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NCE70R540I-VB Product details
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1. NCE70R540I-VB Product Introduction
NCE70R540I-VB is a high-voltage single N-channel power MOSFET in a TO-251 package, designed for high performance and high reliability. The MOSFET has a withstand voltage (V\(_{DS}\)) of up to 700V, suitable for high voltage applications. Its gate voltage (V\(_{GS}\)) range is ±30V, and it has a threshold voltage (V\(_{th}\)) of 3.5V, ensuring fast switching response. The NCE70R540I-VB has an R\(_{DS(ON)}\) of 600mΩ at V\(_{GS}\) = 10V, supporting a maximum continuous drain current of 10A. Using **Super-Junction Multi-EPI)** technology, this MOSFET performs well in high-voltage and high-efficiency power applications and is widely used in power electronic modules.
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NCE70R540I-VB is a high-voltage single N-channel power MOSFET in a TO-251 package, designed for high performance and high reliability. The MOSFET has a withstand voltage (V\(_{DS}\)) of up to 700V, suitable for high voltage applications. Its gate voltage (V\(_{GS}\)) range is ±30V, and it has a threshold voltage (V\(_{th}\)) of 3.5V, ensuring fast switching response. The NCE70R540I-VB has an R\(_{DS(ON)}\) of 600mΩ at V\(_{GS}\) = 10V, supporting a maximum continuous drain current of 10A. Using **Super-Junction Multi-EPI)** technology, this MOSFET performs well in high-voltage and high-efficiency power applications and is widely used in power electronic modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE70R540I-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-251 | Compact package for good thermal management|
| **Channel Type** | Single N-channel | Enhancement-mode MOSFET for high-voltage switching applications|
| **V\(_{DS}\)** | 700V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±30V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 3.5V | Minimum Gate Turn-On Voltage|
| **R\(_{DS(ON)}\)** | 600mΩ (V\(_{GS}\)=10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 10A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction technology for improved efficiency and reduced losses|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range|
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| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-251 | Compact package for good thermal management|
| **Channel Type** | Single N-channel | Enhancement-mode MOSFET for high-voltage switching applications|
| **V\(_{DS}\)** | 700V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±30V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 3.5V | Minimum Gate Turn-On Voltage|
| **R\(_{DS(ON)}\)** | 600mΩ (V\(_{GS}\)=10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 10A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction technology for improved efficiency and reduced losses|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range|
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Domain and module applications：
III. Applicable fields and module application examples
1. **Power conversion module**
NCE70R540I-VB is particularly suitable for **high-voltage switching power supplies (SMPS)** and **DC-DC converters**, such as power supply systems and telecommunication equipment. Due to its high withstand voltage and relatively low on-resistance, this MOSFET can effectively improve the efficiency of the power supply and reduce energy loss.
2. **Motor drive and control system**
In **motor drives**, NCE70R540I-VB can be used as a key switching element of the inverter, suitable for high-power motor control and variable frequency drives. Its high current carrying capacity enables it to reliably control the starting and operation of AC motors.
3. **New energy and photovoltaic applications**
NCE70R540I-VB can be widely used in **photovoltaic inverters** and **wind energy conversion systems** as a power conversion module to ensure stable operation under high voltage conditions and improve energy conversion efficiency.
4. **EV Charging System**
In **EV charging piles** and charging systems, the NCE70R540I-VB acts as a power switch that can handle high voltage and high current charging processes, ensuring a fast and safe charging experience.
5. **Power Electronics Applications**
In addition, the NCE70R540I-VB is also suitable for **high-power LED drivers** and **power factor correction (PFC)** modules, which can effectively manage power conversion in demanding power electronics environments.
As a high-efficiency and high-reliability MOSFET, the NCE70R540I-VB has demonstrated excellent performance in multiple fields and applications, meeting the needs of high voltage and high efficiency.
1. **Power conversion module**
NCE70R540I-VB is particularly suitable for **high-voltage switching power supplies (SMPS)** and **DC-DC converters**, such as power supply systems and telecommunication equipment. Due to its high withstand voltage and relatively low on-resistance, this MOSFET can effectively improve the efficiency of the power supply and reduce energy loss.
2. **Motor drive and control system**
In **motor drives**, NCE70R540I-VB can be used as a key switching element of the inverter, suitable for high-power motor control and variable frequency drives. Its high current carrying capacity enables it to reliably control the starting and operation of AC motors.
3. **New energy and photovoltaic applications**
NCE70R540I-VB can be widely used in **photovoltaic inverters** and **wind energy conversion systems** as a power conversion module to ensure stable operation under high voltage conditions and improve energy conversion efficiency.
4. **EV Charging System**
In **EV charging piles** and charging systems, the NCE70R540I-VB acts as a power switch that can handle high voltage and high current charging processes, ensuring a fast and safe charging experience.
5. **Power Electronics Applications**
In addition, the NCE70R540I-VB is also suitable for **high-power LED drivers** and **power factor correction (PFC)** modules, which can effectively manage power conversion in demanding power electronics environments.
As a high-efficiency and high-reliability MOSFET, the NCE70R540I-VB has demonstrated excellent performance in multiple fields and applications, meeting the needs of high voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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