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NCE70R900D-VB Product details
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1. NCE70R900D-VB Product Introduction
NCE70R900D-VB is a single N-channel MOSFET in a **TO263 package**, designed for high-voltage applications, with a **700V drain-source voltage (VDS)**, which can stably cope with high-voltage environments. The device supports **±30V gate-source voltage (VGS)** and has a **3.5V threshold voltage (Vth)**, which enables it to turn on and off quickly at a lower gate drive voltage. The **on-resistance RDS(ON)** of the MOSFET is **750mΩ** (under VGS=10V conditions), and the maximum **drain current (ID)** is **7A**. NCE70R900D-VB adopts **SJ_Multi-EPI technology**, and through multi-junction design, it reduces losses while ensuring switching performance, providing an ideal solution for high-frequency and high-efficiency power conversion applications.
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NCE70R900D-VB is a single N-channel MOSFET in a **TO263 package**, designed for high-voltage applications, with a **700V drain-source voltage (VDS)**, which can stably cope with high-voltage environments. The device supports **±30V gate-source voltage (VGS)** and has a **3.5V threshold voltage (Vth)**, which enables it to turn on and off quickly at a lower gate drive voltage. The **on-resistance RDS(ON)** of the MOSFET is **750mΩ** (under VGS=10V conditions), and the maximum **drain current (ID)** is **7A**. NCE70R900D-VB adopts **SJ_Multi-EPI technology**, and through multi-junction design, it reduces losses while ensuring switching performance, providing an ideal solution for high-frequency and high-efficiency power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NCE70R900D-VB Detailed parameter description
| **Parameter** | **Description** | **Value** |
|--------------------|--------------------------|------------------------|
| **Package type** | TO263 | High power surface mount package|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel switch control|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 700V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±30V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3.5V |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 10V| 750mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 7A |
| **Technology type** | SJ_Multi-EPI Technology | High efficiency and low loss under high voltage |
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature adaptability |
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| **Parameter** | **Description** | **Value** |
|--------------------|--------------------------|------------------------|
| **Package type** | TO263 | High power surface mount package|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel switch control|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 700V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±30V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3.5V |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 10V| 750mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 7A |
| **Technology type** | SJ_Multi-EPI Technology | High efficiency and low loss under high voltage |
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature adaptability |
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Domain and module applications：
III. Application fields and typical module examples
1. **High-voltage power conversion system**
- NCE70R900D-VB is suitable for high-voltage AC-DC or DC-DC conversion circuits, such as solar inverters, industrial power supplies and UPS systems. Its **700V withstand voltage** capability ensures stable operation under high voltage conditions.
2. **LED lighting driver**
- In high-voltage LED drive circuits, this MOSFET can be used as the main switching element to provide reliable power transmission. Its low conduction loss helps reduce power consumption and improve the efficiency and stability of lighting systems.
3. **Smart meters and grid equipment**
- The device can be used in smart meters and distributed power management modules to support efficient conversion and control of electrical energy while adapting to voltage stress caused by grid fluctuations.
4. **Charging pile and electric vehicle power management**
- NCE70R900D-VB can provide reliable switch control in charging piles and on-board power modules, ensure current management in high-voltage environments, and improve system safety and energy efficiency.
5. **Industrial automation and control systems**
- In the power management module of industrial equipment, this MOSFET can be used for power distribution and drive circuits to provide efficient and stable power conversion capabilities for automation systems.
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With its high withstand voltage, high reliability and support for multi-junction technology, NCE70R900D-VB is widely used in **power conversion, LED driving, smart grid and industrial control** and other fields. Its TO263 package facilitates heat dissipation and adapts to high-power applications. It is an indispensable component in high-frequency and high-efficiency power systems.
1. **High-voltage power conversion system**
- NCE70R900D-VB is suitable for high-voltage AC-DC or DC-DC conversion circuits, such as solar inverters, industrial power supplies and UPS systems. Its **700V withstand voltage** capability ensures stable operation under high voltage conditions.
2. **LED lighting driver**
- In high-voltage LED drive circuits, this MOSFET can be used as the main switching element to provide reliable power transmission. Its low conduction loss helps reduce power consumption and improve the efficiency and stability of lighting systems.
3. **Smart meters and grid equipment**
- The device can be used in smart meters and distributed power management modules to support efficient conversion and control of electrical energy while adapting to voltage stress caused by grid fluctuations.
4. **Charging pile and electric vehicle power management**
- NCE70R900D-VB can provide reliable switch control in charging piles and on-board power modules, ensure current management in high-voltage environments, and improve system safety and energy efficiency.
5. **Industrial automation and control systems**
- In the power management module of industrial equipment, this MOSFET can be used for power distribution and drive circuits to provide efficient and stable power conversion capabilities for automation systems.
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With its high withstand voltage, high reliability and support for multi-junction technology, NCE70R900D-VB is widely used in **power conversion, LED driving, smart grid and industrial control** and other fields. Its TO263 package facilitates heat dissipation and adapts to high-power applications. It is an indispensable component in high-frequency and high-efficiency power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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