in **motor drive systems**, such as industrial automation equipment, air conditioning compressors and power tools. Its low on-resistance and 20A drain current ensure motor operation efficiency and control accuracy.
3. **New Energy and Energy Storage Systems**
In **PV inverters** and **energy storage systems**, the NCE70T180D-VB is suitable for switching control of high-voltage DC circuits, helping to improve the conversion efficiency of new energy systems. Its high current carrying capacity ensures fast response during charging and discharging.
4. **High-voltage LED drive and lighting systems**
This device is suitable for **LED lighting drive circuits**, especially in outdoor and industrial lighting that require long-term and efficient operation. Low on-resistance reduces power loss and supports complex PWM dimming control.
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NCE70T180D-VB is widely used in high-voltage power systems, industrial control, new energy, and lighting modules with its high voltage, high current carrying capacity, and excellent switching performance. In these application scenarios, it can not only improve system efficiency, but also reduce costs through good thermal management, making it an ideal choice for various high-voltage applications.
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