NCE70R900I-VB Product details
Product introduction:
NCE70R900I-VB is a high-voltage **single N-channel MOSFET** in a **TO-251** package, designed to provide a stable and efficient solution for high-voltage applications. Its drain-source voltage (VDS) is as high as **700V**, which can operate safely in high-voltage environments. It supports **±30V gate-source voltage (VGS)** and has a **3.5V threshold voltage (Vth)**, ensuring that the device can be turned on reliably when needed. The design of **1000mΩ@VGS=10V** on-resistance and **5A** maximum drain current balances current handling capability and conduction loss, making it suitable for medium-load applications under high voltage.
This product adopts **SJ_Multi-EPI (super junction multi-epitaxial) technology**, which optimizes the relationship between voltage resistance and conduction loss, and is very suitable for use in scenarios such as power conversion, industrial control and energy management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| **Parameter** | **Description and value** |
|---------------------------|------------------------------------------|
| **Model** | NCE70R900I-VB |
| **Package** | TO-251 |
| **Channel type** | Single-N-Channel |
| **Maximum drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 1000mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology) |
| **Operating temperature range** | -55°C to +150°C |
| **Power consumption (Ptot)** | 45W |
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Domain and module applications:
1. **LED Drivers**
NCE70R900I-VB is suitable for high-voltage LED drivers, providing stable current control under constant high voltage conditions to ensure efficient operation of LED lighting systems.
2. **Smart Meters**
In the power management module of smart meters, this MOSFET helps control high-voltage input signals and optimize the energy efficiency and stability of the equipment.
3. **Small Motor Drives**
Suitable for small-power motor drive systems such as fans and small pumps, the high-voltage capability of NCE70R900I-VB enables it to handle voltage spikes and ensure reliable operation in these systems.
4. **Power Modules in Home Appliances**
This device is suitable for power modules in home appliances such as microwave ovens, air conditioners and washing machines, providing high-voltage power conversion and energy control.
5. **Solar Power Optimizers**
In solar energy systems, NCE70R900I-VB can be used to optimize the voltage and energy output of photovoltaic modules and improve overall power generation efficiency.
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The high voltage resistance, high efficiency and stability of NCE70R900I-VB make it an ideal choice for high-voltage drive and energy control applications, and is widely used in industrial control, energy management and consumer electronics.
Technical support:
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